JPS57157606A - Fet amplifier - Google Patents

Fet amplifier

Info

Publication number
JPS57157606A
JPS57157606A JP56043343A JP4334381A JPS57157606A JP S57157606 A JPS57157606 A JP S57157606A JP 56043343 A JP56043343 A JP 56043343A JP 4334381 A JP4334381 A JP 4334381A JP S57157606 A JPS57157606 A JP S57157606A
Authority
JP
Japan
Prior art keywords
fet1
gain
temperature
voltage vgs
gate bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56043343A
Other languages
Japanese (ja)
Inventor
Eiji Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56043343A priority Critical patent/JPS57157606A/en
Publication of JPS57157606A publication Critical patent/JPS57157606A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/306Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in junction-FET amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To carry out the temperature compensation of gain, by adding a thermistor to a gate bias circuit of an FET. CONSTITUTION:A series circuit of resistances RG1 and RG2 plus a thermistor (r) is used for a gate bias circuit of an FET1, and the potential at the joint between the RG1 and RG2 is applied to the gate of the FET1. The gain of the FET1 is decided by the gate bias voltage VGS and decreases with a rise of the temperature although the voltage VGS is constant. On the other hand, the resistance value of the thermister (r) decreases with the rise of the temperature. As a result, the voltage VGS lowers and acts to increase the gain of the FET1. Thus both functions offset each other to reduce the gain fluctuation to the temperature change. In such way, an amplifier having the stable characteristics can be obtained.
JP56043343A 1981-03-24 1981-03-24 Fet amplifier Pending JPS57157606A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56043343A JPS57157606A (en) 1981-03-24 1981-03-24 Fet amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56043343A JPS57157606A (en) 1981-03-24 1981-03-24 Fet amplifier

Publications (1)

Publication Number Publication Date
JPS57157606A true JPS57157606A (en) 1982-09-29

Family

ID=12661192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56043343A Pending JPS57157606A (en) 1981-03-24 1981-03-24 Fet amplifier

Country Status (1)

Country Link
JP (1) JPS57157606A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03206704A (en) * 1990-01-08 1991-09-10 Nec Corp Mmic amplifier circuit
EP0920124A2 (en) * 1997-11-27 1999-06-02 Nec Corporation Compensatory circuit with gain character
US6278313B1 (en) 1997-11-27 2001-08-21 Nec Corporation Semiconductor circuit in which distortion caused by changes in ambient temperature is compensated
US6906590B2 (en) 2002-01-29 2005-06-14 Nec Corporation FET amplifier with temperature-compensating circuit

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03206704A (en) * 1990-01-08 1991-09-10 Nec Corp Mmic amplifier circuit
EP0920124A2 (en) * 1997-11-27 1999-06-02 Nec Corporation Compensatory circuit with gain character
US6147557A (en) * 1997-11-27 2000-11-14 Nec Corporation Semiconductor circuit compensating for changes in gain slope of the circuit's gain-frequency characteristic caused by ambient temperature changes
US6278313B1 (en) 1997-11-27 2001-08-21 Nec Corporation Semiconductor circuit in which distortion caused by changes in ambient temperature is compensated
EP0920124A3 (en) * 1997-11-27 2001-10-24 Nec Corporation Compensatory circuit with gain character
US6437634B1 (en) 1997-11-27 2002-08-20 Nec Corporation Semiconductor circuit in which distortion caused by change in ambient temperature is compensated
US6906590B2 (en) 2002-01-29 2005-06-14 Nec Corporation FET amplifier with temperature-compensating circuit
DE10303055B4 (en) * 2002-01-29 2009-04-02 Nec Corp. FET amplifier with temperature compensation circuit

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