JPS57157606A - Fet amplifier - Google Patents
Fet amplifierInfo
- Publication number
- JPS57157606A JPS57157606A JP56043343A JP4334381A JPS57157606A JP S57157606 A JPS57157606 A JP S57157606A JP 56043343 A JP56043343 A JP 56043343A JP 4334381 A JP4334381 A JP 4334381A JP S57157606 A JPS57157606 A JP S57157606A
- Authority
- JP
- Japan
- Prior art keywords
- fet1
- gain
- temperature
- voltage vgs
- gate bias
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/306—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in junction-FET amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
PURPOSE:To carry out the temperature compensation of gain, by adding a thermistor to a gate bias circuit of an FET. CONSTITUTION:A series circuit of resistances RG1 and RG2 plus a thermistor (r) is used for a gate bias circuit of an FET1, and the potential at the joint between the RG1 and RG2 is applied to the gate of the FET1. The gain of the FET1 is decided by the gate bias voltage VGS and decreases with a rise of the temperature although the voltage VGS is constant. On the other hand, the resistance value of the thermister (r) decreases with the rise of the temperature. As a result, the voltage VGS lowers and acts to increase the gain of the FET1. Thus both functions offset each other to reduce the gain fluctuation to the temperature change. In such way, an amplifier having the stable characteristics can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56043343A JPS57157606A (en) | 1981-03-24 | 1981-03-24 | Fet amplifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56043343A JPS57157606A (en) | 1981-03-24 | 1981-03-24 | Fet amplifier |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57157606A true JPS57157606A (en) | 1982-09-29 |
Family
ID=12661192
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56043343A Pending JPS57157606A (en) | 1981-03-24 | 1981-03-24 | Fet amplifier |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57157606A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03206704A (en) * | 1990-01-08 | 1991-09-10 | Nec Corp | Mmic amplifier circuit |
EP0920124A2 (en) * | 1997-11-27 | 1999-06-02 | Nec Corporation | Compensatory circuit with gain character |
US6278313B1 (en) | 1997-11-27 | 2001-08-21 | Nec Corporation | Semiconductor circuit in which distortion caused by changes in ambient temperature is compensated |
US6906590B2 (en) | 2002-01-29 | 2005-06-14 | Nec Corporation | FET amplifier with temperature-compensating circuit |
-
1981
- 1981-03-24 JP JP56043343A patent/JPS57157606A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03206704A (en) * | 1990-01-08 | 1991-09-10 | Nec Corp | Mmic amplifier circuit |
EP0920124A2 (en) * | 1997-11-27 | 1999-06-02 | Nec Corporation | Compensatory circuit with gain character |
US6147557A (en) * | 1997-11-27 | 2000-11-14 | Nec Corporation | Semiconductor circuit compensating for changes in gain slope of the circuit's gain-frequency characteristic caused by ambient temperature changes |
US6278313B1 (en) | 1997-11-27 | 2001-08-21 | Nec Corporation | Semiconductor circuit in which distortion caused by changes in ambient temperature is compensated |
EP0920124A3 (en) * | 1997-11-27 | 2001-10-24 | Nec Corporation | Compensatory circuit with gain character |
US6437634B1 (en) | 1997-11-27 | 2002-08-20 | Nec Corporation | Semiconductor circuit in which distortion caused by change in ambient temperature is compensated |
US6906590B2 (en) | 2002-01-29 | 2005-06-14 | Nec Corporation | FET amplifier with temperature-compensating circuit |
DE10303055B4 (en) * | 2002-01-29 | 2009-04-02 | Nec Corp. | FET amplifier with temperature compensation circuit |
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