GB201117279D0 - Etched silicon structures, method of forming etched silicon structures and uses thereof - Google Patents

Etched silicon structures, method of forming etched silicon structures and uses thereof

Info

Publication number
GB201117279D0
GB201117279D0 GBGB1117279.8A GB201117279A GB201117279D0 GB 201117279 D0 GB201117279 D0 GB 201117279D0 GB 201117279 A GB201117279 A GB 201117279A GB 201117279 D0 GB201117279 D0 GB 201117279D0
Authority
GB
United Kingdom
Prior art keywords
etched silicon
silicon structures
silicon
forming
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB1117279.8A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nexeon Ltd
Original Assignee
Nexeon Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nexeon Ltd filed Critical Nexeon Ltd
Priority to GBGB1117279.8A priority Critical patent/GB201117279D0/en
Publication of GB201117279D0 publication Critical patent/GB201117279D0/en
Priority to US14/349,498 priority patent/US20140248539A1/en
Priority to PCT/GB2012/052483 priority patent/WO2013050785A1/en
Priority to CN201280060454.7A priority patent/CN103988342A/zh
Priority to JP2014533992A priority patent/JP2015504568A/ja
Priority to GB1217909.9A priority patent/GB2495405B/en
Priority to KR1020147012116A priority patent/KR20140083006A/ko
Priority to EP12772390.6A priority patent/EP2764563B1/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H01M4/0402—Methods of deposition of the material
    • H01M4/0404—Methods of deposition of the material by coating on electrode collectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/134—Electrodes based on metals, Si or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/139—Processes of manufacture
    • H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
    • H01M4/386—Silicon or alloys based on silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/052—Li-accumulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M2220/00—Batteries for particular applications
    • H01M2220/30—Batteries in portable systems, e.g. mobile phone, laptop
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Secondary Cells (AREA)
GBGB1117279.8A 2011-10-06 2011-10-06 Etched silicon structures, method of forming etched silicon structures and uses thereof Ceased GB201117279D0 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
GBGB1117279.8A GB201117279D0 (en) 2011-10-06 2011-10-06 Etched silicon structures, method of forming etched silicon structures and uses thereof
US14/349,498 US20140248539A1 (en) 2011-10-06 2012-10-05 Etched silicon structures, method of forming etched silicon structures and uses thereof
PCT/GB2012/052483 WO2013050785A1 (en) 2011-10-06 2012-10-05 Etched silicon structures, method of forming etched silicon structures and uses thereof
CN201280060454.7A CN103988342A (zh) 2011-10-06 2012-10-05 蚀刻的硅结构、形成蚀刻的硅结构的方法及其应用
JP2014533992A JP2015504568A (ja) 2011-10-06 2012-10-05 エッチングされたシリコン構造、エッチングされたシリコン構造を形成する方法及びそれらの使用
GB1217909.9A GB2495405B (en) 2011-10-06 2012-10-05 Etched silicon structures, method of forming etched silicon structures and uses thereof
KR1020147012116A KR20140083006A (ko) 2011-10-06 2012-10-05 에칭된 실리콘 구조, 이의 제조방법 및 이의 용도
EP12772390.6A EP2764563B1 (en) 2011-10-06 2012-10-05 Etched silicon structures, method of forming etched silicon structures and uses thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1117279.8A GB201117279D0 (en) 2011-10-06 2011-10-06 Etched silicon structures, method of forming etched silicon structures and uses thereof

Publications (1)

Publication Number Publication Date
GB201117279D0 true GB201117279D0 (en) 2011-11-16

Family

ID=45035271

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB1117279.8A Ceased GB201117279D0 (en) 2011-10-06 2011-10-06 Etched silicon structures, method of forming etched silicon structures and uses thereof
GB1217909.9A Expired - Fee Related GB2495405B (en) 2011-10-06 2012-10-05 Etched silicon structures, method of forming etched silicon structures and uses thereof

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB1217909.9A Expired - Fee Related GB2495405B (en) 2011-10-06 2012-10-05 Etched silicon structures, method of forming etched silicon structures and uses thereof

