GB1572819A - Semiconductor device - Google Patents

Semiconductor device Download PDF

Info

Publication number
GB1572819A
GB1572819A GB54126/76A GB5412676A GB1572819A GB 1572819 A GB1572819 A GB 1572819A GB 54126/76 A GB54126/76 A GB 54126/76A GB 5412676 A GB5412676 A GB 5412676A GB 1572819 A GB1572819 A GB 1572819A
Authority
GB
United Kingdom
Prior art keywords
film
semiconductor device
impurity
silicon carbide
arsenic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB54126/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP50153379A external-priority patent/JPS597214B2/ja
Priority claimed from JP2765076A external-priority patent/JPS52111378A/ja
Priority claimed from JP2765176A external-priority patent/JPS52111379A/ja
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB1572819A publication Critical patent/GB1572819A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/147—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being multilayered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6332—Deposition from the gas or vapour phase using thermal evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H10P14/6905—Inorganic materials containing silicon being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG

Landscapes

  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
GB54126/76A 1975-12-24 1976-12-24 Semiconductor device Expired GB1572819A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP50153379A JPS597214B2 (ja) 1975-12-24 1975-12-24 ハンドウタイソウチ
JP2765076A JPS52111378A (en) 1976-03-16 1976-03-16 Semi-conductor device
JP2765176A JPS52111379A (en) 1976-03-16 1976-03-16 Semi-conductor device

Publications (1)

Publication Number Publication Date
GB1572819A true GB1572819A (en) 1980-08-06

Family

ID=27285892

Family Applications (2)

Application Number Title Priority Date Filing Date
GB54126/76A Expired GB1572819A (en) 1975-12-24 1976-12-24 Semiconductor device
GB23196/79A Expired GB1572820A (en) 1975-12-24 1976-12-24 Semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB23196/79A Expired GB1572820A (en) 1975-12-24 1976-12-24 Semiconductor device

Country Status (5)

Country Link
US (1) US4224636A (https=)
DE (1) DE2658304C2 (https=)
FR (1) FR2336795A1 (https=)
GB (2) GB1572819A (https=)
NL (1) NL171944C (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900001267B1 (ko) * 1983-11-30 1990-03-05 후지쓰 가부시끼가이샤 Soi형 반도체 장치의 제조방법
FR2601801B1 (fr) * 1986-07-16 1988-09-16 Morin Francois Ecran d'affichage a matrice active utilisant du carbure de silicium amorphe hydrogene et procede de fabrication de cet ecran
JPS6347983A (ja) * 1986-08-18 1988-02-29 Sharp Corp 炭化珪素電界効果トランジスタ
US4789886A (en) * 1987-01-20 1988-12-06 General Instrument Corporation Method and apparatus for insulating high voltage semiconductor structures
US4757934A (en) * 1987-02-06 1988-07-19 Motorola, Inc. Low stress heat sinking for semiconductors
US5098494A (en) * 1989-05-23 1992-03-24 Mcnc Bonding of ceramic parts
US5818071A (en) * 1995-02-02 1998-10-06 Dow Corning Corporation Silicon carbide metal diffusion barrier layer

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL244520A (https=) * 1958-10-23
US2937324A (en) * 1959-02-05 1960-05-17 Westinghouse Electric Corp Silicon carbide rectifier
GB1104935A (en) * 1964-05-08 1968-03-06 Standard Telephones Cables Ltd Improvements in or relating to a method of forming a layer of an inorganic compound
GB1114798A (en) * 1965-08-09 1968-05-22 Westinghouse Electric Corp Integrated circuit device with dielectric isolation and method of making the same
US3400309A (en) * 1965-10-18 1968-09-03 Ibm Monolithic silicon device containing dielectrically isolatng film of silicon carbide
GB1143864A (https=) * 1966-01-15 1900-01-01
DE1614358C3 (de) * 1966-03-08 1974-08-22 Rca Corp., New York, N.Y. (V.St.A.) Verfahren zum Herstellen einer Ätzmaske für die Ätzbehandlung von Halbleiterkörpern
US3451867A (en) * 1966-05-31 1969-06-24 Gen Electric Processes of epitaxial deposition or diffusion employing a silicon carbide masking layer
US3465209A (en) * 1966-07-07 1969-09-02 Rca Corp Semiconductor devices and methods of manufacture thereof
FR1530218A (fr) * 1966-07-07 1968-06-21 Rca Corp Perfectionnements aux dispositifs semiconducteurs
GB1200078A (en) * 1966-09-12 1970-07-29 Hitachi Ltd A method of manufacturing a semiconductor device and a device obtained by this method
GB1141251A (en) * 1966-09-19 1969-01-29 Gen Electric Co Ltd Improvements in or relating to luminescent materials
US3469155A (en) * 1966-09-23 1969-09-23 Westinghouse Electric Corp Punch-through means integrated with mos type devices for protection against insulation layer breakdown
US3455020A (en) * 1966-10-13 1969-07-15 Rca Corp Method of fabricating insulated-gate field-effect devices
US3497773A (en) * 1967-02-20 1970-02-24 Westinghouse Electric Corp Passive circuit elements
GB1224803A (en) * 1967-03-01 1971-03-10 Sony Corp Semiconductor devices
GB1162565A (en) * 1967-04-07 1969-08-27 Ibm Uk Improvements in and relating to Semiconductor Structures
GB1182152A (en) * 1967-04-12 1970-02-25 Mark Slaffer Improved Telemetry System for Pistons and Like Reciprocating Members.
US3550256A (en) * 1967-12-21 1970-12-29 Fairchild Camera Instr Co Control of surface inversion of p- and n-type silicon using dense dielectrics
US3615941A (en) * 1968-05-07 1971-10-26 Hitachi Ltd Method for manufacturing semiconductor device with passivation film
DE1949174B2 (de) * 1968-10-02 1971-09-23 Halbleiterbauelement
US3967310A (en) * 1968-10-09 1976-06-29 Hitachi, Ltd. Semiconductor device having controlled surface charges by passivation films formed thereon
US3812519A (en) * 1970-02-07 1974-05-21 Tokyo Shibaura Electric Co Silicon double doped with p and as or b and as
GB1334520A (en) * 1970-06-12 1973-10-17 Atomic Energy Authority Uk Formation of electrically insulating layers in semiconducting materials
JPS4733548U (https=) * 1971-05-14 1972-12-14
JPS5131024Y2 (https=) * 1971-05-22 1976-08-04

Also Published As

Publication number Publication date
NL171944C (nl) 1983-06-01
FR2336795B1 (https=) 1982-01-08
FR2336795A1 (fr) 1977-07-22
DE2658304A1 (de) 1977-06-30
US4224636A (en) 1980-09-23
NL7614307A (nl) 1977-06-28
GB1572820A (en) 1980-08-06
DE2658304C2 (de) 1984-12-20

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PE20 Patent expired after termination of 20 years

Effective date: 19961223