GB637736A - Improved method of forming blocking layers for blocking layer cells - Google Patents
Improved method of forming blocking layers for blocking layer cellsInfo
- Publication number
- GB637736A GB637736A GB10007/47A GB1000747A GB637736A GB 637736 A GB637736 A GB 637736A GB 10007/47 A GB10007/47 A GB 10007/47A GB 1000747 A GB1000747 A GB 1000747A GB 637736 A GB637736 A GB 637736A
- Authority
- GB
- United Kingdom
- Prior art keywords
- selenium
- plate
- layer
- cathode
- blocking layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000903 blocking effect Effects 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 8
- 229910052711 selenium Inorganic materials 0.000 abstract 8
- 239000011669 selenium Substances 0.000 abstract 8
- 238000010849 ion bombardment Methods 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 abstract 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 1
- 239000005864 Sulphur Substances 0.000 abstract 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 150000004820 halides Chemical class 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- -1 tin chloride Chemical class 0.000 abstract 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
- H10D48/045—Treatment of the surface of the selenium or tellurium layer after having been made conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02444—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
- H10D48/0431—Application of the selenium or tellurium to the foundation plate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
- H10D48/046—Provision of discrete insulating layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Photoreceptors In Electrophotography (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
- Electrolytic Production Of Metals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL253109X | 1944-08-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB637736A true GB637736A (en) | 1950-05-24 |
Family
ID=19781189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB10007/47A Expired GB637736A (en) | 1944-08-08 | 1947-04-15 | Improved method of forming blocking layers for blocking layer cells |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US2468527A (enrdf_load_stackoverflow) |
| BE (1) | BE467879A (enrdf_load_stackoverflow) |
| CH (1) | CH253109A (enrdf_load_stackoverflow) |
| DE (1) | DE915593C (enrdf_load_stackoverflow) |
| FR (1) | FR942904A (enrdf_load_stackoverflow) |
| GB (1) | GB637736A (enrdf_load_stackoverflow) |
| NL (2) | NL66146C (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE540436A (enrdf_load_stackoverflow) * | 1951-10-29 | |||
| DE1090768B (de) * | 1957-05-11 | 1960-10-13 | Licentia Gmbh | Verfahren zur Herstellung von Selentrockengleichrichtern |
| US2892136A (en) * | 1957-09-09 | 1959-06-23 | Int Rectifier Corp | Rectifier with multiple barrier layers |
| NL275667A (enrdf_load_stackoverflow) * | 1961-04-28 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT153134B (de) * | 1936-06-13 | 1938-04-11 | Aeg | Verfahren zur Herstellung von Trockenplattengleichrichtern. |
| US2221596A (en) * | 1938-01-22 | 1940-11-12 | Fides Gmbh | Method of manufacturing dry rectifiers |
| NL93270C (enrdf_load_stackoverflow) * | 1938-06-07 | |||
| NL57635C (enrdf_load_stackoverflow) * | 1938-09-09 | |||
| DE742762C (de) * | 1939-03-15 | 1943-12-10 | Philips Patentverwaltung | Verfahren zur Herstellung eines Sperrschichtelektrodensystems mit einer Selenelektrode |
-
0
- NL NL118416D patent/NL118416B/xx unknown
- NL NL66146D patent/NL66146C/xx active
- BE BE467879D patent/BE467879A/xx unknown
-
1946
- 1946-04-10 US US661022A patent/US2468527A/en not_active Expired - Lifetime
- 1946-08-30 CH CH253109D patent/CH253109A/de unknown
- 1946-11-18 FR FR942904D patent/FR942904A/fr not_active Expired
-
1947
- 1947-04-15 GB GB10007/47A patent/GB637736A/en not_active Expired
-
1948
- 1948-10-23 DE DEP19306A patent/DE915593C/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US2468527A (en) | 1949-04-26 |
| BE467879A (enrdf_load_stackoverflow) | 1900-01-01 |
| NL118416B (enrdf_load_stackoverflow) | 1900-01-01 |
| DE915593C (de) | 1954-07-26 |
| NL66146C (enrdf_load_stackoverflow) | 1900-01-01 |
| FR942904A (fr) | 1949-02-22 |
| CH253109A (de) | 1948-02-15 |
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