Country Status (7)

Country Link
US (1) US20140248539A1 (https=)
EP (1) EP2764563B1 (https=)
JP (1) JP2015504568A (https=)
KR (1) KR20140083006A (https=)
CN (1) CN103988342A (https=)
GB (2) GB201117279D0 (https=)
WO (1) WO2013050785A1 (https=)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201122315D0 (en) * 2011-12-23 2012-02-01 Nexeon Ltd Etched silicon structures, method of forming etched silicon structures and uses thereof
CN104411338A (zh) * 2012-04-02 2015-03-11 现代治疗公司 用于产生与人类疾病相关的生物制剂和蛋白质的修饰多核苷酸
WO2013151665A2 (en) * 2012-04-02 2013-10-10 modeRNA Therapeutics Modified polynucleotides for the production of proteins associated with human disease
JP6448057B2 (ja) * 2013-05-30 2019-01-09 エルジー・ケム・リミテッド 多孔性シリコン系負極活物質、この製造方法、及びこれを含むリチウム二次電池
CN105580170A (zh) * 2013-08-14 2016-05-11 得克萨斯州大学系统董事会 制造硅纳米线的方法和包含硅纳米线的器件
US10086317B2 (en) 2013-10-30 2018-10-02 Hewlett-Packard Development Company, L.P. Island etched filter passages
US9938139B2 (en) * 2013-10-30 2018-04-10 Hewlett-Packard Development Company, L.P. Nonparallel island etching
WO2015084036A1 (ko) 2013-12-03 2015-06-11 주식회사 엘지화학 다공성 실리콘계 음극 활물질, 이의 제조방법 및 이를 포함하는 리튬 이차전지
CN104803342B (zh) * 2014-01-23 2016-08-17 清华大学 碗状金属纳米结构的制备方法
JP6121959B2 (ja) * 2014-09-11 2017-04-26 株式会社東芝 エッチング方法、物品及び半導体装置の製造方法、並びにエッチング液
KR101677023B1 (ko) * 2014-10-17 2016-11-17 한양대학교 에리카산학협력단 실리콘 표면 에칭방법 및 시드층 형성방법
DE102015212202A1 (de) * 2015-06-30 2017-01-05 Robert Bosch Gmbh Siliciummonolith-Graphit-Anode für eine Lithium-Zelle
KR101801789B1 (ko) 2015-11-05 2017-11-28 한국과학기술연구원 다공성 탄소 재료 및 이의 제조 방법
KR101859811B1 (ko) * 2016-03-07 2018-06-28 한국과학기술원 금속 나노입자와 금속 초박막이 코팅된 전도성 단결정 실리콘 입자, 이를 포함하는 고용량 이차전지용 음극활물질 및 그 제조방법
US11289700B2 (en) 2016-06-28 2022-03-29 The Research Foundation For The State University Of New York KVOPO4 cathode for sodium ion batteries
CN108075164A (zh) * 2016-11-09 2018-05-25 林逸樵 二次电池及其制作方法
CN108232204A (zh) * 2016-12-10 2018-06-29 中国科学院大连化学物理研究所 一种硅基有序化电极及其制备方法和应用
WO2018119679A1 (en) * 2016-12-27 2018-07-05 China Triumph International Engineering Co., Ltd. Method for activation of cdte layer of cdte thin-film solar cells with calcium hypochlorite
JP7134778B2 (ja) * 2018-08-09 2022-09-12 株式会社東芝 処理システム
CN109597250B (zh) * 2018-12-26 2021-06-01 Tcl华星光电技术有限公司 蓝相液晶面板的制作方法及其立体电极的制作方法
CN110803706B (zh) * 2019-12-04 2023-03-28 宝鸡文理学院 一种快速高效脱除介孔氧化硅材料模板剂的方法
WO2021167434A1 (ko) * 2020-02-20 2021-08-26 한양대학교 에리카산학협력단 금속 음극 전극, 이를 포함하는 이차 전지, 및 그 제조 방법
WO2021167431A1 (ko) 2020-02-20 2021-08-26 한양대학교 에리카산학협력단 복합 섬유, 이를 포함하는 고체 전해질, 및 이를 포함하는 금속 공기 전지
WO2022065450A1 (ja) * 2020-09-25 2022-03-31 国立大学法人東北大学 リチウムイオン二次電池用の負極合剤、およびリチウムイオン二次電池
JP2023183441A (ja) * 2022-06-16 2023-12-28 国立大学法人 名古屋工業大学 シリコンポーラス層及びポーラスシリコンナノワイヤーを備えるシリコンナノ構造とナノカーボンとの複合体
US12315736B2 (en) 2022-09-14 2025-05-27 Applied Materials, Inc. Methods of highly selective silicon oxide removal
WO2024249394A1 (en) * 2023-05-27 2024-12-05 University Of Louisville Research Foundation, Inc. Materials and methods for high energy density silicon lithium ion batteries
KR102861629B1 (ko) * 2024-06-03 2025-09-17 한화모멘텀 주식회사 음극재 및 이의 제조방법, 이를 포함하는 리튬이온 이차전지
CN119419233B (zh) * 2024-10-09 2025-12-19 浙江锂威能源科技有限公司 一种金属镀层包覆硅基材料及二次电池

