GB516137A - Improvements in and relating to the manufacture of electrode systems of unsymmetrical conductivity - Google Patents
Improvements in and relating to the manufacture of electrode systems of unsymmetrical conductivityInfo
- Publication number
- GB516137A GB516137A GB18434/38A GB1843438A GB516137A GB 516137 A GB516137 A GB 516137A GB 18434/38 A GB18434/38 A GB 18434/38A GB 1843438 A GB1843438 A GB 1843438A GB 516137 A GB516137 A GB 516137A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- metal
- carbon
- selenium
- molybdenum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 7
- 239000002184 metal Substances 0.000 abstract 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 5
- 229910052799 carbon Inorganic materials 0.000 abstract 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 4
- 229910052750 molybdenum Inorganic materials 0.000 abstract 4
- 239000011733 molybdenum Substances 0.000 abstract 4
- 239000011669 selenium Substances 0.000 abstract 4
- 229910052711 selenium Inorganic materials 0.000 abstract 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- 229910052793 cadmium Inorganic materials 0.000 abstract 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052759 nickel Inorganic materials 0.000 abstract 2
- 239000000843 powder Substances 0.000 abstract 2
- 229910052721 tungsten Inorganic materials 0.000 abstract 2
- 239000010937 tungsten Substances 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 abstract 1
- 239000004793 Polystyrene Substances 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 239000004110 Zinc silicate Substances 0.000 abstract 1
- 239000005083 Zinc sulfide Substances 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000007689 inspection Methods 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 abstract 1
- 229920002223 polystyrene Polymers 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 238000005507 spraying Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000000725 suspension Substances 0.000 abstract 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 abstract 1
- 229910001928 zirconium oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/08—Preparation of the foundation plate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
- C23C24/10—Coating starting from inorganic powder by application of heat or pressure and heat with intermediate formation of a liquid phase in the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Coating By Spraying Or Casting (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Photovoltaic Devices (AREA)
Abstract
516,137. Coating metals ; asymmetricallyconducting resistances ; light-sensitive cells. NAAMLOOZE VENNOOTSCHAP PHILIPS' GLOEILAMPENFABRIEKEN. June 21, 1938, No. 18434. Convention date, June 24, 1937. [Class 82 (ii)] [Also in Groups XVI, XXXVI and XL] In the manufacture of an electrode system having unsymmetrical conductivity, a continuous pulverulent layer is applied to a metal carrier by first applying to the carrier a thin layer of a metal, having a lower melting point than the carrier metal and the pulverulent material, then applying the pulverulent material, and heating the aggregate until only the metal intermediate layer is caused to melt. The semi-conductive layer of the electrode system may be formed by, or applied as a coating to, the pulverulent layer, which may comprise a metal powder or carbon. For rectifiers, high frequency detectors or photoelectric cells with selenium electrodes, an aluminium carrier may be roughened, as by hydrochloric acid, a cadmium film applied thereto, dry carbon or a carbon suspension applied to the cadmium and the whole heated to about 500‹C., the selenium layer being then applied to the carbon in a liquid state and spread to a thickness of about .01 mm. ; after annealing of the selenium, a blocking layer, such as polystyrene, is applied, to which an electrode of good conductivity, such as Woods' metal, is then applied. Substances may be added to the selenium to reduce its specific resistance. The Specification as open to inspection under Sect. 91 describes also the application of the process to the construction of (1) transmitting valves with anodes of tungsten, molybdenum &c., coated with nickel on which zirconium oxide is applied by spraying, (2) cathode ray tubes in which a fluorescent powder formed of zinc sulphide or silicate &c., is applied to a silver layer on a base of tungsten or molybdenum, (3) thermionic valves and other electrodes in which an iron anode is coated with copper to which black molybdenum or tungsten powder is applied, and (4) anodes for gas discharge tubes in which carbon is applied to a nickel layer on a core of molybdenum &c. This subject-matter does not appear in the Specification as accepted.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEN40875A DE763103C (en) | 1937-06-25 | 1937-06-25 | Process for applying a coherent, powder-like layer to a metal support in a barrier electrode system and barrier electrode system (rectifier, photocell) produced according to this process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB516137A true GB516137A (en) | 1939-12-22 |
Family
ID=25760433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB18434/38A Expired GB516137A (en) | 1937-06-25 | 1938-06-21 | Improvements in and relating to the manufacture of electrode systems of unsymmetrical conductivity |
Country Status (4)
| Country | Link |
|---|---|
| CH (1) | CH208834A (en) |
| DE (1) | DE763103C (en) |
| GB (1) | GB516137A (en) |
| NL (1) | NL53994C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2462917A (en) * | 1945-05-12 | 1949-03-01 | Standard Telephones Cables Ltd | Method of manufacturing rectifier elements |
| US2462906A (en) * | 1943-05-01 | 1949-03-01 | Standard Telephones Cables Ltd | Manufacture of metal contact rectifiers |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE295103C (en) * | ||||
| DE534137C (en) * | 1929-02-27 | 1931-09-25 | Siemens Schuckertwerke Akt Ges | Process for the production of a good electrically conductive and mechanically strong connection between a metal oxide rectifier provided with a metal coating on the oxide layer and a conductor which supplies power to the metal oxide layer |
-
0
- NL NL53994D patent/NL53994C/xx active
-
1937
- 1937-06-25 DE DEN40875A patent/DE763103C/en not_active Expired
-
1938
- 1938-06-21 GB GB18434/38A patent/GB516137A/en not_active Expired
- 1938-06-22 CH CH208834D patent/CH208834A/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2462906A (en) * | 1943-05-01 | 1949-03-01 | Standard Telephones Cables Ltd | Manufacture of metal contact rectifiers |
| US2462917A (en) * | 1945-05-12 | 1949-03-01 | Standard Telephones Cables Ltd | Method of manufacturing rectifier elements |
Also Published As
| Publication number | Publication date |
|---|---|
| NL53994C (en) | 1900-01-01 |
| CH208834A (en) | 1940-02-29 |
| DE763103C (en) | 1944-12-28 |
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