GB593808A - Selenium rectifier element and method of manufacturing same - Google Patents
Selenium rectifier element and method of manufacturing sameInfo
- Publication number
- GB593808A GB593808A GB3429/45A GB342945A GB593808A GB 593808 A GB593808 A GB 593808A GB 3429/45 A GB3429/45 A GB 3429/45A GB 342945 A GB342945 A GB 342945A GB 593808 A GB593808 A GB 593808A
- Authority
- GB
- United Kingdom
- Prior art keywords
- metal
- compound
- selenium
- metals
- solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052711 selenium Inorganic materials 0.000 title abstract 4
- 239000011669 selenium Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 abstract 6
- 239000002184 metal Substances 0.000 abstract 6
- 150000001875 compounds Chemical class 0.000 abstract 3
- 150000002739 metals Chemical class 0.000 abstract 2
- 239000002904 solvent Substances 0.000 abstract 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 abstract 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910002651 NO3 Inorganic materials 0.000 abstract 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 abstract 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 abstract 1
- 229910052776 Thorium Inorganic materials 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 230000005494 condensation Effects 0.000 abstract 1
- 238000009833 condensation Methods 0.000 abstract 1
- 229910052735 hafnium Inorganic materials 0.000 abstract 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 abstract 1
- 150000002366 halogen compounds Chemical class 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 150000002894 organic compounds Chemical class 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
- 229910052761 rare earth metal Inorganic materials 0.000 abstract 1
- 150000002910 rare earth metals Chemical class 0.000 abstract 1
- 238000005507 spraying Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/105—Treatment of the surface of the selenium or tellurium layer after having been made conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biotechnology (AREA)
- Rectifiers (AREA)
- Photovoltaic Devices (AREA)
Abstract
593,808. Light - sensitive cells.ALLMANNA SVENSKA ELEKTRISKA AKTIEBOLAGET. Feb. 12, 1945, No. 3429. Convention date, March 4, 1944. [Class 40 (iii)] [Also in Group XXXVI] A method of producing a barrier-layer selenium photo-electric cell includes the step of treating the selenium surface adjacent to the counter electrode with one or more of the metals thorium, hafnium, zirconium, titanium or the rare earth metals or their compounds other than halogen compounds. The metal or metals may be applied to the selenium surface by condensation of the vapour of the desired metal, by cathode sputtering, by spraying in a liquid state an alloy of the metal and the counter-electrode or, by treating with a solvent containing a compound of the desired metal in solution. The compound may consist of a nitrate, nitrite or an organic compound and the solvent may be alcohol or other organic solvent.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE593808X | 1944-03-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB593808A true GB593808A (en) | 1947-10-27 |
Family
ID=20312683
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3429/45A Expired GB593808A (en) | 1944-03-04 | 1945-02-12 | Selenium rectifier element and method of manufacturing same |
Country Status (5)
Country | Link |
---|---|
US (1) | US2458013A (en) |
BE (1) | BE458445A (en) |
FR (1) | FR909281A (en) |
GB (1) | GB593808A (en) |
NL (1) | NL79203C (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1539332B2 (en) * | 1967-03-21 | 1971-02-04 | Siemens AG, 1000 Berlin u 8000 München | Contact piece for contacting thermocouple legs in thermogenerators |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1866351A (en) * | 1927-01-29 | 1932-07-05 | Gen Electric | Rectification of alternating currents |
BE317010A (en) * | 1928-10-01 | |||
USB469610I5 (en) * | 1930-05-15 | |||
IT379083A (en) * | 1938-06-14 | |||
NL62048C (en) * | 1939-10-13 | |||
US2375355A (en) * | 1940-05-17 | 1945-05-08 | Bolidens Gruv Ab | Selenium rectifier |
US2362545A (en) * | 1942-01-29 | 1944-11-14 | Bell Telephone Labor Inc | Selenium rectifier and method of making it |
GB556152A (en) * | 1942-03-17 | 1943-09-22 | Westinghouse Brake & Signal | Improvements relating to alternating electric current rectifiers of the selenium type |
US2391194A (en) * | 1942-07-29 | 1945-12-18 | B L Electric Company | Rectifiers |
GB560869A (en) * | 1942-10-19 | 1944-04-25 | Westinghouse Brake & Signal | Improvements relating to alternating electric current rectifiers of the selenium type |
-
0
- NL NL79203D patent/NL79203C/xx active
- BE BE458445D patent/BE458445A/xx unknown
-
1945
- 1945-02-12 GB GB3429/45A patent/GB593808A/en not_active Expired
- 1945-02-14 FR FR909281D patent/FR909281A/en not_active Expired
- 1945-02-27 US US580077A patent/US2458013A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US2458013A (en) | 1949-01-04 |
BE458445A (en) | |
NL79203C (en) | |
FR909281A (en) | 1946-05-03 |
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