FR1419719A - Perfectionnements aux semiconducteurs de commutation - Google Patents

Perfectionnements aux semiconducteurs de commutation

Info

Publication number
FR1419719A
FR1419719A FR989811A FR989811A FR1419719A FR 1419719 A FR1419719 A FR 1419719A FR 989811 A FR989811 A FR 989811A FR 989811 A FR989811 A FR 989811A FR 1419719 A FR1419719 A FR 1419719A
Authority
FR
France
Prior art keywords
switching semiconductor
semiconductor improvements
switching
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR989811A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US312382A external-priority patent/US3324359A/en
Application filed by General Electric Co filed Critical General Electric Co
Priority to FR989811A priority Critical patent/FR1419719A/fr
Application granted granted Critical
Publication of FR1419719A publication Critical patent/FR1419719A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
FR989811A 1963-09-30 1964-09-30 Perfectionnements aux semiconducteurs de commutation Expired FR1419719A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR989811A FR1419719A (fr) 1963-09-30 1964-09-30 Perfectionnements aux semiconducteurs de commutation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US312382A US3324359A (en) 1963-09-30 1963-09-30 Four layer semiconductor switch with the third layer defining a continuous, uninterrupted internal junction
FR989811A FR1419719A (fr) 1963-09-30 1964-09-30 Perfectionnements aux semiconducteurs de commutation

Publications (1)

Publication Number Publication Date
FR1419719A true FR1419719A (fr) 1965-12-03

Family

ID=26210253

Family Applications (1)

Application Number Title Priority Date Filing Date
FR989811A Expired FR1419719A (fr) 1963-09-30 1964-09-30 Perfectionnements aux semiconducteurs de commutation

Country Status (1)

Country Link
FR (1) FR1419719A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1684356A2 (fr) * 2002-12-09 2006-07-26 Micrel, Inc. Transistor bipolaire à jonction

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1684356A2 (fr) * 2002-12-09 2006-07-26 Micrel, Inc. Transistor bipolaire à jonction
EP1684356A3 (fr) * 2002-12-09 2006-11-29 Micrel, Inc. Transistor bipolaire à jonction

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