GB606763A - Improvements in or relating to selenium rectifiers - Google Patents

Improvements in or relating to selenium rectifiers

Info

Publication number
GB606763A
GB606763A GB1758/46A GB175846A GB606763A GB 606763 A GB606763 A GB 606763A GB 1758/46 A GB1758/46 A GB 1758/46A GB 175846 A GB175846 A GB 175846A GB 606763 A GB606763 A GB 606763A
Authority
GB
United Kingdom
Prior art keywords
plate
block
rectifier
temperature
contact member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1758/46A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB606763A publication Critical patent/GB606763A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/14Treatment of the complete device, e.g. by electroforming to form a barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Furnace Details (AREA)
  • Resistance Heating (AREA)

Abstract

606,763. Asymmetrically-conducting resistances. NAAMLOOZE VENNOOTSCHAP PHILIPS' GLOEILAMPENFABRIEKEN. Jan. 18, 1946, No. 1758. Convention date, May 7, 1941. [Class 37] The leakage current in selenium rectifiers is reduced by passing current in the blocking direction through the rectifier whilst the latter has a temperature exceeding the normal operating temperature. The required temperature may be obtained by a furnace, insulating bath, or as preferred, heating by contact with an externally heated supporting plate. Suitable apparatus consists of a rectifier plate 1 and a block 2 of high thermal capacity, maintained at the required temperature by heating element 3. Contact member 4 consisting of two parallel metal plates between which are located resilient contacts 5 to ensure satisfactory electrical contact over the whole rectifier plate is suspended from a supporting plate 6, the latter controlled by lever 7 supported by column 8. Frame 12 is resiliently suspended from plate 6 and holds plate 1 on to block 2. Contact member 4, contacts 5 and block 2 are mutually insulated.
GB1758/46A 1941-05-07 1946-01-18 Improvements in or relating to selenium rectifiers Expired GB606763A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL606763X 1941-05-07

Publications (1)

Publication Number Publication Date
GB606763A true GB606763A (en) 1948-08-19

Family

ID=19787970

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1758/46A Expired GB606763A (en) 1941-05-07 1946-01-18 Improvements in or relating to selenium rectifiers

Country Status (5)

Country Link
US (1) US2464066A (en)
BE (1) BE445491A (en)
FR (1) FR881786A (en)
GB (1) GB606763A (en)
NL (1) NL215047A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2915687A (en) * 1953-12-01 1959-12-01 Itt Electroforming of semiconductive cells

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2752542A (en) * 1950-09-23 1956-06-26 Siemens Ag Dry-plate rectifier
US2725317A (en) * 1952-04-24 1955-11-29 Bell Telephone Labor Inc Method of fabricating and heat treating semiconductors
US2874448A (en) * 1953-02-13 1959-02-24 William F Haldeman Method for stabilizing semi-conductor rectifiers
US2817607A (en) * 1953-08-24 1957-12-24 Rca Corp Method of making semi-conductor bodies

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1935383A (en) * 1931-01-22 1933-11-14 Rca Corp Rectifier element
US2261725A (en) * 1938-05-18 1941-11-04 Westinghouse Electric & Mfg Co Selenium rectifier
NL56589C (en) * 1938-06-07
US2237802A (en) * 1938-06-14 1941-04-08 Gen Electric Method of treating dry plate elements
GB523216A (en) * 1938-12-28 1940-07-09 Westinghouse Brake & Signal Improvements relating to the manufacture of alternating current rectifiers
NL96218C (en) * 1939-01-11
US2362228A (en) * 1941-06-12 1944-11-07 Bell Telephone Labor Inc Method of forming contacts on metal oxide-metal rectifiers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2915687A (en) * 1953-12-01 1959-12-01 Itt Electroforming of semiconductive cells

Also Published As

Publication number Publication date
NL215047A (en)
US2464066A (en) 1949-03-08
BE445491A (en)
FR881786A (en) 1943-05-07

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