FR1418640A - Perfectionnements aux semi-conducteurs de commutation - Google Patents

Perfectionnements aux semi-conducteurs de commutation

Info

Publication number
FR1418640A
FR1418640A FR999783A FR999783A FR1418640A FR 1418640 A FR1418640 A FR 1418640A FR 999783 A FR999783 A FR 999783A FR 999783 A FR999783 A FR 999783A FR 1418640 A FR1418640 A FR 1418640A
Authority
FR
France
Prior art keywords
semiconductor switching
advanced semiconductor
advanced
switching
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR999783A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of FR1418640A publication Critical patent/FR1418640A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436—Lateral thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
FR999783A 1963-12-26 1964-12-23 Perfectionnements aux semi-conducteurs de commutation Expired FR1418640A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US33347863A 1963-12-26 1963-12-26

Publications (1)

Publication Number Publication Date
FR1418640A true FR1418640A (fr) 1965-11-19

Family

ID=23302960

Family Applications (1)

Application Number Title Priority Date Filing Date
FR999783A Expired FR1418640A (fr) 1963-12-26 1964-12-23 Perfectionnements aux semi-conducteurs de commutation

Country Status (2)

Country Link
US (1) US3699406A (fr)
FR (1) FR1418640A (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3575646A (en) * 1966-09-23 1971-04-20 Westinghouse Electric Corp Integrated circuit structures including controlled rectifiers
US3590346A (en) * 1969-11-10 1971-06-29 Westinghouse Electric Corp High d/d, fast turn-on darlington controlled semiconductor switch
FR2085357A1 (fr) * 1970-04-13 1971-12-24 Comp Generale Electricite
FR2085358A1 (fr) * 1970-04-13 1971-12-24 Comp Generale Electricite
EP0001160A2 (fr) * 1977-09-08 1979-03-21 THE GENERAL ELECTRIC COMPANY, p.l.c. Dispositif semiconducteur planaire du type PNPN ayant une géométrie circulaire et détecteur du champ magnétique utilisant un tel dispositif
CH658916A5 (de) * 1982-09-13 1986-12-15 Landis & Gyr Ag Magnetfeldsensor.
EP0786817A1 (fr) * 1996-01-26 1997-07-30 STMicroelectronics S.A. Composants latéraux dans un dispositif semiconducteur de puissance

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5223715B2 (fr) * 1972-03-27 1977-06-25
US3881179A (en) * 1972-08-23 1975-04-29 Motorola Inc Zener diode structure having three terminals
US4032956A (en) * 1972-12-29 1977-06-28 Sony Corporation Transistor circuit
US3832732A (en) * 1973-01-11 1974-08-27 Westinghouse Electric Corp Light-activated lateral thyristor and ac switch
US3904931A (en) * 1973-08-03 1975-09-09 Rca Corp Overvoltage protection circuit
US4335392A (en) * 1978-03-23 1982-06-15 Brown, Boveri & Cie Aktiengesellschaft Semiconductor device with at least two semiconductor elements
DE3240564A1 (de) * 1982-11-03 1984-05-03 Licentia Patent-Verwaltungs-Gmbh Steuerbares halbleiterschaltelement
US6674148B1 (en) 1996-01-26 2004-01-06 Sgs-Thomson Microelectronics S.A. Lateral components in power semiconductor devices
US6936896B2 (en) * 2001-12-21 2005-08-30 Freescale Semiconductor, Inc. Semiconductor apparatus

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
US3177414A (en) * 1961-07-26 1965-04-06 Nippon Electric Co Device comprising a plurality of transistors
US3197681A (en) * 1961-09-29 1965-07-27 Texas Instruments Inc Semiconductor devices with heavily doped region to prevent surface inversion
BE630858A (fr) * 1962-04-10 1900-01-01
GB1047388A (fr) * 1962-10-05

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3575646A (en) * 1966-09-23 1971-04-20 Westinghouse Electric Corp Integrated circuit structures including controlled rectifiers
US3590346A (en) * 1969-11-10 1971-06-29 Westinghouse Electric Corp High d/d, fast turn-on darlington controlled semiconductor switch
FR2085357A1 (fr) * 1970-04-13 1971-12-24 Comp Generale Electricite
FR2085358A1 (fr) * 1970-04-13 1971-12-24 Comp Generale Electricite
EP0001160A2 (fr) * 1977-09-08 1979-03-21 THE GENERAL ELECTRIC COMPANY, p.l.c. Dispositif semiconducteur planaire du type PNPN ayant une géométrie circulaire et détecteur du champ magnétique utilisant un tel dispositif
EP0001160A3 (en) * 1977-09-08 1979-04-04 The General Electric Company Limited Planar pnpn semiconductor device of circular geometry and magnetic field sensor using such a device
CH658916A5 (de) * 1982-09-13 1986-12-15 Landis & Gyr Ag Magnetfeldsensor.
EP0786817A1 (fr) * 1996-01-26 1997-07-30 STMicroelectronics S.A. Composants latéraux dans un dispositif semiconducteur de puissance
FR2744287A1 (fr) * 1996-01-26 1997-08-01 Sgs Thomson Microelectronics Composants lateraux dans un dispositif semiconducteur de puissance

Also Published As

Publication number Publication date
US3699406A (en) 1972-10-17
DE1464984A1 (de) 1969-01-30
DE1464984B2 (de) 1973-02-15

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