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436259A (en) * 1966-05-12 1969-04-01 Ibm Method for plating and polishing a silicon planar surface
JP3186621B2 (ja) * 1996-12-24 2001-07-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6399177B1 (en) 1999-06-03 2002-06-04 The Penn State Research Foundation Deposited thin film void-column network materials
US6790785B1 (en) * 2000-09-15 2004-09-14 The Board Of Trustees Of The University Of Illinois Metal-assisted chemical etch porous silicon formation method
GB2395059B (en) 2002-11-05 2005-03-16 Imp College Innovations Ltd Structured silicon anode
US7244513B2 (en) * 2003-02-21 2007-07-17 Nano-Proprietary, Inc. Stain-etched silicon powder
FR2853562B1 (fr) * 2003-04-14 2006-08-11 Centre Nat Rech Scient Procede de fabrication de granules semiconducteurs
TW200620451A (en) * 2004-11-09 2006-06-16 Univ Osaka Method for forming hole in crystal substrate, and crystal substrate having hole formed by the method
DE102005041877A1 (de) * 2005-09-02 2007-03-08 Koynov, Svetoslav, Dr. Verfahren zur Herstellung siliziumhaltiger Oberflächen und optoelektronische Bauelemente
GB0601318D0 (en) * 2006-01-23 2006-03-01 Imp Innovations Ltd Method of etching a silicon-based material
CN101496199B (zh) * 2006-10-10 2010-12-22 松下电器产业株式会社 非水电解质二次电池用负极
JP2008171802A (ja) * 2006-12-13 2008-07-24 Matsushita Electric Ind Co Ltd 非水電解質二次電池用負極とその製造方法およびそれを用いた非水電解質二次電池
FR2914925B1 (fr) 2007-04-13 2009-06-05 Altis Semiconductor Snc Solution utilisee dans la fabrication d'un materiau semi-conducteur poreux et procede de fabrication dudit materiau
GB0709165D0 (en) * 2007-05-11 2007-06-20 Nexeon Ltd A silicon anode for a rechargeable battery
GB0713898D0 (en) * 2007-07-17 2007-08-29 Nexeon Ltd A method of fabricating structured particles composed of silcon or a silicon-based material and their use in lithium rechargeable batteries
US8815104B2 (en) * 2008-03-21 2014-08-26 Alliance For Sustainable Energy, Llc Copper-assisted, anti-reflection etching of silicon surfaces
US8486843B2 (en) * 2008-09-04 2013-07-16 The Board Of Trustrees Of The University Of Illinois Method of forming nanoscale three-dimensional patterns in a porous material
GB2464158B (en) * 2008-10-10 2011-04-20 Nexeon Ltd A method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
EP2226374B1 (en) * 2009-03-06 2012-05-16 S.O.I. TEC Silicon Etching composition, in particular for silicon materials, method for characterizing defects of such materials and process of treating such surfaces with etching composition
WO2010114887A1 (en) * 2009-03-31 2010-10-07 Georgia Tech Research Corporation Metal-assisted chemical etching of substrates
KR101103841B1 (ko) * 2009-05-27 2012-01-06 한국과학기술연구원 금속이온 이용 무전해 에칭법에 의한 다발구조의 실리콘 나노로드 제조방법 및 이를 함유하는 리튬이차전지용 음극 활물질
GB0922063D0 (en) 2009-12-17 2010-02-03 Intrinsiq Materials Global Ltd Porous silicon
TWI472477B (zh) 2010-03-02 2015-02-11 國立臺灣大學 矽奈米結構與其製造方法及應用
GB201005979D0 (en) * 2010-04-09 2010-05-26 Nexeon Ltd A method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries

