GB1303337A - - Google Patents

Info

Publication number
GB1303337A
GB1303337A GB4743070A GB1303337DA GB1303337A GB 1303337 A GB1303337 A GB 1303337A GB 4743070 A GB4743070 A GB 4743070A GB 1303337D A GB1303337D A GB 1303337DA GB 1303337 A GB1303337 A GB 1303337A
Authority
GB
United Kingdom
Prior art keywords
region
diode
transistor
thyristor
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4743070A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1303337A publication Critical patent/GB1303337A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Thyristors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
GB4743070A 1970-10-06 1970-10-06 Expired GB1303337A (en, 2012)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4743070 1970-10-06

Publications (1)

Publication Number Publication Date
GB1303337A true GB1303337A (en, 2012) 1973-01-17

Family

ID=10444942

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4743070A Expired GB1303337A (en, 2012) 1970-10-06 1970-10-06

Country Status (7)

Country Link
US (1) US3693054A (en, 2012)
JP (1) JPS5431352B1 (en, 2012)
CA (1) CA923627A (en, 2012)
DE (1) DE2149039C2 (en, 2012)
FR (1) FR2110239B1 (en, 2012)
GB (1) GB1303337A (en, 2012)
SE (1) SE375189B (en, 2012)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961354A (en) * 1972-11-17 1976-06-01 Matsushita Electronics Corporation Mesa type thyristor and its making method
US4629944A (en) * 1983-03-03 1986-12-16 Texas Instruments Incorporated Starter circuit for a fluorescent tube lamp
GB2261321A (en) * 1991-11-06 1993-05-12 Motorola Inc Power semiconductor device with temperature sensor

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3990092A (en) * 1974-01-11 1976-11-02 Hitachi, Ltd. Resistance element for semiconductor integrated circuit
JPS5232686A (en) * 1975-09-09 1977-03-12 Origin Electric Co Ltd Semiconductor composite device
FR2377095A1 (fr) * 1977-01-10 1978-08-04 Alsthom Atlantique Thyristor a amplificateur de declenchement et a ouverture commandee par la gachette
US4156248A (en) * 1977-01-31 1979-05-22 Rca Corporation Gate turn-off semiconductor controlled rectifier device with highly doped buffer region portion
DE2855546A1 (de) * 1977-12-23 1979-07-05 Gen Electric Verfahren zum herstellen feldgesteuerter thyristoren
JPS5933272B2 (ja) * 1978-06-19 1984-08-14 株式会社日立製作所 半導体装置
US4623910A (en) 1982-09-24 1986-11-18 Risberg Robert L Semiconductor device
US4673844A (en) * 1985-09-30 1987-06-16 Texas Instruments Incorporated Starter circuit for a fluorescent tube lamp

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3176147A (en) * 1959-11-17 1965-03-30 Ibm Parallel connected two-terminal semiconductor devices of different negative resistance characteristics
DE1464960A1 (de) * 1963-09-03 1969-08-28 Gen Electric Halbleiter-Schalter
US3584270A (en) * 1968-03-13 1971-06-08 Westinghouse Electric Corp High speed switching rectifier
US3590339A (en) * 1970-01-30 1971-06-29 Westinghouse Electric Corp Gate controlled switch transistor drive integrated circuit (thytran)
US3622841A (en) * 1970-04-16 1971-11-23 Motorola Inc Triac having increased commutating speed

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961354A (en) * 1972-11-17 1976-06-01 Matsushita Electronics Corporation Mesa type thyristor and its making method
US4629944A (en) * 1983-03-03 1986-12-16 Texas Instruments Incorporated Starter circuit for a fluorescent tube lamp
GB2261321A (en) * 1991-11-06 1993-05-12 Motorola Inc Power semiconductor device with temperature sensor
GB2261321B (en) * 1991-11-06 1995-10-11 Motorola Inc Power semiconductor device with temperature sensor

Also Published As

Publication number Publication date
US3693054A (en) 1972-09-19
DE2149039A1 (de) 1972-04-13
SE375189B (en, 2012) 1975-04-07
FR2110239A1 (en, 2012) 1972-06-02
FR2110239B1 (en, 2012) 1977-04-22
JPS5431352B1 (en, 2012) 1979-10-06
CA923627A (en) 1973-03-27
DE2149039C2 (de) 1982-10-28

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee