BE766708A - Dispositifs semi-conducteurs de commutation - Google Patents
Dispositifs semi-conducteurs de commutationInfo
- Publication number
- BE766708A BE766708A BE766708A BE766708A BE766708A BE 766708 A BE766708 A BE 766708A BE 766708 A BE766708 A BE 766708A BE 766708 A BE766708 A BE 766708A BE 766708 A BE766708 A BE 766708A
- Authority
- BE
- Belgium
- Prior art keywords
- switching devices
- semiconductor switching
- semiconductor
- devices
- switching
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
- H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Rectifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US3482070A | 1970-05-05 | 1970-05-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE766708A true BE766708A (fr) | 1971-10-01 |
Family
ID=21878818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE766708A BE766708A (fr) | 1970-05-05 | 1971-05-04 | Dispositifs semi-conducteurs de commutation |
Country Status (12)
Country | Link |
---|---|
US (1) | US3727116A (fr) |
JP (1) | JPS5438475B1 (fr) |
BE (1) | BE766708A (fr) |
DE (1) | DE2121086C3 (fr) |
ES (1) | ES390673A1 (fr) |
FR (1) | FR2088344B1 (fr) |
GB (1) | GB1330911A (fr) |
MY (1) | MY7400235A (fr) |
NL (1) | NL7106064A (fr) |
SE (1) | SE369125B (fr) |
YU (1) | YU36317B (fr) |
ZA (1) | ZA712839B (fr) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3978514A (en) * | 1969-07-18 | 1976-08-31 | Hitachi, Ltd. | Diode-integrated high speed thyristor |
US4009059A (en) * | 1972-01-08 | 1977-02-22 | Mitsubishi Denki Kabushiki Kaisha | Reverse conducting thyristor and process for producing the same |
JPS4918279A (fr) * | 1972-06-08 | 1974-02-18 | ||
JPS5342234B2 (fr) * | 1973-02-12 | 1978-11-09 | ||
US3988768A (en) * | 1973-10-30 | 1976-10-26 | General Electric Company | Deep diode silicon controlled rectifier |
FR2270676B1 (fr) * | 1974-02-22 | 1976-12-03 | Thomson Csf | |
US3988771A (en) * | 1974-05-28 | 1976-10-26 | General Electric Company | Spatial control of lifetime in semiconductor device |
US3988772A (en) * | 1974-05-28 | 1976-10-26 | General Electric Company | Current isolation means for integrated power devices |
US3988762A (en) * | 1974-05-28 | 1976-10-26 | General Electric Company | Minority carrier isolation barriers for semiconductor devices |
US4031607A (en) * | 1974-05-28 | 1977-06-28 | General Electric Company | Minority carrier isolation barriers for semiconductor devices |
GB1499203A (en) * | 1975-02-04 | 1978-01-25 | Standard Telephones Cables Ltd | Thyristor structure to facilitate zero point switching |
US4053924A (en) * | 1975-02-07 | 1977-10-11 | California Linear Circuits, Inc. | Ion-implanted semiconductor abrupt junction |
US4032364A (en) * | 1975-02-28 | 1977-06-28 | General Electric Company | Deep diode silicon controlled rectifier |
US4035670A (en) * | 1975-12-24 | 1977-07-12 | California Linear Circuits, Inc. | Transistor stored charge control using a recombination layer diode |
CH594989A5 (fr) * | 1976-09-03 | 1978-01-31 | Bbc Brown Boveri & Cie | |
US4117505A (en) * | 1976-11-19 | 1978-09-26 | Mitsubishi Denki Kabushiki Kaisha | Thyristor with heat sensitive switching characteristics |
DE2805813C3 (de) * | 1978-02-11 | 1984-02-23 | Semikron Gesellschaft Fuer Gleichrichterbau U. Elektronik Mbh, 8500 Nuernberg | l.PT 23.02.84 Halbleiteranordnung SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg, DE |
JPS54111790A (en) * | 1978-02-22 | 1979-09-01 | Hitachi Ltd | Semiconductor switchgear |
