GB648186A - Improvements relating to germanium rectifiers - Google Patents

Improvements relating to germanium rectifiers

Info

Publication number
GB648186A
GB648186A GB32069/48A GB3206948A GB648186A GB 648186 A GB648186 A GB 648186A GB 32069/48 A GB32069/48 A GB 32069/48A GB 3206948 A GB3206948 A GB 3206948A GB 648186 A GB648186 A GB 648186A
Authority
GB
United Kingdom
Prior art keywords
heating
germanium
improvements relating
time
atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB32069/48A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KENNETH ARTHUR GARROD
Siemens Mobility Ltd
Original Assignee
KENNETH ARTHUR GARROD
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KENNETH ARTHUR GARROD, Westinghouse Brake and Signal Co Ltd filed Critical KENNETH ARTHUR GARROD
Publication of GB648186A publication Critical patent/GB648186A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Abstract

A process for the manufacture of a germanium crystal rectifier involves the heating of "pure" germanium in an atmosphere of ammonia with measures to prevent the acidization of the germanium during heating. The heating may be carried out in an atmosphere substantially free of oxygen, and in which some hydrogen is present, and may comprise the steps of firstly heating for a time at a temperature between 400 DEG C. and 800 DEG C, and then for a time between 800 DEG C. and 1,200 DEG C. Alternatively, the heating may be gradual to a temperature above 800 DEG C. and then maintained thereat for a period, or heating may take place in a vacuum until the germanium is molten, and gaseous ammonia then introduced.
GB32069/48A 1949-10-27 1948-12-10 Improvements relating to germanium rectifiers Expired GB648186A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3206949 1949-10-27

Publications (1)

Publication Number Publication Date
GB648186A true GB648186A (en) 1951-01-03

Family

ID=10332704

Family Applications (1)

Application Number Title Priority Date Filing Date
GB32069/48A Expired GB648186A (en) 1949-10-27 1948-12-10 Improvements relating to germanium rectifiers

Country Status (2)

Country Link
FR (1) FR999749A (en)
GB (1) GB648186A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1288688B (en) * 1955-02-15 1969-02-06 Siemens Ag Diffusion process for doping a surface layer of solid semiconductor bodies for semiconductor components

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1288688B (en) * 1955-02-15 1969-02-06 Siemens Ag Diffusion process for doping a surface layer of solid semiconductor bodies for semiconductor components

Also Published As

Publication number Publication date
FR999749A (en) 1952-02-04

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