YU36317B - Integral thyristor-rectifier device - Google Patents

Integral thyristor-rectifier device

Info

Publication number
YU36317B
YU36317B YU1079/71A YU107971A YU36317B YU 36317 B YU36317 B YU 36317B YU 1079/71 A YU1079/71 A YU 1079/71A YU 107971 A YU107971 A YU 107971A YU 36317 B YU36317 B YU 36317B
Authority
YU
Yugoslavia
Prior art keywords
thyristor
integral
rectifier device
rectifier
integral thyristor
Prior art date
Application number
YU1079/71A
Other languages
English (en)
Other versions
YU107971A (en
Inventor
Thomas Albert William
Albert William Thomas
Neilson John Manning Savidge
John Manning Savidge Neilson
Greenberg Leon Stanley
Leon Stanley Greenberg
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of YU107971A publication Critical patent/YU107971A/xx
Publication of YU36317B publication Critical patent/YU36317B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Rectifiers (AREA)
YU1079/71A 1970-05-05 1971-04-29 Integral thyristor-rectifier device YU36317B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3482070A 1970-05-05 1970-05-05

Publications (2)

Publication Number Publication Date
YU107971A YU107971A (en) 1981-08-31
YU36317B true YU36317B (en) 1982-06-18

Family

ID=21878818

Family Applications (1)

Application Number Title Priority Date Filing Date
YU1079/71A YU36317B (en) 1970-05-05 1971-04-29 Integral thyristor-rectifier device

Country Status (12)

Country Link
US (1) US3727116A (xx)
JP (1) JPS5438475B1 (xx)
BE (1) BE766708A (xx)
DE (1) DE2121086C3 (xx)
ES (1) ES390673A1 (xx)
FR (1) FR2088344B1 (xx)
GB (1) GB1330911A (xx)
MY (1) MY7400235A (xx)
NL (1) NL7106064A (xx)
SE (1) SE369125B (xx)
YU (1) YU36317B (xx)
ZA (1) ZA712839B (xx)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3978514A (en) * 1969-07-18 1976-08-31 Hitachi, Ltd. Diode-integrated high speed thyristor
US4009059A (en) * 1972-01-08 1977-02-22 Mitsubishi Denki Kabushiki Kaisha Reverse conducting thyristor and process for producing the same
JPS4918279A (xx) * 1972-06-08 1974-02-18
JPS5342234B2 (xx) * 1973-02-12 1978-11-09
US3988768A (en) * 1973-10-30 1976-10-26 General Electric Company Deep diode silicon controlled rectifier
FR2270676B1 (xx) * 1974-02-22 1976-12-03 Thomson Csf
US3988771A (en) * 1974-05-28 1976-10-26 General Electric Company Spatial control of lifetime in semiconductor device
US4031607A (en) * 1974-05-28 1977-06-28 General Electric Company Minority carrier isolation barriers for semiconductor devices
US3988772A (en) * 1974-05-28 1976-10-26 General Electric Company Current isolation means for integrated power devices
US3988762A (en) * 1974-05-28 1976-10-26 General Electric Company Minority carrier isolation barriers for semiconductor devices
GB1499203A (en) * 1975-02-04 1978-01-25 Standard Telephones Cables Ltd Thyristor structure to facilitate zero point switching
US4053924A (en) * 1975-02-07 1977-10-11 California Linear Circuits, Inc. Ion-implanted semiconductor abrupt junction
US4032364A (en) * 1975-02-28 1977-06-28 General Electric Company Deep diode silicon controlled rectifier
US4035670A (en) * 1975-12-24 1977-07-12 California Linear Circuits, Inc. Transistor stored charge control using a recombination layer diode
CH594989A5 (xx) * 1976-09-03 1978-01-31 Bbc Brown Boveri & Cie
US4117505A (en) * 1976-11-19 1978-09-26 Mitsubishi Denki Kabushiki Kaisha Thyristor with heat sensitive switching characteristics
DE2805813C3 (de) * 1978-02-11 1984-02-23 Semikron Gesellschaft Fuer Gleichrichterbau U. Elektronik Mbh, 8500 Nuernberg l.PT 23.02.84 Halbleiteranordnung SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg, DE
JPS54111790A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Semiconductor switchgear
JPS5933272B2 (ja) * 1978-06-19 1984-08-14 株式会社日立製作所 半導体装置
US4782379A (en) * 1981-11-23 1988-11-01 General Electric Company Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
FR2524715A1 (fr) * 1982-03-30 1983-10-07 Thomson Csf Diode rapide
WO2004105089A2 (en) * 2003-05-15 2004-12-02 Pan Jit Americas, Inc. Low capacitance over-voltage protection thyristor device
US9385196B2 (en) * 2012-09-12 2016-07-05 Texas Instruments Incorporated Fast switching IGBT with embedded emitter shorting contacts and method for making same
CN109698234B (zh) * 2017-10-23 2021-05-11 株洲中车时代半导体有限公司 晶闸管及其制造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3476993A (en) * 1959-09-08 1969-11-04 Gen Electric Five layer and junction bridging terminal switching device
US3117260A (en) * 1959-09-11 1964-01-07 Fairchild Camera Instr Co Semiconductor circuit complexes
US3261985A (en) * 1962-12-21 1966-07-19 Gen Electric Cross-current turn-off silicon controlled rectifier
US3284639A (en) * 1963-02-19 1966-11-08 Westinghouse Electric Corp Semiconductor switch device of controlled rectifier type responsive to approximately equal gate signals of either polarity
GB1030050A (en) * 1963-11-13 1966-05-18 Motorola Inc Punchthrough breakdown rectifier
FR1483998A (xx) * 1965-05-14 1967-09-13
US3440113A (en) * 1966-09-19 1969-04-22 Westinghouse Electric Corp Process for diffusing gold into semiconductor material
US3440114A (en) * 1966-10-31 1969-04-22 Texas Instruments Inc Selective gold doping for high resistivity regions in silicon
US3486950A (en) * 1967-04-26 1969-12-30 Motorola Inc Localized control of carrier lifetimes in p-n junction devices and integrated circuits
CA845885A (en) * 1967-08-21 1970-06-30 E. Burke Donald Semiconductor switching device
US3584270A (en) * 1968-03-13 1971-06-08 Westinghouse Electric Corp High speed switching rectifier
GB1214180A (en) * 1968-08-30 1970-12-02 Westinghouse Brake & Signal Semiconductor devices

Also Published As

Publication number Publication date
DE2121086A1 (de) 1971-11-18
YU107971A (en) 1981-08-31
NL7106064A (xx) 1971-11-09
JPS5438475B1 (xx) 1979-11-21
ZA712839B (en) 1972-01-26
ES390673A1 (es) 1974-09-16
GB1330911A (en) 1973-09-19
MY7400235A (en) 1974-12-31
BE766708A (fr) 1971-10-01
DE2121086C3 (de) 1985-02-21
DE2121086B2 (xx) 1979-03-22
FR2088344B1 (xx) 1976-12-03
FR2088344A1 (xx) 1972-01-07
US3727116A (en) 1973-04-10
SE369125B (xx) 1974-08-05

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