CH431730A - Druckabhängige Halbleiteranordnung - Google Patents

Druckabhängige Halbleiteranordnung

Info

Publication number
CH431730A
CH431730A CH1580064A CH1580064A CH431730A CH 431730 A CH431730 A CH 431730A CH 1580064 A CH1580064 A CH 1580064A CH 1580064 A CH1580064 A CH 1580064A CH 431730 A CH431730 A CH 431730A
Authority
CH
Switzerland
Prior art keywords
semiconductor device
pressure dependent
dependent semiconductor
pressure
semiconductor
Prior art date
Application number
CH1580064A
Other languages
English (en)
Inventor
Friedrich Dipl Ing Krieger
Hans-Norbert Dipl In Toussaint
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH431730A publication Critical patent/CH431730A/de

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R23/00Transducers other than those covered by groups H04R9/00 - H04R21/00
    • H04R23/006Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761Vertical bipolar transistor in combination with diodes only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Signal Processing (AREA)
  • Acoustics & Sound (AREA)
  • Ceramic Engineering (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Bipolar Integrated Circuits (AREA)
CH1580064A 1963-12-09 1964-12-07 Druckabhängige Halbleiteranordnung CH431730A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES88651A DE1239871B (de) 1963-12-09 1963-12-09 Druckempfindliche Halbleiteranordnung

Publications (1)

Publication Number Publication Date
CH431730A true CH431730A (de) 1967-03-15

Family

ID=7514598

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1580064A CH431730A (de) 1963-12-09 1964-12-07 Druckabhängige Halbleiteranordnung

Country Status (7)

Country Link
US (1) US3319140A (de)
BE (1) BE656872A (de)
CH (1) CH431730A (de)
DE (1) DE1239871B (de)
GB (1) GB1075488A (de)
NL (1) NL6413213A (de)
SE (1) SE329414B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3463975A (en) * 1964-12-31 1969-08-26 Texas Instruments Inc Unitary semiconductor high speed switching device utilizing a barrier diode
US3414779A (en) * 1965-12-08 1968-12-03 Northern Electric Co Integrated parametric amplifier consisting of a material with both semiconductive and piezoelectric properties
NL6608194A (de) * 1966-06-14 1967-12-15
US3624315A (en) * 1967-01-23 1971-11-30 Max E Broce Transducer apparatus and transducer amplifier system utilizing insulated gate semiconductor field effect devices
CA920280A (en) * 1970-11-16 1973-01-30 Omron Tateisi Electronics Co. Semiconductive transducer
US3677280A (en) * 1971-06-21 1972-07-18 Fairchild Camera Instr Co Optimum high gain-bandwidth phototransistor structure
JPS5522949B2 (de) * 1972-02-19 1980-06-19

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL73417C (de) * 1948-08-19
US2632062A (en) * 1949-06-15 1953-03-17 Bell Telephone Labor Inc Semiconductor transducer
US3210620A (en) * 1961-10-04 1965-10-05 Westinghouse Electric Corp Semiconductor device providing diode functions

Also Published As

Publication number Publication date
NL6413213A (de) 1965-06-10
BE656872A (de) 1965-06-09
DE1239871B (de) 1967-05-03
SE329414B (de) 1970-10-12
US3319140A (en) 1967-05-09
GB1075488A (en) 1967-07-12

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