GB1214180A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1214180A
GB1214180A GB4144068A GB4144068A GB1214180A GB 1214180 A GB1214180 A GB 1214180A GB 4144068 A GB4144068 A GB 4144068A GB 4144068 A GB4144068 A GB 4144068A GB 1214180 A GB1214180 A GB 1214180A
Authority
GB
United Kingdom
Prior art keywords
regions
region
wall
semi
semiconductor devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4144068A
Inventor
Neil Stuart Purdom
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Priority to GB4144068A priority Critical patent/GB1214180A/en
Priority to DE19691943537 priority patent/DE1943537A1/en
Publication of GB1214180A publication Critical patent/GB1214180A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Thyristors (AREA)

Abstract

1,214,180. Semi-conductor devices. WESTINGHOUSE BRAKE & SIGNAL CO. Ltd. 23 July, 1969 [30 Aug., 1968], No. 41440/68. Heading H1K. A semi-conductor diac, having 5 regions 1, 2, 3, 4, 5 of alternate type of conductivity, has positioned between the part comprising regions 1, 2, 3, 4 and the part comprising regions 2, 3, 4, 5 a wall region 6 doped with a deep level impurity such as gold. The exact configuration of the wall differs in the various embodiments, being either a single wall 6 extending through all the regions of the device, or only through regions 1, 2, 3 and into region 4, Fig. 4, not shown, or a wall in two parts, the first part extending through regions 1 and 2 into region 3 and the second part through regions 4 and 5 into region 3, (Fig. 3, not shown).
GB4144068A 1968-08-30 1968-08-30 Semiconductor devices Expired GB1214180A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB4144068A GB1214180A (en) 1968-08-30 1968-08-30 Semiconductor devices
DE19691943537 DE1943537A1 (en) 1968-08-30 1969-08-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4144068A GB1214180A (en) 1968-08-30 1968-08-30 Semiconductor devices

Publications (1)

Publication Number Publication Date
GB1214180A true GB1214180A (en) 1970-12-02

Family

ID=10419696

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4144068A Expired GB1214180A (en) 1968-08-30 1968-08-30 Semiconductor devices

Country Status (2)

Country Link
DE (1) DE1943537A1 (en)
GB (1) GB1214180A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3978514A (en) * 1969-07-18 1976-08-31 Hitachi, Ltd. Diode-integrated high speed thyristor
US3727116A (en) * 1970-05-05 1973-04-10 Rca Corp Integral thyristor-rectifier device
US3988771A (en) * 1974-05-28 1976-10-26 General Electric Company Spatial control of lifetime in semiconductor device
FR2462022A1 (en) * 1979-07-24 1981-02-06 Silicium Semiconducteur Ssc Thyristor or triac mfr. process - includes diffusion of gold through windows in glass layer deposited over semiconductor

Also Published As

Publication number Publication date
DE1943537A1 (en) 1970-03-05

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Legal Events

Date Code Title Description
PS Patent sealed
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PCNP Patent ceased through non-payment of renewal fee