JPS5933272B2 (ja) * | 1978-06-19 | 1984-08-14 | 株式会社日立製作所 | 半導体装置 |
US4782379A (en) * | 1981-11-23 | 1988-11-01 | General Electric Company | Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device |
FR2524715A1 (fr) * | 1982-03-30 | 1983-10-07 | Thomson Csf | Diode rapide |
WO2004105089A2 (fr) * | 2003-05-15 | 2004-12-02 | Pan Jit Americas, Inc. | Dispositif thyristor de protection contre les surtensions a faible capacite |
US9385196B2 (en) * | 2012-09-12 | 2016-07-05 | Texas Instruments Incorporated | Fast switching IGBT with embedded emitter shorting contacts and method for making same |
CN109698234B (zh) * | 2017-10-23 | 2021-05-11 | 株洲中车时代半导体有限公司 | 晶闸管及其制造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3476993A (en) * | 1959-09-08 | 1969-11-04 | Gen Electric | Five layer and junction bridging terminal switching device |
US3117260A (en) * | 1959-09-11 | 1964-01-07 | Fairchild Camera Instr Co | Semiconductor circuit complexes |
US3261985A (en) * | 1962-12-21 | 1966-07-19 | Gen Electric | Cross-current turn-off silicon controlled rectifier |
US3284639A (en) * | 1963-02-19 | 1966-11-08 | Westinghouse Electric Corp | Semiconductor switch device of controlled rectifier type responsive to approximately equal gate signals of either polarity |
GB1030050A (en) * | 1963-11-13 | 1966-05-18 | Motorola Inc | Punchthrough breakdown rectifier |
FR1483998A (fr) * | 1965-05-14 | 1967-09-13 | ||
US3440113A (en) * | 1966-09-19 | 1969-04-22 | Westinghouse Electric Corp | Process for diffusing gold into semiconductor material |
US3440114A (en) * | 1966-10-31 | 1969-04-22 | Texas Instruments Inc | Selective gold doping for high resistivity regions in silicon |
US3486950A (en) * | 1967-04-26 | 1969-12-30 | Motorola Inc | Localized control of carrier lifetimes in p-n junction devices and integrated circuits |
CA845885A (en) * | 1967-08-21 | 1970-06-30 | E. Burke Donald | Semiconductor switching device |
US3584270A (en) * | 1968-03-13 | 1971-06-08 | Westinghouse Electric Corp | High speed switching rectifier |
GB1214180A (en) * | 1968-08-30 | 1970-12-02 | Westinghouse Brake & Signal | Semiconductor devices |
-
1970
- 1970-05-05 US US00034820A patent/US3727116A/en not_active Expired - Lifetime
- 1970-12-22 JP JP11735770A patent/JPS5438475B1/ja active Pending
-
1971
- 1971-04-22 SE SE05234/71A patent/SE369125B/xx unknown
- 1971-04-28 GB GB1181171*[A patent/GB1330911A/en not_active Expired
- 1971-04-28 ES ES390673A patent/ES390673A1/es not_active Expired
- 1971-04-29 DE DE2121086A patent/DE2121086C3/de not_active Expired
- 1971-04-29 YU YU1079/71A patent/YU36317B/xx unknown
- 1971-05-03 FR FR7115764A patent/FR2088344B1/fr not_active Expired
- 1971-05-03 ZA ZA712839A patent/ZA712839B/xx unknown
- 1971-05-04 BE BE766708A patent/BE766708A/fr unknown
- 1971-05-04 NL NL7106064A patent/NL7106064A/xx not_active Application Discontinuation
-
1974
- 1974-12-30 MY MY235/74A patent/MY7400235A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
JPS5438475B1 (fr) | 1979-11-21 |
FR2088344A1 (fr) | 1972-01-07 |
GB1330911A (en) | 1973-09-19 |
SE369125B (fr) | 1974-08-05 |
DE2121086A1 (de) | 1971-11-18 |
ZA712839B (en) | 1972-01-26 |
MY7400235A (en) | 1974-12-31 |
DE2121086C3 (de) | 1985-02-21 |
NL7106064A (fr) | 1971-11-09 |
ES390673A1 (es) | 1974-09-16 |
US3727116A (en) | 1973-04-10 |
FR2088344B1 (fr) | 1976-12-03 |
DE2121086B2 (fr) | 1979-03-22 |
YU107971A (en) | 1981-08-31 |
YU36317B (en) | 1982-06-18 |
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