Also Published As

Publication number Publication date
GB2495405A (en) 2013-04-10
GB2495405B (en) 2014-11-12
JP2015504568A (ja) 2015-02-12
KR20140083006A (ko) 2014-07-03
CN103988342A (zh) 2014-08-13
GB201217909D0 (en) 2012-11-21
EP2764563B1 (en) 2016-09-21
US20140248539A1 (en) 2014-09-04
EP2764563A1 (en) 2014-08-13
WO2013050785A1 (en) 2013-04-11

Similar Documents

Publication Publication Date Title
GB201217909D0 (en) Etched silicon structures, method of forming etched silicon structures and uses thereof
GB201305214D0 (en) Etched silicon structures, method of forming etched silicon structures and uses thereof
WO2013006583A3 (en) Template electrode structures with enhanced adhesion characteristics
WO2012121067A8 (ja) ナノギャップ長を有する電極構造の作製方法並びにそれにより得られるナノギャップ長を有する電極構造及びナノデバイス
WO2012058553A3 (en) Oxidized graphite and carbon fiber
WO2010129910A3 (en) Electrode including nanostructures for rechargeable cells
WO2012036519A3 (ko) 마그네슘 이차전지용 전극 및 이를 구비한 마그네슘 이차전지
WO2012175301A3 (de) Chemisch behandelte stromableiterfolie aus aluminium oder einer aluminiumlegierung
MY162468A (en) Electrolytic copper foil and method for producing the same
MY175353A (en) Metallization of solar cells using metal foils
WO2013181117A3 (en) Removal of stressor layer from a spalled layer and method of making a bifacial solar cell using the same
IN2013CN00291A (https=)
WO2009102629A3 (en) Electrical apparatus with integral thin film solid state battery and methods of manufacture
WO2013009457A3 (en) Methods to fabricate variations in porosity of lithium ion battery electrode films
MY170351A (en) Method of controlling corrosion rate in downhole article, and downhole article having controlled corrosion rate
WO2017183814A3 (ko) 리튬이온 이차전지 음극용 샌드위치형 그래핀 복합구조체와 이의 제조방법
WO2012170311A3 (en) Batteries with nanostructured electrodes and associated methods
WO2011061011A3 (en) Holey electrode grids for photovoltaic cells with subwavelength and superwavelength feature sizes
CL2016001182A1 (es) Dispositivos y métodos de reciclaje de baterías ácidas de plomo sin necesidad de fundición
WO2010099892A3 (de) Solarzellen mit rückseitenkontaktierung sowie verfahren zu deren herstellung
GB2495166A (en) Single-junction photovoltaic cell
MY174160A (en) Polyvinylidene fluoride resin particles and method for producing same
EP2429005A3 (en) Method for manufacturing a mono-crystalline silicon solar cell and etching method thereof
TW201129497A (en) silicon substrate having nanostructures and method for producing the same and application thereof
WO2014195324A3 (en) Core-shell type anode active material for lithium secondary batteries, method for preparing the same and lithium secondary batteries containing the same

Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)