GB2002980A - Field effect transistor circuits - Google Patents

Field effect transistor circuits

Info

Publication number
GB2002980A
GB2002980A GB7829459A GB7829459A GB2002980A GB 2002980 A GB2002980 A GB 2002980A GB 7829459 A GB7829459 A GB 7829459A GB 7829459 A GB7829459 A GB 7829459A GB 2002980 A GB2002980 A GB 2002980A
Authority
GB
United Kingdom
Prior art keywords
drain
input current
resistor
gate
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7829459A
Other versions
GB2002980B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Priority to GB7829459A priority Critical patent/GB2002980B/en
Publication of GB2002980A publication Critical patent/GB2002980A/en
Application granted granted Critical
Publication of GB2002980B publication Critical patent/GB2002980B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K4/00—Generating pulses having essentially a finite slope or stepped portions
    • H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
    • H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
    • H03K4/48—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices
    • H03K4/50—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth voltage is produced across a capacitor
    • H03K4/54—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth voltage is produced across a capacitor using a single semiconductor device with positive feedback through a transformer, e.g. blocking oscillator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45394—Indexing scheme relating to differential amplifiers the AAC of the dif amp comprising FETs whose sources are not coupled, i.e. the AAC being a pseudo-differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45528—Indexing scheme relating to differential amplifiers the FBC comprising one or more passive resistors and being coupled between the LC and the IC
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45686—Indexing scheme relating to differential amplifiers the LC comprising one or more potentiometers, which are not shunting potentiometers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45702—Indexing scheme relating to differential amplifiers the LC comprising two resistors

Abstract

The small-current characteristics of the VMOS IGFET are used to provide a self-stabilised circuit having a principal use as an electrometer amplifier of wide dynamic range. A resistive impedance is connected between drain and a power supply terminal, and a DC feedback connection between drain and gate. For an amplifier the latter connection is a resistor RF, and the input current is applied to the gate and flows on through the resistor. With zero input current, the drain stays at a stable self- biased voltage of about 1.0 V with respect to source. An input current causes the drain voltage to change by the product of input current times feedback resistor, the gate remaining at about 1.0 V. The output is conveniently taken between the drains of two similarly connected VMOS's having their voltage by adjustment of the drain currents. Application of the FET with feedback to a timing circuit is also described. <IMAGE>
GB7829459A 1977-07-11 1978-07-11 Igfet circuits Expired GB2002980B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB7829459A GB2002980B (en) 1977-07-11 1978-07-11 Igfet circuits

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB2909377 1977-07-11
GB7829459A GB2002980B (en) 1977-07-11 1978-07-11 Igfet circuits

Publications (2)

Publication Number Publication Date
GB2002980A true GB2002980A (en) 1979-02-28
GB2002980B GB2002980B (en) 1982-01-13

Family

ID=26259739

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7829459A Expired GB2002980B (en) 1977-07-11 1978-07-11 Igfet circuits

Country Status (1)

Country Link
GB (1) GB2002980B (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986007215A1 (en) * 1985-05-28 1986-12-04 Wolfson Microelectronics Limited Improvements in or relating to transconductors
EP0448951A2 (en) * 1990-03-22 1991-10-02 STMicroelectronics S.r.l. Low-noise amplifier with high input impedance, particularly for microphones
WO2005119907A2 (en) * 2004-06-02 2005-12-15 Qualcomm Incorporated General-purpose wideband amplifier
EP1790073A1 (en) * 2004-09-15 2007-05-30 Siemens Energy & Automation, Inc. Photodiode amplifier
KR100876903B1 (en) * 2004-06-02 2009-01-07 콸콤 인코포레이티드 General?purpose wideband amplifier integrated circuit and device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986007215A1 (en) * 1985-05-28 1986-12-04 Wolfson Microelectronics Limited Improvements in or relating to transconductors
US4823092A (en) * 1985-05-28 1989-04-18 Wolfson Microelectronics Limited MOS transconductance amplifier for active filters
EP0448951A2 (en) * 1990-03-22 1991-10-02 STMicroelectronics S.r.l. Low-noise amplifier with high input impedance, particularly for microphones
EP0448951A3 (en) * 1990-03-22 1992-03-04 Sgs-Thomson Microelectronics S.R.L. Low-noise amplifier with high input impedance, particularly for microphones
US5489876A (en) * 1990-03-22 1996-02-06 Sgs-Thomson Microelectronics, S.R.L. Low-noise amplifier with high input impedance, particularly for microphones
WO2005119907A2 (en) * 2004-06-02 2005-12-15 Qualcomm Incorporated General-purpose wideband amplifier
WO2005119907A3 (en) * 2004-06-02 2006-03-30 Qualcomm Inc General-purpose wideband amplifier
KR100876903B1 (en) * 2004-06-02 2009-01-07 콸콤 인코포레이티드 General?purpose wideband amplifier integrated circuit and device
US7602246B2 (en) 2004-06-02 2009-10-13 Qualcomm, Incorporated General-purpose wideband amplifier
EP1790073A1 (en) * 2004-09-15 2007-05-30 Siemens Energy & Automation, Inc. Photodiode amplifier

Also Published As

Publication number Publication date
GB2002980B (en) 1982-01-13

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee