ES390673A1 - Un dispositivo tiristor-rectificador integral. - Google Patents

Un dispositivo tiristor-rectificador integral.

Info

Publication number
ES390673A1
ES390673A1 ES390673A ES390673A ES390673A1 ES 390673 A1 ES390673 A1 ES 390673A1 ES 390673 A ES390673 A ES 390673A ES 390673 A ES390673 A ES 390673A ES 390673 A1 ES390673 A1 ES 390673A1
Authority
ES
Spain
Prior art keywords
scr
diode
rectifier
portions
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES390673A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of ES390673A1 publication Critical patent/ES390673A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Rectifiers (AREA)
ES390673A 1970-05-05 1971-04-28 Un dispositivo tiristor-rectificador integral. Expired ES390673A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3482070A 1970-05-05 1970-05-05

Publications (1)

Publication Number Publication Date
ES390673A1 true ES390673A1 (es) 1974-09-16

Family

ID=21878818

Family Applications (1)

Application Number Title Priority Date Filing Date
ES390673A Expired ES390673A1 (es) 1970-05-05 1971-04-28 Un dispositivo tiristor-rectificador integral.

Country Status (12)

Country Link
US (1) US3727116A (es)
JP (1) JPS5438475B1 (es)
BE (1) BE766708A (es)
DE (1) DE2121086C3 (es)
ES (1) ES390673A1 (es)
FR (1) FR2088344B1 (es)
GB (1) GB1330911A (es)
MY (1) MY7400235A (es)
NL (1) NL7106064A (es)
SE (1) SE369125B (es)
YU (1) YU36317B (es)
ZA (1) ZA712839B (es)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3978514A (en) * 1969-07-18 1976-08-31 Hitachi, Ltd. Diode-integrated high speed thyristor
US4009059A (en) * 1972-01-08 1977-02-22 Mitsubishi Denki Kabushiki Kaisha Reverse conducting thyristor and process for producing the same
JPS4918279A (es) * 1972-06-08 1974-02-18
JPS5342234B2 (es) * 1973-02-12 1978-11-09
US3988768A (en) * 1973-10-30 1976-10-26 General Electric Company Deep diode silicon controlled rectifier
FR2270676B1 (es) * 1974-02-22 1976-12-03 Thomson Csf
US3988771A (en) * 1974-05-28 1976-10-26 General Electric Company Spatial control of lifetime in semiconductor device
US4031607A (en) * 1974-05-28 1977-06-28 General Electric Company Minority carrier isolation barriers for semiconductor devices
US3988762A (en) * 1974-05-28 1976-10-26 General Electric Company Minority carrier isolation barriers for semiconductor devices
US3988772A (en) * 1974-05-28 1976-10-26 General Electric Company Current isolation means for integrated power devices
GB1499203A (en) * 1975-02-04 1978-01-25 Standard Telephones Cables Ltd Thyristor structure to facilitate zero point switching
US4053924A (en) * 1975-02-07 1977-10-11 California Linear Circuits, Inc. Ion-implanted semiconductor abrupt junction
US4032364A (en) * 1975-02-28 1977-06-28 General Electric Company Deep diode silicon controlled rectifier
US4035670A (en) * 1975-12-24 1977-07-12 California Linear Circuits, Inc. Transistor stored charge control using a recombination layer diode
CH594989A5 (es) * 1976-09-03 1978-01-31 Bbc Brown Boveri & Cie
US4117505A (en) * 1976-11-19 1978-09-26 Mitsubishi Denki Kabushiki Kaisha Thyristor with heat sensitive switching characteristics
DE2805813C3 (de) * 1978-02-11 1984-02-23 Semikron Gesellschaft Fuer Gleichrichterbau U. Elektronik Mbh, 8500 Nuernberg l.PT 23.02.84 Halbleiteranordnung SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg, DE
JPS54111790A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Semiconductor switchgear
JPS5933272B2 (ja) * 1978-06-19 1984-08-14 株式会社日立製作所 半導体装置
US4782379A (en) * 1981-11-23 1988-11-01 General Electric Company Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
FR2524715A1 (fr) * 1982-03-30 1983-10-07 Thomson Csf Diode rapide
WO2004105089A2 (en) * 2003-05-15 2004-12-02 Pan Jit Americas, Inc. Low capacitance over-voltage protection thyristor device
US9385196B2 (en) * 2012-09-12 2016-07-05 Texas Instruments Incorporated Fast switching IGBT with embedded emitter shorting contacts and method for making same
CN109698234B (zh) * 2017-10-23 2021-05-11 株洲中车时代半导体有限公司 晶闸管及其制造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3476993A (en) * 1959-09-08 1969-11-04 Gen Electric Five layer and junction bridging terminal switching device
US3117260A (en) * 1959-09-11 1964-01-07 Fairchild Camera Instr Co Semiconductor circuit complexes
US3261985A (en) * 1962-12-21 1966-07-19 Gen Electric Cross-current turn-off silicon controlled rectifier
US3284639A (en) * 1963-02-19 1966-11-08 Westinghouse Electric Corp Semiconductor switch device of controlled rectifier type responsive to approximately equal gate signals of either polarity
GB1030050A (en) * 1963-11-13 1966-05-18 Motorola Inc Punchthrough breakdown rectifier
FR1483998A (es) * 1965-05-14 1967-09-13
US3440113A (en) * 1966-09-19 1969-04-22 Westinghouse Electric Corp Process for diffusing gold into semiconductor material
US3440114A (en) * 1966-10-31 1969-04-22 Texas Instruments Inc Selective gold doping for high resistivity regions in silicon
US3486950A (en) * 1967-04-26 1969-12-30 Motorola Inc Localized control of carrier lifetimes in p-n junction devices and integrated circuits
CA845885A (en) * 1967-08-21 1970-06-30 E. Burke Donald Semiconductor switching device
US3584270A (en) * 1968-03-13 1971-06-08 Westinghouse Electric Corp High speed switching rectifier
GB1214180A (en) * 1968-08-30 1970-12-02 Westinghouse Brake & Signal Semiconductor devices

Also Published As

Publication number Publication date
US3727116A (en) 1973-04-10
SE369125B (es) 1974-08-05
MY7400235A (en) 1974-12-31
ZA712839B (en) 1972-01-26
BE766708A (fr) 1971-10-01
FR2088344B1 (es) 1976-12-03
YU36317B (en) 1982-06-18
FR2088344A1 (es) 1972-01-07
GB1330911A (en) 1973-09-19
DE2121086B2 (es) 1979-03-22
DE2121086A1 (de) 1971-11-18
DE2121086C3 (de) 1985-02-21
JPS5438475B1 (es) 1979-11-21
YU107971A (en) 1981-08-31
NL7106064A (es) 1971-11-09

Similar Documents

Publication Publication Date Title
ES390673A1 (es) Un dispositivo tiristor-rectificador integral.
GB1365714A (en) Thyristor power switching circuits
GB1480402A (en) Filament-type semiconductor switch device
GB1304728A (es)
GB1156997A (en) Improvements in and relating to Controllable Semi-Conductor Devices
GB1301192A (en) Semiconductor controlled rectifier device
GB935710A (en) Improvements in controlled semiconductor rectifiers
GB1251088A (es)
GB949646A (en) Improvements in or relating to semiconductor devices
GB1311446A (en) Semiconductor devices
GB1303337A (es)
GB983266A (en) Semiconductor switching devices
GB1088776A (en) Semiconductor controlled rectifier having a shorted emitter
GB969592A (en) A semi-conductor device
GB1304741A (es)
GB917645A (en) Improvements in or relating to semiconductor devices
GB1366845A (en) Integrated thyristor semiconductor arrangements
GB1475320A (en) Semiconductor devices
GB1303338A (es)
GB1377420A (en) Thyristors
JPS5346290A (en) Semiconductor device
GB1030670A (en) Semiconductor devices
GB1256161A (en) Improvements relating to four-layer semi-conductor devices
GB1331411A (en) Semiconductor components
SE7413032L (es)