FR1400150A - Dispositifs semi-conducteurs perfectionnés - Google Patents

Dispositifs semi-conducteurs perfectionnés

Info

Publication number
FR1400150A
FR1400150A FR980505A FR980505A FR1400150A FR 1400150 A FR1400150 A FR 1400150A FR 980505 A FR980505 A FR 980505A FR 980505 A FR980505 A FR 980505A FR 1400150 A FR1400150 A FR 1400150A
Authority
FR
France
Prior art keywords
semiconductor devices
advanced semiconductor
advanced
devices
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR980505A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Priority to FR980505A priority Critical patent/FR1400150A/fr
Application granted granted Critical
Publication of FR1400150A publication Critical patent/FR1400150A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
FR980505A 1963-07-08 1964-07-02 Dispositifs semi-conducteurs perfectionnés Expired FR1400150A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR980505A FR1400150A (fr) 1963-07-08 1964-07-02 Dispositifs semi-conducteurs perfectionnés

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29340663A 1963-07-08 1963-07-08
FR980505A FR1400150A (fr) 1963-07-08 1964-07-02 Dispositifs semi-conducteurs perfectionnés

Publications (1)

Publication Number Publication Date
FR1400150A true FR1400150A (fr) 1965-05-21

Family

ID=26208683

Family Applications (1)

Application Number Title Priority Date Filing Date
FR980505A Expired FR1400150A (fr) 1963-07-08 1964-07-02 Dispositifs semi-conducteurs perfectionnés

Country Status (1)

Country Link
FR (1) FR1400150A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3432731A (en) * 1966-10-31 1969-03-11 Fairchild Camera Instr Co Planar high voltage four layer structures
US3463977A (en) * 1966-04-21 1969-08-26 Fairchild Camera Instr Co Optimized double-ring semiconductor device
DE1614187B1 (de) * 1966-09-19 1971-05-27 Matsushita Electronics Corp Halbleiterbauelement
DE2237616A1 (de) * 1972-07-31 1974-03-07 Licentia Gmbh Verfahren zum einschmelzen eines halbleiterbauelementes in ein glasgehaeuse
US4319262A (en) * 1979-02-13 1982-03-09 Sgs-Ates Componenti Elettronici S.P.A. Integrated-circuit structure including lateral PNP transistor with polysilicon layer bridging gap in collector field relief electrode

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3463977A (en) * 1966-04-21 1969-08-26 Fairchild Camera Instr Co Optimized double-ring semiconductor device
DE1614187B1 (de) * 1966-09-19 1971-05-27 Matsushita Electronics Corp Halbleiterbauelement
US3432731A (en) * 1966-10-31 1969-03-11 Fairchild Camera Instr Co Planar high voltage four layer structures
DE2237616A1 (de) * 1972-07-31 1974-03-07 Licentia Gmbh Verfahren zum einschmelzen eines halbleiterbauelementes in ein glasgehaeuse
US4319262A (en) * 1979-02-13 1982-03-09 Sgs-Ates Componenti Elettronici S.P.A. Integrated-circuit structure including lateral PNP transistor with polysilicon layer bridging gap in collector field relief electrode

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