FR1441009A - Perfectionnements apportés aux dispositifs de contact pour interrupteurs à semiconducteur - Google Patents

Perfectionnements apportés aux dispositifs de contact pour interrupteurs à semiconducteur

Info

Publication number
FR1441009A
FR1441009A FR22568A FR22568A FR1441009A FR 1441009 A FR1441009 A FR 1441009A FR 22568 A FR22568 A FR 22568A FR 22568 A FR22568 A FR 22568A FR 1441009 A FR1441009 A FR 1441009A
Authority
FR
France
Prior art keywords
semiconductor switches
contact devices
devices
contact
switches
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR22568A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Danfoss AS
Original Assignee
Danfoss AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Danfoss AS filed Critical Danfoss AS
Application granted granted Critical
Publication of FR1441009A publication Critical patent/FR1441009A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/90—Bulk effect device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/93—Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermistors And Varistors (AREA)
  • Physical Vapour Deposition (AREA)
FR22568A 1964-07-04 1965-06-28 Perfectionnements apportés aux dispositifs de contact pour interrupteurs à semiconducteur Expired FR1441009A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DED44893A DE1231824B (de) 1964-07-04 1964-07-04 Kontaktanordnung fuer ein elektronisches Festkoerperschaltelement und Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
FR1441009A true FR1441009A (fr) 1966-06-03

Family

ID=7048625

Family Applications (1)

Application Number Title Priority Date Filing Date
FR22568A Expired FR1441009A (fr) 1964-07-04 1965-06-28 Perfectionnements apportés aux dispositifs de contact pour interrupteurs à semiconducteur

Country Status (5)

Country Link
US (1) US3432729A (fr)
CH (1) CH436439A (fr)
DE (1) DE1231824B (fr)
FR (1) FR1441009A (fr)
NL (1) NL6508408A (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3656032A (en) * 1969-09-22 1972-04-11 Energy Conversion Devices Inc Controllable semiconductor switch
US3886577A (en) * 1973-09-12 1975-05-27 Energy Conversion Devices Inc Filament-type memory semiconductor device and method of making the same
US3877049A (en) * 1973-11-28 1975-04-08 William D Buckley Electrodes for amorphous semiconductor switch devices and method of making the same
US3975755A (en) * 1975-03-17 1976-08-17 Xerox Corporation Stable non-crystalline material for switching devices
US4000508A (en) * 1975-07-17 1976-12-28 Honeywell Inc. Ohmic contacts to p-type mercury cadmium telluride
US4181913A (en) * 1977-05-31 1980-01-01 Xerox Corporation Resistive electrode amorphous semiconductor negative resistance device
US4433342A (en) * 1981-04-06 1984-02-21 Harris Corporation Amorphous switching device with residual crystallization retardation
DE3277665D1 (en) * 1981-08-07 1987-12-17 British Petroleum Co Plc Non-volatile electrically programmable memory device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE895199C (de) * 1945-04-19 1953-11-02 Telefunken Gmbh Kontaktdetektor
NL180750B (nl) * 1952-08-20 Bristol Myers Co Werkwijze voor het bereiden van een 7-amino-3-cefem-4-carbonzuur derivaat door een 7-acylamino-3-cefem-4-carbonzuur derivaat om te zetten.
DE1067936B (fr) * 1958-02-04 1959-10-29
US3202854A (en) * 1961-02-21 1965-08-24 Rca Corp Pickup tube target having an additive therein for reduced resistivity
NL284599A (fr) * 1961-05-26 1900-01-01
BE624465A (fr) * 1961-11-06
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3327302A (en) * 1964-04-10 1967-06-20 Energy Conversion Devices Inc Analog-to-digital converter employing semiconductor threshold device and differentiator circuit
US3327137A (en) * 1964-04-10 1967-06-20 Energy Conversion Devices Inc Square wave generator employing symmetrical, junctionless threshold-semiconductor and capacitor in series circuit devoid of current limiting impedances

Also Published As

Publication number Publication date
DE1231824B (de) 1967-01-05
NL6508408A (fr) 1966-01-05
CH436439A (de) 1967-05-31
US3432729A (en) 1969-03-11

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