FR1415025A - Perfectionnements aux dispositifs semiconducteurs de commutation - Google Patents
Perfectionnements aux dispositifs semiconducteurs de commutationInfo
- Publication number
- FR1415025A FR1415025A FR991694A FR991694A FR1415025A FR 1415025 A FR1415025 A FR 1415025A FR 991694 A FR991694 A FR 991694A FR 991694 A FR991694 A FR 991694A FR 1415025 A FR1415025 A FR 1415025A
- Authority
- FR
- France
- Prior art keywords
- switching devices
- semiconductor switching
- advanced semiconductor
- advanced
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US317323A US3331000A (en) | 1963-10-18 | 1963-10-18 | Gate turn off semiconductor switch having a composite gate region with different impurity concentrations |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1415025A true FR1415025A (fr) | 1965-10-22 |
Family
ID=23233148
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR991694A Expired FR1415025A (fr) | 1963-10-18 | 1964-10-16 | Perfectionnements aux dispositifs semiconducteurs de commutation |
Country Status (5)
Country | Link |
---|---|
US (1) | US3331000A (fr) |
DE (1) | DE1464971A1 (fr) |
FR (1) | FR1415025A (fr) |
GB (1) | GB1071357A (fr) |
SE (1) | SE316532B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2006089A1 (fr) * | 1968-04-11 | 1969-12-19 | Westinghouse Electric Corp | Dispositif semi-conducteur et procede de fabrication correspondant |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3562610A (en) * | 1967-05-25 | 1971-02-09 | Westinghouse Electric Corp | Controlled rectifier with improved switching characteristics |
BE758745A (fr) * | 1969-11-10 | 1971-05-10 | Westinghouse Electric Corp | Perfectionnements aux ou en rapport avec les dispositifs semiconducteurs |
BE787597A (fr) * | 1971-08-16 | 1973-02-16 | Siemens Ag | Thyristor |
DE2506102C3 (de) * | 1975-02-13 | 1982-03-25 | Siemens AG, 1000 Berlin und 8000 München | Halbleitergleichrichter |
CN104409491B (zh) * | 2013-08-26 | 2017-10-27 | 湖北台基半导体股份有限公司 | 高压快开通晶闸管及其制造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL265766A (fr) * | 1960-06-10 | |||
BE623187A (fr) * | 1961-10-06 | |||
US3271587A (en) * | 1962-11-13 | 1966-09-06 | Texas Instruments Inc | Four-terminal semiconductor switch circuit |
US3249831A (en) * | 1963-01-04 | 1966-05-03 | Westinghouse Electric Corp | Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient |
US3277352A (en) * | 1963-03-14 | 1966-10-04 | Itt | Four layer semiconductor device |
-
1963
- 1963-10-18 US US317323A patent/US3331000A/en not_active Expired - Lifetime
-
1964
- 1964-10-08 GB GB41144/64A patent/GB1071357A/en not_active Expired
- 1964-10-16 FR FR991694A patent/FR1415025A/fr not_active Expired
- 1964-10-16 SE SE12473/64A patent/SE316532B/xx unknown
- 1964-10-17 DE DE19641464971 patent/DE1464971A1/de active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2006089A1 (fr) * | 1968-04-11 | 1969-12-19 | Westinghouse Electric Corp | Dispositif semi-conducteur et procede de fabrication correspondant |
Also Published As
Publication number | Publication date |
---|---|
GB1071357A (en) | 1967-06-07 |
SE316532B (fr) | 1969-10-27 |
DE1464971A1 (de) | 1969-04-30 |
US3331000A (en) | 1967-07-11 |
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