GB606763A - Improvements in or relating to selenium rectifiers - Google Patents
Improvements in or relating to selenium rectifiersInfo
- Publication number
- GB606763A GB606763A GB1758/46A GB175846A GB606763A GB 606763 A GB606763 A GB 606763A GB 1758/46 A GB1758/46 A GB 1758/46A GB 175846 A GB175846 A GB 175846A GB 606763 A GB606763 A GB 606763A
- Authority
- GB
- United Kingdom
- Prior art keywords
- plate
- block
- rectifier
- temperature
- contact member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052711 selenium Inorganic materials 0.000 title abstract 2
- 239000011669 selenium Substances 0.000 title abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/14—Treatment of the complete device, e.g. by electroforming to form a barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Furnace Details (AREA)
- Resistance Heating (AREA)
Abstract
606,763. Asymmetrically-conducting resistances. NAAMLOOZE VENNOOTSCHAP PHILIPS' GLOEILAMPENFABRIEKEN. Jan. 18, 1946, No. 1758. Convention date, May 7, 1941. [Class 37] The leakage current in selenium rectifiers is reduced by passing current in the blocking direction through the rectifier whilst the latter has a temperature exceeding the normal operating temperature. The required temperature may be obtained by a furnace, insulating bath, or as preferred, heating by contact with an externally heated supporting plate. Suitable apparatus consists of a rectifier plate 1 and a block 2 of high thermal capacity, maintained at the required temperature by heating element 3. Contact member 4 consisting of two parallel metal plates between which are located resilient contacts 5 to ensure satisfactory electrical contact over the whole rectifier plate is suspended from a supporting plate 6, the latter controlled by lever 7 supported by column 8. Frame 12 is resiliently suspended from plate 6 and holds plate 1 on to block 2. Contact member 4, contacts 5 and block 2 are mutually insulated.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL606763X | 1941-05-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB606763A true GB606763A (en) | 1948-08-19 |
Family
ID=19787970
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1758/46A Expired GB606763A (en) | 1941-05-07 | 1946-01-18 | Improvements in or relating to selenium rectifiers |
Country Status (5)
Country | Link |
---|---|
US (1) | US2464066A (en) |
BE (1) | BE445491A (en) |
FR (1) | FR881786A (en) |
GB (1) | GB606763A (en) |
NL (1) | NL215047A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2915687A (en) * | 1953-12-01 | 1959-12-01 | Itt | Electroforming of semiconductive cells |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2752542A (en) * | 1950-09-23 | 1956-06-26 | Siemens Ag | Dry-plate rectifier |
US2725317A (en) * | 1952-04-24 | 1955-11-29 | Bell Telephone Labor Inc | Method of fabricating and heat treating semiconductors |
US2874448A (en) * | 1953-02-13 | 1959-02-24 | William F Haldeman | Method for stabilizing semi-conductor rectifiers |
US2817607A (en) * | 1953-08-24 | 1957-12-24 | Rca Corp | Method of making semi-conductor bodies |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1935383A (en) * | 1931-01-22 | 1933-11-14 | Rca Corp | Rectifier element |
US2261725A (en) * | 1938-05-18 | 1941-11-04 | Westinghouse Electric & Mfg Co | Selenium rectifier |
NL56589C (en) * | 1938-06-07 | |||
US2237802A (en) * | 1938-06-14 | 1941-04-08 | Gen Electric | Method of treating dry plate elements |
GB523216A (en) * | 1938-12-28 | 1940-07-09 | Westinghouse Brake & Signal | Improvements relating to the manufacture of alternating current rectifiers |
NL96218C (en) * | 1939-01-11 | |||
US2362228A (en) * | 1941-06-12 | 1944-11-07 | Bell Telephone Labor Inc | Method of forming contacts on metal oxide-metal rectifiers |
-
0
- BE BE445491D patent/BE445491A/xx unknown
- NL NL215047D patent/NL215047A/xx unknown
-
1942
- 1942-05-05 FR FR881786D patent/FR881786A/en not_active Expired
-
1945
- 1945-08-29 US US613326A patent/US2464066A/en not_active Expired - Lifetime
-
1946
- 1946-01-18 GB GB1758/46A patent/GB606763A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2915687A (en) * | 1953-12-01 | 1959-12-01 | Itt | Electroforming of semiconductive cells |
Also Published As
Publication number | Publication date |
---|---|
NL215047A (en) | |
US2464066A (en) | 1949-03-08 |
BE445491A (en) | |
FR881786A (en) | 1943-05-07 |
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