BE761109A - Dispositifs semiconducteurs commandes a courant eleve - Google Patents

Dispositifs semiconducteurs commandes a courant eleve

Info

Publication number
BE761109A
BE761109A BE761109A BE761109A BE761109A BE 761109 A BE761109 A BE 761109A BE 761109 A BE761109 A BE 761109A BE 761109 A BE761109 A BE 761109A BE 761109 A BE761109 A BE 761109A
Authority
BE
Belgium
Prior art keywords
semiconductor devices
high current
current controlled
controlled semiconductor
devices
Prior art date
Application number
BE761109A
Other languages
English (en)
Inventor
T P Nowalk
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of BE761109A publication Critical patent/BE761109A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
BE761109A 1970-01-02 1970-12-31 Dispositifs semiconducteurs commandes a courant eleve BE761109A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13270A 1970-01-02 1970-01-02

Publications (1)

Publication Number Publication Date
BE761109A true BE761109A (fr) 1971-06-30

Family

ID=21690069

Family Applications (1)

Application Number Title Priority Date Filing Date
BE761109A BE761109A (fr) 1970-01-02 1970-12-31 Dispositifs semiconducteurs commandes a courant eleve

Country Status (4)

Country Link
JP (1) JPS57660B1 (fr)
BE (1) BE761109A (fr)
DE (1) DE2064110A1 (fr)
FR (1) FR2075910A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2191267B1 (fr) * 1972-06-28 1977-02-18 Westinghouse Brake Semi Conduc
JPS6043668B2 (ja) * 1979-07-06 1985-09-30 株式会社日立製作所 半導体装置
JPS57201077A (en) * 1981-06-05 1982-12-09 Hitachi Ltd Semiconductor switching device
JPS5986260A (ja) * 1982-11-10 1984-05-18 Hitachi Ltd ゲ−トタ−ンオフサイリスタ
EP0220469B1 (fr) * 1985-10-15 1989-12-06 Siemens Aktiengesellschaft Thyristor de puissance

Also Published As

Publication number Publication date
DE2064110A1 (de) 1971-07-08
FR2075910A1 (fr) 1971-10-15
JPS57660B1 (fr) 1982-01-07

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Legal Events

Date Code Title Description
RE20 Patent expired

Owner name: WESTINGHOUSE ELECTRIC CORP.

Effective date: 19901231