GB637736A - Improved method of forming blocking layers for blocking layer cells - Google Patents

Improved method of forming blocking layers for blocking layer cells

Info

Publication number
GB637736A
GB637736A GB10007/47A GB1000747A GB637736A GB 637736 A GB637736 A GB 637736A GB 10007/47 A GB10007/47 A GB 10007/47A GB 1000747 A GB1000747 A GB 1000747A GB 637736 A GB637736 A GB 637736A
Authority
GB
United Kingdom
Prior art keywords
selenium
plate
layer
cathode
blocking layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB10007/47A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB637736A publication Critical patent/GB637736A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/105—Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02444—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/101—Application of the selenium or tellurium to the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biotechnology (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
  • Physical Vapour Deposition (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

637,736. Dry contact rectifiers. NAAMLOOZE VENNOOTSCHAP PHILIPS' GLOEILAMPENFABRIEKEN. April 15, 1947, No. 10007. Convention date, Aug. 8, 1944. [Class 37] A method of applying a blocking layer 4, 5, e.g. of selenium or sulphur to an electrode for a rectifier, comprises disintegrating the material to be applied as blocking layer by ion bombardment. An aluminium carrier plate 1 is roughened and coated with a layer of carbon 2, and then selenium 3, to which has been added a volatile halide, e.g. tin chloride, is applied to the plate 1. The selenium surface 3 is smoothed by a press, the plate of which is previously coated with a resin-forming liquid, e.g. chinoline. The plate 1 is then heated at about 200‹ C. A layer 4 of a resin-forming liquid, e.g. triethanolamine, is sprayed either before or during the heating on the selenium, after which the plate 1 is placed between two electrodes in a vessel containing air, with the selenium layer 3 facing the cathode which is also of selenium. The pressure in the vessel is reduced to about 100 mm. of Hg and several kilovolts applied across the electrodes, whereby the selenium cathode is subjected to ion bombardment. The cathode disintegrates and selenium 5 is deposited on the plate 1. A low melting-point alloy forms the counter electrode.
GB10007/47A 1944-08-08 1947-04-15 Improved method of forming blocking layers for blocking layer cells Expired GB637736A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL253109X 1944-08-08

Publications (1)

Publication Number Publication Date
GB637736A true GB637736A (en) 1950-05-24

Family

ID=19781189

Family Applications (1)

Application Number Title Priority Date Filing Date
GB10007/47A Expired GB637736A (en) 1944-08-08 1947-04-15 Improved method of forming blocking layers for blocking layer cells

Country Status (7)

Country Link
US (1) US2468527A (en)
BE (1) BE467879A (en)
CH (1) CH253109A (en)
DE (1) DE915593C (en)
FR (1) FR942904A (en)
GB (1) GB637736A (en)
NL (2) NL66146C (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE540436A (en) * 1951-10-29
DE1090768B (en) * 1957-05-11 1960-10-13 Licentia Gmbh Process for the production of selenium dry rectifiers
US2892136A (en) * 1957-09-09 1959-06-23 Int Rectifier Corp Rectifier with multiple barrier layers
NL275667A (en) * 1961-04-28

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT153134B (en) * 1936-06-13 1938-04-11 Aeg Process for the manufacture of dry plate rectifiers.
US2221596A (en) * 1938-01-22 1940-11-12 Fides Gmbh Method of manufacturing dry rectifiers
NL93270C (en) * 1938-06-07
NL95164C (en) * 1938-09-09
DE742762C (en) * 1939-03-15 1943-12-10 Philips Patentverwaltung Method for manufacturing a barrier electrode system with a selenium electrode

Also Published As

Publication number Publication date
US2468527A (en) 1949-04-26
DE915593C (en) 1954-07-26
NL66146C (en) 1900-01-01
NL118416B (en) 1900-01-01
CH253109A (en) 1948-02-15
BE467879A (en) 1900-01-01
FR942904A (en) 1949-02-22

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