US2261725A - Selenium rectifier - Google Patents
Selenium rectifier Download PDFInfo
- Publication number
- US2261725A US2261725A US278841A US27884139A US2261725A US 2261725 A US2261725 A US 2261725A US 278841 A US278841 A US 278841A US 27884139 A US27884139 A US 27884139A US 2261725 A US2261725 A US 2261725A
- Authority
- US
- United States
- Prior art keywords
- selenium
- rectifier
- disk
- layer
- selenium rectifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title description 14
- 239000011669 selenium Substances 0.000 title description 14
- 229910052711 selenium Inorganic materials 0.000 title description 14
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/14—Treatment of the complete device, e.g. by electroforming to form a barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Definitions
- My invention relates to contact rectiflers and particularly to selenium rectiflers.
- FIG. 1 shows the element
- Fig. 2 the cross section of a rectifier element construction in accordance with the invention as exemplary embodiment
- the metal part 2 is pressed out of a round disk I, thereby the possibility is availed of depositing the layer of fused selenium on this projecting portion 2 without the loss of considerable amounts of the valuable selenium material.
- the remaining portion of the disk I projects over the metal portion 2, serves in the operation for' conducting away heat and, therefore, makes possible the loading of the rectifying layer with an essentially larger current density than is possible without the current conducting wide rim.
- the formation of the rectifier may, in such a case, for example, take place in the following manner; the bent out center surface 2 is freed of its usual oxide layer with the aid of a sand blast and, at the same time, roughened. On this now clean metal surface, the liquid selenium is deposited. At the same time, because of the bending out, it is possible to avoid the deposit of L,
- the central portion cover with the selenium layer 3 is subjected, under a press, to a sufficient pressure which makes possulphur layer produced in this manner, a low A melting temperature metal is sprayed, for example, an alloy of lead or bismuth, or cadmium or bismuth. Care must be taken that the sprayed on layer is sufflciently pure.
- a direct current potential in the blocking direce tion is-then impressed on the'rectifier disks prepared ln this manner. It may amount, for example, to 8-10 volts, suflicient current passing in the blocking direction to cause the disk to become quickly heated. In, doing this, the electrical resistance increases and this can be'recognized by an increase in the potential. As soon as the potential has arisen to approximately 18 volts, the formation of the rectifier element is finished. In the blocking direction, there passes, at this potential, only current of a few milliamperes.
- the disk I may also be composed of copper or one of its alloys, and when such good heat conduction is not required, also of a metal of the iron group.
- the disk may also'first be provided with a suitable base for the selenium layer consisting of another metal or of graphite for the purpose of dewhich is bent out so that it lies in a different plane than the remaining surface and a deposit of selenium on said bent out surface, said remaining surface surrounding said deposit.
- a selenium rectifier comprising an integral plate of aluminum alloy, a portion of the surface of which is bent out so'that it lies in a different plane than the remaining surface and a deposit of selenium on said bent out surface, said remaining surface surrounding said deposit.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Rectifiers (AREA)
Description
Nov. 4, 1941. QQPPE 2,261,725
SELENIUM RECTIFIER Filed June 13, 1939 WITNESSES: INVENTOR I a Georg flap 0e.
Patented Nov. 4; 1941 2,261,725 I snmmumnac'rrma Georg Hoppe, Berlin, Germany, assignor to Westinghouse Electric & Manufacturing Company, East Pittsburgh, Pa., a corporation of Pennsylvania Application June 13, 1939, Serial No. 278,841
In Germany May 18, 1938 3 Claims, (01. 175-366) My invention relates to contact rectiflers and particularly to selenium rectiflers.
An element for a selenium rectifier of high power is, in accordance with the invention, produced by bending out of a large sheet disk, the surface which is to be provided with the rectifying selenium layer. A rectifier element constructed in this manner is illustrated in the drawing. The details of the method of production will be explained with reference to the drawing. Figure 1 shows the element, Fig. 2 the cross section of a rectifier element construction in accordance with the invention as exemplary embodiment,
The metal part 2 is pressed out of a round disk I, thereby the possibility is availed of depositing the layer of fused selenium on this projecting portion 2 without the loss of considerable amounts of the valuable selenium material. The remaining portion of the disk I projects over the metal portion 2, serves in the operation for' conducting away heat and, therefore, makes possible the loading of the rectifying layer with an essentially larger current density than is possible without the current conducting wide rim.
