GB2203009B - A method of forming josephson junction devices - Google Patents

A method of forming josephson junction devices

Info

Publication number
GB2203009B
GB2203009B GB8801989A GB8801989A GB2203009B GB 2203009 B GB2203009 B GB 2203009B GB 8801989 A GB8801989 A GB 8801989A GB 8801989 A GB8801989 A GB 8801989A GB 2203009 B GB2203009 B GB 2203009B
Authority
GB
United Kingdom
Prior art keywords
josephson junction
junction devices
forming josephson
forming
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB8801989A
Other languages
English (en)
Other versions
GB8801989D0 (en
GB2203009A (en
Inventor
Hirozi Yamada
Sachiko Kizaki
Hiroyuki Mori
Yoshinobu Taruntani
Mikio Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Publication of GB8801989D0 publication Critical patent/GB8801989D0/en
Publication of GB2203009A publication Critical patent/GB2203009A/en
Application granted granted Critical
Publication of GB2203009B publication Critical patent/GB2203009B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/089—Josephson devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/80—Material per se process of making same
    • Y10S505/815—Process of making per se
    • Y10S505/818—Coating
    • Y10S505/82—And etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/831—Static information storage system or device
    • Y10S505/832—Josephson junction type

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Drying Of Semiconductors (AREA)
GB8801989A 1987-03-24 1988-01-29 A method of forming josephson junction devices Expired - Fee Related GB2203009B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62067791A JPS63234533A (ja) 1987-03-24 1987-03-24 ジヨセフソン接合素子の形成方法

Publications (3)

Publication Number Publication Date
GB8801989D0 GB8801989D0 (en) 1988-02-24
GB2203009A GB2203009A (en) 1988-10-05
GB2203009B true GB2203009B (en) 1991-02-20

Family

ID=13355126

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8801989A Expired - Fee Related GB2203009B (en) 1987-03-24 1988-01-29 A method of forming josephson junction devices

Country Status (4)

Country Link
US (1) US4904619A (enExample)
JP (1) JPS63234533A (enExample)
DE (1) DE3803511A1 (enExample)
GB (1) GB2203009B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63234533A (ja) * 1987-03-24 1988-09-29 Agency Of Ind Science & Technol ジヨセフソン接合素子の形成方法
JPH02203576A (ja) * 1989-02-02 1990-08-13 Agency Of Ind Science & Technol ジョセフソン接合素子の形成方法
US5021867A (en) * 1989-05-30 1991-06-04 Westinghouse Electric Corp. Refractory resistors with etch stop for superconductor integrated circuits
NL8901874A (nl) * 1989-07-20 1991-02-18 Philips Nv Planaire josephson inrichting.
JPH03233982A (ja) * 1990-02-09 1991-10-17 Hitachi Ltd ジョセフソン接合素子のパターン形成方法
US5055158A (en) * 1990-09-25 1991-10-08 International Business Machines Corporation Planarization of Josephson integrated circuit
US5286336A (en) * 1991-07-23 1994-02-15 Trw Inc. Submicron Josephson junction and method for its fabrication
GB2288094A (en) * 1994-03-25 1995-10-04 Secr Defence Superconductive junction
JP3349001B2 (ja) * 1994-12-29 2002-11-20 ソニー株式会社 金属膜の形成方法
US8236484B2 (en) * 2003-11-14 2012-08-07 Headway Technologies, Inc. Single layer resist liftoff process for nano track width
US7615385B2 (en) 2006-09-20 2009-11-10 Hypres, Inc Double-masking technique for increasing fabrication yield in superconducting electronics
US9741918B2 (en) 2013-10-07 2017-08-22 Hypres, Inc. Method for increasing the integration level of superconducting electronics circuits, and a resulting circuit
WO2018052424A1 (en) * 2016-09-15 2018-03-22 Google Llc Capping layer for reducing ion mill damage
CN110635022A (zh) * 2019-09-27 2019-12-31 江苏鲁汶仪器有限公司 一种铌基约瑟夫森结刻蚀方法
US11683995B2 (en) 2020-08-03 2023-06-20 International Business Machines Corporation Lithography for fabricating Josephson junctions
CN111933788B (zh) * 2020-08-11 2024-05-31 中国科学院紫金山天文台 一种制备高质量超导隧道结电路的方法
CN114566588A (zh) * 2022-03-09 2022-05-31 中国科学院上海微系统与信息技术研究所 一种基于MoN的SNS约瑟夫森结及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5732653A (en) * 1980-08-05 1982-02-22 Fujitsu Ltd Manufacture of semiconductor device
JPS57204124A (en) * 1981-06-10 1982-12-14 Hitachi Ltd Forming method for minute pattern
JPS5874042A (ja) * 1981-10-29 1983-05-04 Nec Corp 半導体装置の製造方法
US4418095A (en) * 1982-03-26 1983-11-29 Sperry Corporation Method of making planarized Josephson junction devices
JPS58176983A (ja) * 1982-04-12 1983-10-17 Agency Of Ind Science & Technol ジヨセフソン接合素子の作成方法
US4432134A (en) * 1982-05-10 1984-02-21 Rockwell International Corporation Process for in-situ formation of niobium-insulator-niobium Josephson tunnel junction devices
DE3370901D1 (en) * 1982-05-31 1987-05-14 Nec Corp Method of producing josephson tunnel barrier
JPS60113484A (ja) * 1983-11-24 1985-06-19 Fujitsu Ltd ジョセフソン集積回路装置の製造方法
JPS60208874A (ja) * 1984-04-03 1985-10-21 Nec Corp ジヨセフソン接合素子の製造方法
JPS6146081A (ja) * 1984-08-10 1986-03-06 Nec Corp ジヨセフソン接合素子の製造方法
US4560435A (en) * 1984-10-01 1985-12-24 International Business Machines Corporation Composite back-etch/lift-off stencil for proximity effect minimization
JPS61245585A (ja) * 1985-04-23 1986-10-31 Nec Corp ジヨセフソン接合素子の製造方法
JPS6257262A (ja) * 1985-09-06 1987-03-12 Agency Of Ind Science & Technol ジヨセフソン接合素子の製造方法
JPS6386487A (ja) * 1986-09-30 1988-04-16 Agency Of Ind Science & Technol ジヨセフソン集積回路の抵抗体の製造方法
JPS6394692A (ja) * 1986-10-09 1988-04-25 Agency Of Ind Science & Technol ジヨセフソン接合素子の製造方法
JPS63234533A (ja) * 1987-03-24 1988-09-29 Agency Of Ind Science & Technol ジヨセフソン接合素子の形成方法

Also Published As

Publication number Publication date
DE3803511A1 (de) 1988-10-06
GB8801989D0 (en) 1988-02-24
US4904619A (en) 1990-02-27
JPS63234533A (ja) 1988-09-29
GB2203009A (en) 1988-10-05
DE3803511C2 (enExample) 1992-02-13

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19980129