GB2512261B - Semiconductor arrangement with active drift zone - Google Patents

Semiconductor arrangement with active drift zone

Info

Publication number
GB2512261B
GB2512261B GB1413011.6A GB201413011A GB2512261B GB 2512261 B GB2512261 B GB 2512261B GB 201413011 A GB201413011 A GB 201413011A GB 2512261 B GB2512261 B GB 2512261B
Authority
GB
United Kingdom
Prior art keywords
drift zone
semiconductor arrangement
active drift
active
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB1413011.6A
Other languages
English (en)
Other versions
GB201413011D0 (en
GB2512261A (en
Inventor
Weis Rolf
Treu Michael
Deboy Gerald
Willmeroth Armin
Weber Hans
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Dresden GmbH and Co KG
Original Assignee
Infineon Technologies Dresden GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Dresden GmbH and Co KG filed Critical Infineon Technologies Dresden GmbH and Co KG
Priority to GB1607143.3A priority Critical patent/GB2534761B/en
Publication of GB201413011D0 publication Critical patent/GB201413011D0/en
Publication of GB2512261A publication Critical patent/GB2512261A/en
Application granted granted Critical
Publication of GB2512261B publication Critical patent/GB2512261B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/834—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/011—Manufacture or treatment comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H10D86/215—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI comprising FinFETs
GB1413011.6A 2012-01-31 2013-01-30 Semiconductor arrangement with active drift zone Expired - Fee Related GB2512261B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1607143.3A GB2534761B (en) 2012-01-31 2013-01-30 Semiconductor arrangement with active drift zone

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/362,038 US8866253B2 (en) 2012-01-31 2012-01-31 Semiconductor arrangement with active drift zone
PCT/EP2013/051827 WO2013113771A1 (en) 2012-01-31 2013-01-30 Semiconductor arrangement with active drift zone

Publications (3)

Publication Number Publication Date
GB201413011D0 GB201413011D0 (en) 2014-09-03
GB2512261A GB2512261A (en) 2014-09-24
GB2512261B true GB2512261B (en) 2016-07-06

Family

ID=47748579

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1413011.6A Expired - Fee Related GB2512261B (en) 2012-01-31 2013-01-30 Semiconductor arrangement with active drift zone
GB1607143.3A Expired - Fee Related GB2534761B (en) 2012-01-31 2013-01-30 Semiconductor arrangement with active drift zone

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB1607143.3A Expired - Fee Related GB2534761B (en) 2012-01-31 2013-01-30 Semiconductor arrangement with active drift zone

Country Status (8)

Country Link
US (2) US8866253B2 (enExample)
JP (2) JP2015513782A (enExample)
KR (1) KR101665836B1 (enExample)
CN (1) CN104247015A (enExample)
BR (1) BR112014018710A8 (enExample)
DE (1) DE112013000784B4 (enExample)
GB (2) GB2512261B (enExample)
WO (1) WO2013113771A1 (enExample)

