FR1424620A - Perfectionnements aux dispositifs de commutation bidirectionnels à semiconducteur - Google Patents

Perfectionnements aux dispositifs de commutation bidirectionnels à semiconducteur

Info

Publication number
FR1424620A
FR1424620A FR1691A FR1691A FR1424620A FR 1424620 A FR1424620 A FR 1424620A FR 1691 A FR1691 A FR 1691A FR 1691 A FR1691 A FR 1691A FR 1424620 A FR1424620 A FR 1424620A
Authority
FR
France
Prior art keywords
switching device
semiconductor switching
directional semiconductor
device enhancements
enhancements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR1691A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of FR1424620A publication Critical patent/FR1424620A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
FR1691A 1964-01-13 1965-01-13 Perfectionnements aux dispositifs de commutation bidirectionnels à semiconducteur Expired FR1424620A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US337384A US3391310A (en) 1964-01-13 1964-01-13 Semiconductor switch

Publications (1)

Publication Number Publication Date
FR1424620A true FR1424620A (fr) 1966-01-14

Family

ID=23320346

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1691A Expired FR1424620A (fr) 1964-01-13 1965-01-13 Perfectionnements aux dispositifs de commutation bidirectionnels à semiconducteur

Country Status (5)

Country Link
US (1) US3391310A (fr)
DE (1) DE1489894B2 (fr)
FR (1) FR1424620A (fr)
GB (1) GB1065150A (fr)
SE (1) SE317135B (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3489962A (en) * 1966-12-19 1970-01-13 Gen Electric Semiconductor switching device with emitter gate
US3504241A (en) * 1967-03-06 1970-03-31 Anatoly Nikolaevich Dumanevich Semiconductor bidirectional switch
SE320729B (fr) * 1968-06-05 1970-02-16 Asea Ab
US3827073A (en) * 1969-05-01 1974-07-30 Texas Instruments Inc Gated bilateral switching semiconductor device
GB1301193A (en) * 1970-02-27 1972-12-29 Mullard Ltd Improvements in semiconductor devices
US3846823A (en) * 1971-08-05 1974-11-05 Lucerne Products Inc Semiconductor assembly
US3967308A (en) * 1971-10-01 1976-06-29 Hitachi, Ltd. Semiconductor controlled rectifier
US3787719A (en) * 1972-11-10 1974-01-22 Westinghouse Brake & Signal Triac
US3959812A (en) * 1973-02-26 1976-05-25 Hitachi, Ltd. High-voltage semiconductor integrated circuit
US4060824A (en) * 1974-07-15 1977-11-29 Hutson Jearld L Slow speed semiconductor switching device
US4187515A (en) * 1974-08-15 1980-02-05 Tokyo Shibaura Electric Co., Ltd. Semiconductor controlled rectifier
US4063278A (en) * 1975-01-06 1977-12-13 Hutson Jearld L Semiconductor switch having sensitive gate characteristics at high temperatures
US4066483A (en) * 1976-07-07 1978-01-03 Western Electric Company, Inc. Gate-controlled bidirectional switching device
DE3018542A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbarem emitter-kurzschluss und verfahren zu seinem betrieb
US4797720A (en) * 1981-07-29 1989-01-10 American Telephone And Telegraph Company, At&T Bell Laboratories Controlled breakover bidirectional semiconductor switch
DE3561610D1 (en) * 1984-07-12 1988-03-17 Siemens Ag Semiconductor power switch with a thyristor
JP3142617B2 (ja) * 1991-11-27 2001-03-07 新電元工業株式会社 サージ防護素子
US5479031A (en) * 1993-09-10 1995-12-26 Teccor Electronics, Inc. Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2971139A (en) * 1959-06-16 1961-02-07 Fairchild Semiconductor Semiconductor switching device
NL135881C (fr) * 1959-08-05
US3476993A (en) * 1959-09-08 1969-11-04 Gen Electric Five layer and junction bridging terminal switching device
FR1267417A (fr) * 1959-09-08 1961-07-21 Thomson Houston Comp Francaise Dispositif à semi-conducteur et méthode de fabrication
US3176147A (en) * 1959-11-17 1965-03-30 Ibm Parallel connected two-terminal semiconductor devices of different negative resistance characteristics
US3196330A (en) * 1960-06-10 1965-07-20 Gen Electric Semiconductor devices and methods of making same
US3090873A (en) * 1960-06-21 1963-05-21 Bell Telephone Labor Inc Integrated semiconductor switching device
US3206612A (en) * 1960-08-18 1965-09-14 James E Swanekamp Signal time comparison circuit utilizing ujt characteristics
US3123750A (en) * 1961-10-31 1964-03-03 Multiple junction semiconductor device
US3188490A (en) * 1962-04-03 1965-06-08 Hunt Electronics Company Power control circuit utilizing a phase shift network for controlling the conduction time of thyratron type devices

Also Published As

Publication number Publication date
GB1065150A (en) 1967-04-12
DE1489894A1 (de) 1969-04-30
DE1489894B2 (de) 1976-01-22
US3391310A (en) 1968-07-02
SE317135B (fr) 1969-11-10

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