It is desirable to construct the disk I of aluminum since the latter is cheap and has only a small weight. In addition it is a good'heat-conduct'or so that the heat transfer is very effective,
The formation of the rectifier may, in such a case, for example, take place in the following manner; the bent out center surface 2 is freed of its usual oxide layer with the aid of a sand blast and, at the same time, roughened. On this now clean metal surface, the liquid selenium is deposited. At the same time, because of the bending out, it is possible to avoid the deposit of L,
substantially large amounts of selenium on the rim of the disk which should serve only for conducting heat away. The central portion cover with the selenium layer 3 is subjected, under a press, to a sufficient pressure which makes possulphur layer produced in this manner, a low A melting temperature metal is sprayed, for example, an alloy of lead or bismuth, or cadmium or bismuth. Care must be taken that the sprayed on layer is sufflciently pure.'
A direct current potential in the blocking direce tion is-then impressed on the'rectifier disks prepared ln this manner. It may amount, for example, to 8-10 volts, suflicient current passing in the blocking direction to cause the disk to become quickly heated. In, doing this, the electrical resistance increases and this can be'recognized by an increase in the potential. As soon as the potential has arisen to approximately 18 volts, the formation of the rectifier element is finished. In the blocking direction, there passes, at this potential, only current of a few milliamperes.
After this the necessary number of rectifier disks are, in the usual manner, disposed over each other and the rectifier thus produced may, as a consequence of the good heat transfer by the rim surrounding it in a ring, be loaded substantially higher than is otherwise the case. The disk I may also be composed of copper or one of its alloys, and when such good heat conduction is not required, also of a metal of the iron group. i The disk may also'first be provided with a suitable base for the selenium layer consisting of another metal or of graphite for the purpose of dewhich is bent out so that it lies in a different plane than the remaining surface and a deposit of selenium on said bent out surface, said remaining surface surrounding said deposit.
3. A selenium rectifier comprising an integral plate of aluminum alloy, a portion of the surface of which is bent out so'that it lies in a different plane than the remaining surface and a deposit of selenium on said bent out surface, said remaining surface surrounding said deposit.
GEORG HOPPE.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2261725X | 1938-05-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US2261725A true US2261725A (en) | 1941-11-04 |
Family
ID=32087698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US278841A Expired - Lifetime US2261725A (en) | 1938-05-18 | 1939-06-13 | Selenium rectifier |
Country Status (1)
| Country | Link |
|---|---|
| US (1) | US2261725A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2435681A (en) * | 1944-03-25 | 1948-02-10 | Automatic Elect Lab | Current rectifying system |
| US2437995A (en) * | 1943-11-10 | 1948-03-16 | Westinghouse Electric Corp | Selenium rectifiers |
| US2444473A (en) * | 1943-10-26 | 1948-07-06 | Standard Telephones Cables Ltd | Method of making rectifiers |
| US2449986A (en) * | 1943-02-15 | 1948-09-28 | Standard Telephones Cables Ltd | Manufacture of dry contact rectifiers |
| US2464066A (en) * | 1941-05-07 | 1949-03-08 | Hartford Nat Bank & Trust Co | Method of reducing the leakage current in selenium rectifiers |
| US2497649A (en) * | 1946-07-31 | 1950-02-14 | Gen Electric | Process of electroforming selenium rectifiers |
| US2510322A (en) * | 1945-09-22 | 1950-06-06 | Union Switch & Signal Co | Selenium rectifier |
| US2717964A (en) * | 1952-02-26 | 1955-09-13 | Parsegian Vozcan Lawrence | Sulfur crystal counter |
| DE969605C (en) * | 1952-02-19 | 1958-06-26 | Siemens Ag | Dry rectifier arrangement with rectifier plates assigned to one another in pairs |
-
1939
- 1939-06-13 US US278841A patent/US2261725A/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2464066A (en) * | 1941-05-07 | 1949-03-08 | Hartford Nat Bank & Trust Co | Method of reducing the leakage current in selenium rectifiers |
| US2449986A (en) * | 1943-02-15 | 1948-09-28 | Standard Telephones Cables Ltd | Manufacture of dry contact rectifiers |
| US2444473A (en) * | 1943-10-26 | 1948-07-06 | Standard Telephones Cables Ltd | Method of making rectifiers |
| US2437995A (en) * | 1943-11-10 | 1948-03-16 | Westinghouse Electric Corp | Selenium rectifiers |
| US2435681A (en) * | 1944-03-25 | 1948-02-10 | Automatic Elect Lab | Current rectifying system |
| US2510322A (en) * | 1945-09-22 | 1950-06-06 | Union Switch & Signal Co | Selenium rectifier |
| US2497649A (en) * | 1946-07-31 | 1950-02-14 | Gen Electric | Process of electroforming selenium rectifiers |
| DE969605C (en) * | 1952-02-19 | 1958-06-26 | Siemens Ag | Dry rectifier arrangement with rectifier plates assigned to one another in pairs |
| US2717964A (en) * | 1952-02-26 | 1955-09-13 | Parsegian Vozcan Lawrence | Sulfur crystal counter |
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