GB593808A - Selenium rectifier element and method of manufacturing same - Google Patents

Selenium rectifier element and method of manufacturing same

Info

Publication number
GB593808A
GB593808A GB3429/45A GB342945A GB593808A GB 593808 A GB593808 A GB 593808A GB 3429/45 A GB3429/45 A GB 3429/45A GB 342945 A GB342945 A GB 342945A GB 593808 A GB593808 A GB 593808A
Authority
GB
United Kingdom
Prior art keywords
metal
compound
selenium
metals
solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3429/45A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB Norden Holding AB
Original Assignee
ASEA AB
Allmanna Svenska Elektriska AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASEA AB, Allmanna Svenska Elektriska AB filed Critical ASEA AB
Publication of GB593808A publication Critical patent/GB593808A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108Provision of discrete insulating layers, i.e. non-genetic barrier layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/105Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/12Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biotechnology (AREA)
  • Rectifiers (AREA)
  • Photovoltaic Devices (AREA)

Abstract

593,808. Light - sensitive cells.ALLMANNA SVENSKA ELEKTRISKA AKTIEBOLAGET. Feb. 12, 1945, No. 3429. Convention date, March 4, 1944. [Class 40 (iii)] [Also in Group XXXVI] A method of producing a barrier-layer selenium photo-electric cell includes the step of treating the selenium surface adjacent to the counter electrode with one or more of the metals thorium, hafnium, zirconium, titanium or the rare earth metals or their compounds other than halogen compounds. The metal or metals may be applied to the selenium surface by condensation of the vapour of the desired metal, by cathode sputtering, by spraying in a liquid state an alloy of the metal and the counter-electrode or, by treating with a solvent containing a compound of the desired metal in solution. The compound may consist of a nitrate, nitrite or an organic compound and the solvent may be alcohol or other organic solvent.
GB3429/45A 1944-03-04 1945-02-12 Selenium rectifier element and method of manufacturing same Expired GB593808A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE593808X 1944-03-04

Publications (1)

Publication Number Publication Date
GB593808A true GB593808A (en) 1947-10-27

Family

ID=20312683

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3429/45A Expired GB593808A (en) 1944-03-04 1945-02-12 Selenium rectifier element and method of manufacturing same

Country Status (5)

Country Link
US (1) US2458013A (en)
BE (1) BE458445A (en)
FR (1) FR909281A (en)
GB (1) GB593808A (en)
NL (1) NL79203C (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1539332B2 (en) * 1967-03-21 1971-02-04 Siemens AG, 1000 Berlin u 8000 München Contact piece for contacting thermocouple legs in thermogenerators

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1866351A (en) * 1927-01-29 1932-07-05 Gen Electric Rectification of alternating currents
BE317010A (en) * 1928-10-01
USB469610I5 (en) * 1930-05-15
IT379083A (en) * 1938-06-14
NL62048C (en) * 1939-10-13
US2375355A (en) * 1940-05-17 1945-05-08 Bolidens Gruv Ab Selenium rectifier
US2362545A (en) * 1942-01-29 1944-11-14 Bell Telephone Labor Inc Selenium rectifier and method of making it
GB556152A (en) * 1942-03-17 1943-09-22 Westinghouse Brake & Signal Improvements relating to alternating electric current rectifiers of the selenium type
US2391194A (en) * 1942-07-29 1945-12-18 B L Electric Company Rectifiers
GB560869A (en) * 1942-10-19 1944-04-25 Westinghouse Brake & Signal Improvements relating to alternating electric current rectifiers of the selenium type

Also Published As

Publication number Publication date
US2458013A (en) 1949-01-04
BE458445A (en)
NL79203C (en)
FR909281A (en) 1946-05-03

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