DE2149039C2 - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
DE2149039C2
DE2149039C2 DE2149039A DE2149039A DE2149039C2 DE 2149039 C2 DE2149039 C2 DE 2149039C2 DE 2149039 A DE2149039 A DE 2149039A DE 2149039 A DE2149039 A DE 2149039A DE 2149039 C2 DE2149039 C2 DE 2149039C2
Authority
DE
Germany
Prior art keywords
zone
partial
transistor
semiconductor component
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2149039A
Other languages
German (de)
English (en)
Other versions
DE2149039A1 (de
Inventor
Thomas Alexander London Anderson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Brake English Electric Semi Conductors Ltd
Original Assignee
Westinghouse Brake English Electric Semi Conductors Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake English Electric Semi Conductors Ltd filed Critical Westinghouse Brake English Electric Semi Conductors Ltd
Publication of DE2149039A1 publication Critical patent/DE2149039A1/de
Application granted granted Critical
Publication of DE2149039C2 publication Critical patent/DE2149039C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Thyristors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE2149039A 1970-10-06 1971-10-01 Halbleiterbauelement Expired DE2149039C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4743070 1970-10-06

Publications (2)

Publication Number Publication Date
DE2149039A1 DE2149039A1 (de) 1972-04-13
DE2149039C2 true DE2149039C2 (de) 1982-10-28

Family

ID=10444942

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2149039A Expired DE2149039C2 (de) 1970-10-06 1971-10-01 Halbleiterbauelement

Country Status (7)

Country Link
US (1) US3693054A (en, 2012)
JP (1) JPS5431352B1 (en, 2012)
CA (1) CA923627A (en, 2012)
DE (1) DE2149039C2 (en, 2012)
FR (1) FR2110239B1 (en, 2012)
GB (1) GB1303337A (en, 2012)
SE (1) SE375189B (en, 2012)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4974486A (en, 2012) * 1972-11-17 1974-07-18
US3990092A (en) * 1974-01-11 1976-11-02 Hitachi, Ltd. Resistance element for semiconductor integrated circuit
JPS5232686A (en) * 1975-09-09 1977-03-12 Origin Electric Co Ltd Semiconductor composite device
FR2377095A1 (fr) * 1977-01-10 1978-08-04 Alsthom Atlantique Thyristor a amplificateur de declenchement et a ouverture commandee par la gachette
US4156248A (en) * 1977-01-31 1979-05-22 Rca Corporation Gate turn-off semiconductor controlled rectifier device with highly doped buffer region portion
DE2855546A1 (de) * 1977-12-23 1979-07-05 Gen Electric Verfahren zum herstellen feldgesteuerter thyristoren
JPS5933272B2 (ja) * 1978-06-19 1984-08-14 株式会社日立製作所 半導体装置
US4623910A (en) 1982-09-24 1986-11-18 Risberg Robert L Semiconductor device
GB8305878D0 (en) * 1983-03-03 1983-04-07 Texas Instruments Ltd Starter circuit
US4673844A (en) * 1985-09-30 1987-06-16 Texas Instruments Incorporated Starter circuit for a fluorescent tube lamp
GB2261321B (en) * 1991-11-06 1995-10-11 Motorola Inc Power semiconductor device with temperature sensor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3176147A (en) * 1959-11-17 1965-03-30 Ibm Parallel connected two-terminal semiconductor devices of different negative resistance characteristics
DE1464960A1 (de) * 1963-09-03 1969-08-28 Gen Electric Halbleiter-Schalter
US3584270A (en) * 1968-03-13 1971-06-08 Westinghouse Electric Corp High speed switching rectifier
US3590339A (en) * 1970-01-30 1971-06-29 Westinghouse Electric Corp Gate controlled switch transistor drive integrated circuit (thytran)
US3622841A (en) * 1970-04-16 1971-11-23 Motorola Inc Triac having increased commutating speed

Also Published As

Publication number Publication date
GB1303337A (en, 2012) 1973-01-17
US3693054A (en) 1972-09-19
DE2149039A1 (de) 1972-04-13
SE375189B (en, 2012) 1975-04-07
FR2110239A1 (en, 2012) 1972-06-02
FR2110239B1 (en, 2012) 1977-04-22
JPS5431352B1 (en, 2012) 1979-10-06
CA923627A (en) 1973-03-27

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Legal Events

Date Code Title Description
OD Request for examination
D2 Grant after examination
8339 Ceased/non-payment of the annual fee