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US8455948B2 (en) * 2011-01-07 2013-06-04 Infineon Technologies Austria Ag Transistor arrangement with a first transistor and with a plurality of second transistors
US8569842B2 (en) * 2011-01-07 2013-10-29 Infineon Technologies Austria Ag Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices
US8866253B2 (en) * 2012-01-31 2014-10-21 Infineon Technologies Dresden Gmbh Semiconductor arrangement with active drift zone
US9859274B2 (en) 2012-07-11 2018-01-02 Infineon Technologies Dresden Gmbh Integrated circuit with at least two switches
US8995158B2 (en) * 2012-07-11 2015-03-31 Infineon Technologies Dresden Gmbh Circuit arrangement with a rectifier circuit
US8971080B2 (en) 2012-07-11 2015-03-03 Infineon Technologies Dresden Gmbh Circuit arrangement with a rectifier circuit
US9035690B2 (en) 2012-08-30 2015-05-19 Infineon Technologies Dresden Gmbh Circuit arrangement with a first semiconductor device and with a plurality of second semiconductor devices
US9209248B2 (en) * 2013-08-07 2015-12-08 Infineon Technologies Dresden Gmbh Power transistor
US9768160B2 (en) 2013-08-09 2017-09-19 Infineon Technologies Austria Ag Semiconductor device, electronic circuit and method for switching high voltages
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KR102169629B1 (ko) * 2013-12-09 2020-10-26 삼성전자주식회사 반도체 소자의 테스트 패턴
US9325308B2 (en) * 2014-05-30 2016-04-26 Delta Electronics, Inc. Semiconductor device and cascode circuit
CN105405884B (zh) * 2014-09-10 2019-01-22 中国科学院微电子研究所 一种FinFET结构及其制造方法
CN105405885B (zh) * 2014-09-10 2018-09-07 中国科学院微电子研究所 一种cmos结构及其制造方法
CN105405841A (zh) * 2014-09-10 2016-03-16 中国科学院微电子研究所 一种U型FinFET与非门结构及其制造方法
CN105405886B (zh) * 2014-09-10 2018-09-07 中国科学院微电子研究所 一种FinFET结构及其制造方法
CN105470298B (zh) * 2014-09-10 2018-10-02 中国科学院微电子研究所 一种FinFET器件结构及其制造方法
CN105470299B (zh) * 2014-09-10 2018-10-02 中国科学院微电子研究所 一种FinFET结构及其制造方法
US9659929B2 (en) * 2014-10-31 2017-05-23 Infineon Technologies Dresden Gmbh Semiconductor device with enhancement and depletion FinFET cells
US9559644B2 (en) * 2014-11-03 2017-01-31 Qorvo Us, Inc. Low noise amplifier
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US9805990B2 (en) * 2015-06-26 2017-10-31 Globalfoundries Inc. FDSOI voltage reference
US9799763B2 (en) * 2015-08-31 2017-10-24 Intersil Americas LLC Method and structure for reducing switching power losses
US9813056B2 (en) * 2015-09-21 2017-11-07 Analog Devices Global Active device divider circuit with adjustable IQ
US10096681B2 (en) * 2016-05-23 2018-10-09 General Electric Company Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells
DE102018214628B4 (de) * 2018-08-29 2020-09-03 Robert Bosch Gmbh Leistungsfeldeffekttransistor
DE102019102371B4 (de) * 2019-01-30 2023-07-06 Infineon Technologies Ag Transistoranordnung und verfahren zum betreiben einer transistoranordnung
GB2587793B (en) * 2019-08-21 2023-03-22 Pragmatic Printing Ltd Electronic circuit comprising transistor and resistor
JP7148476B2 (ja) * 2019-10-25 2022-10-05 株式会社東芝 電力切替器、電力整流器及び電力変換器
JP7240349B2 (ja) 2020-03-19 2023-03-15 株式会社東芝 半導体回路及びブリッジ回路
CN113643982B (zh) * 2021-08-12 2022-05-31 深圳市芯电元科技有限公司 一种改善栅极特性的mosfet芯片制造方法
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US4367421A (en) * 1980-04-21 1983-01-04 Reliance Electric Company Biasing methods and circuits for series connected transistor switches
DE3100795A1 (de) * 1980-07-09 1982-08-05 Siemens AG, 1000 Berlin und 8000 München Schalter mit in serie geschalteten feldeffekttransistoren
US4487458A (en) * 1982-09-28 1984-12-11 Eaton Corporation Bidirectional source to source stacked FET gating circuit
DE3335475A1 (de) * 1983-09-30 1985-05-02 ANT Nachrichtentechnik GmbH, 7150 Backnang Schalter mit in serie geschalteten feldeffekttransistoren
EP0140349A2 (en) * 1983-10-28 1985-05-08 Hitachi, Ltd. Semiconductor switching device
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US20100032671A1 (en) * 2008-08-08 2010-02-11 Texas Instruments Incorporated Degradation correction for finfet circuits
US20100078694A1 (en) * 2008-09-30 2010-04-01 Infineon Technologies Austria Ag Semiconductor component having a drift zone and a drift control zone
WO2012093177A2 (en) * 2011-01-07 2012-07-12 Infineon Technologies Austria Ag Semiconductor device arrangement with a first semiconductor device and with a plurality of second semi conductor devices
EP2521259A2 (en) * 2011-05-06 2012-11-07 Sharp Kabushiki Kaisha Semiconductor device and electronic device

Also Published As

Publication number Publication date
US8866253B2 (en) 2014-10-21
US9530764B2 (en) 2016-12-27
JP2015513782A (ja) 2015-05-14
US20130193525A1 (en) 2013-08-01
JP2016201547A (ja) 2016-12-01
GB2534761A (en) 2016-08-03
GB2534761B (en) 2016-09-21
DE112013000784T5 (de) 2014-12-04
GB201413011D0 (en) 2014-09-03
BR112014018710A8 (pt) 2017-07-11
BR112014018710A2 (enExample) 2017-06-20
US20150041915A1 (en) 2015-02-12
KR101665836B1 (ko) 2016-10-12
KR20140114411A (ko) 2014-09-26
GB2512261A (en) 2014-09-24
DE112013000784B4 (de) 2020-07-02
WO2013113771A1 (en) 2013-08-08
CN104247015A (zh) 2014-12-24

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PCNP Patent ceased through non-payment of renewal fee

Effective date: 20250130