GB1542227A - Amplifying gate thyristor with gate turnoff(gto) - Google Patents

Amplifying gate thyristor with gate turnoff(gto)

Info

Publication number
GB1542227A
GB1542227A GB78153A GB15378A GB1542227A GB 1542227 A GB1542227 A GB 1542227A GB 78153 A GB78153 A GB 78153A GB 15378 A GB15378 A GB 15378A GB 1542227 A GB1542227 A GB 1542227A
Authority
GB
United Kingdom
Prior art keywords
gate
gto
turnoff
amplifying
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB78153A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alstom SA
Original Assignee
Alsthom Atlantique SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alsthom Atlantique SA filed Critical Alsthom Atlantique SA
Publication of GB1542227A publication Critical patent/GB1542227A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors
GB78153A 1977-01-10 1978-01-04 Amplifying gate thyristor with gate turnoff(gto) Expired GB1542227A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7700471A FR2377095A1 (fr) 1977-01-10 1977-01-10 Thyristor a amplificateur de declenchement et a ouverture commandee par la gachette

Publications (1)

Publication Number Publication Date
GB1542227A true GB1542227A (en) 1979-03-14

Family

ID=9185269

Family Applications (1)

Application Number Title Priority Date Filing Date
GB78153A Expired GB1542227A (en) 1977-01-10 1978-01-04 Amplifying gate thyristor with gate turnoff(gto)

Country Status (5)

Country Link
US (1) US4177478A (en, 2012)
BE (1) BE862498A (en, 2012)
DE (1) DE2800172C2 (en, 2012)
FR (1) FR2377095A1 (en, 2012)
GB (1) GB1542227A (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2125619A (en) * 1982-08-05 1984-03-07 Meidensha Electric Mfg Co Ltd Gate turn-off thyristor

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2825794C2 (de) * 1978-06-13 1986-03-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Abschaltbarer Thyristor
JPS607394B2 (ja) * 1978-08-18 1985-02-23 株式会社明電舎 半導体制御素子
DE3005458A1 (de) * 1980-01-16 1981-07-23 BBC AG Brown, Boveri & Cie., Baden, Aargau Thyristor zum verlustarmen schalten kurzer impulse
JPS57201077A (en) * 1981-06-05 1982-12-09 Hitachi Ltd Semiconductor switching device
JPS5871657A (ja) * 1981-10-23 1983-04-28 Toshiba Corp ゲ−トタ−ンオフサイリスタ
US4595939A (en) * 1982-11-15 1986-06-17 Tokyo Shibaura Denki Kabushiki Kaisha Radiation-controllable thyristor with multiple, non-concentric amplified stages
DE3435548A1 (de) * 1984-09-27 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hoher innerer zuendverstaerkung
EP0190585A1 (de) * 1985-02-01 1986-08-13 Siemens Aktiengesellschaft Abschaltbares Halbleiterbauelement
JPH0691245B2 (ja) * 1985-06-26 1994-11-14 株式会社日立製作所 ゲ−トタ−ンオフサイリスタ
JPS62177968A (ja) * 1986-01-31 1987-08-04 Hitachi Ltd ゲ−トタ−ンオフサイリスタ
US4717940A (en) * 1986-03-11 1988-01-05 Kabushiki Kaisha Toshiba MIS controlled gate turn-off thyristor
EP0283788A1 (de) * 1987-03-09 1988-09-28 Siemens Aktiengesellschaft Abschaltbares Leistungshalbleiterbauelement
CN1056248C (zh) * 1992-09-12 2000-09-06 朱文有 一种静电感应晶闸管的制造方法及其器件
FR2708811B1 (fr) * 1993-08-06 1995-10-20 Sgs Thomson Microelectronics Thyristor à amplification de gachette à courant de maintien accru.
WO1997044827A1 (de) * 1996-05-20 1997-11-27 Siemens Aktiengesellschaft Thyristor mit integriertem du/dt-schutz

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1803935A1 (de) * 1967-10-20 1969-10-02 Ckd Praha Mehrschichtiges Halbleiterbauelement mit zumindest vier pn-UEbergaengen
US3641403A (en) * 1970-05-25 1972-02-08 Mitsubishi Electric Corp Thyristor with degenerate semiconductive region
GB1303337A (en, 2012) * 1970-10-06 1973-01-17
US3906545A (en) * 1972-01-24 1975-09-16 Licentia Gmbh Thyristor structure
DE2241217C3 (de) * 1972-08-22 1978-07-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristor mit erhöhter Ein- und Durchschaltgeschwindigkeit
US3896476A (en) * 1973-05-02 1975-07-22 Mitsubishi Electric Corp Semiconductor switching device
JPS5718347B2 (en, 2012) * 1974-01-07 1982-04-16
FR2299727A1 (fr) * 1975-01-28 1976-08-27 Alsthom Cgee Thyristor a caracteristiques de commutation ameliorees

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2125619A (en) * 1982-08-05 1984-03-07 Meidensha Electric Mfg Co Ltd Gate turn-off thyristor
US4574296A (en) * 1982-08-05 1986-03-04 Kabushiki Kaisha Meidensha Gate turn-off thyristor with a cathode base layer having four distinct impurity concentrations

Also Published As

Publication number Publication date
FR2377095A1 (fr) 1978-08-04
DE2800172A1 (de) 1978-07-13
BE862498A (fr) 1978-06-30
DE2800172C2 (de) 1983-05-26
FR2377095B1 (en, 2012) 1980-02-29
US4177478A (en) 1979-12-04

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19980103