DE3721001C2 - - Google Patents

Info

Publication number
DE3721001C2
DE3721001C2 DE3721001A DE3721001A DE3721001C2 DE 3721001 C2 DE3721001 C2 DE 3721001C2 DE 3721001 A DE3721001 A DE 3721001A DE 3721001 A DE3721001 A DE 3721001A DE 3721001 C2 DE3721001 C2 DE 3721001C2
Authority
DE
Germany
Prior art keywords
zone
semiconductor
metal ring
main
floating metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3721001A
Other languages
German (de)
English (en)
Other versions
DE3721001A1 (de
Inventor
Horst Dipl.-Phys. Meinders
Christian Dipl.-Phys. Dr. 7410 Reutlingen De Pluntke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to DE19873721001 priority Critical patent/DE3721001A1/de
Priority to PCT/DE1988/000266 priority patent/WO1988010512A1/de
Publication of DE3721001A1 publication Critical patent/DE3721001A1/de
Application granted granted Critical
Publication of DE3721001C2 publication Critical patent/DE3721001C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE19873721001 1987-06-25 1987-06-25 Hochsperrendes halbleiterbauelement Granted DE3721001A1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE19873721001 DE3721001A1 (de) 1987-06-25 1987-06-25 Hochsperrendes halbleiterbauelement
PCT/DE1988/000266 WO1988010512A1 (fr) 1987-06-25 1988-05-05 Composant semi-conducteur a pouvoir bloquant eleve

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19873721001 DE3721001A1 (de) 1987-06-25 1987-06-25 Hochsperrendes halbleiterbauelement

Publications (2)

Publication Number Publication Date
DE3721001A1 DE3721001A1 (de) 1989-01-05
DE3721001C2 true DE3721001C2 (en, 2012) 1993-04-22

Family

ID=6330284

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873721001 Granted DE3721001A1 (de) 1987-06-25 1987-06-25 Hochsperrendes halbleiterbauelement

Country Status (2)

Country Link
DE (1) DE3721001A1 (en, 2012)
WO (1) WO1988010512A1 (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4410354A1 (de) * 1994-03-25 1995-10-19 Semikron Elektronik Gmbh Leistungshalbleiterbauelement

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5204545A (en) * 1989-11-22 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Structure for preventing field concentration in semiconductor device and method of forming the same
JPH0783048B2 (ja) * 1989-11-22 1995-09-06 三菱電機株式会社 半導体装置における電界集中防止構造およびその形成方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE38718C (de) * R. herrmann in Stötteritz Neuerung an Liniirmaschinen
GB1030050A (en) * 1963-11-13 1966-05-18 Motorola Inc Punchthrough breakdown rectifier
DE3122352A1 (de) * 1981-06-05 1983-01-13 Horst Dipl.-Phys. 7410 Reutlingen Meinders Hochsperrendes, planares halbleiterbauelement mit lackabdeckung
JPS5976466A (ja) * 1982-10-25 1984-05-01 Mitsubishi Electric Corp プレ−ナ形半導体装置
JPS61158177A (ja) * 1984-12-28 1986-07-17 Toshiba Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4410354A1 (de) * 1994-03-25 1995-10-19 Semikron Elektronik Gmbh Leistungshalbleiterbauelement

Also Published As

Publication number Publication date
WO1988010512A1 (fr) 1988-12-29
DE3721001A1 (de) 1989-01-05

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee