BE862498A - Thyristor a amplificateur de declenchement et a ouverture commandee par la gachette - Google Patents

Thyristor a amplificateur de declenchement et a ouverture commandee par la gachette

Info

Publication number
BE862498A
BE862498A BE1008621A BE1008621A BE862498A BE 862498 A BE862498 A BE 862498A BE 1008621 A BE1008621 A BE 1008621A BE 1008621 A BE1008621 A BE 1008621A BE 862498 A BE862498 A BE 862498A
Authority
BE
Belgium
Prior art keywords
trigger
thyristor
amplifier controlled
opening
opening amplifier
Prior art date
Application number
BE1008621A
Other languages
English (en)
Original Assignee
Alsthom Atlantique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alsthom Atlantique filed Critical Alsthom Atlantique
Publication of BE862498A publication Critical patent/BE862498A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
BE1008621A 1977-01-10 1977-12-30 Thyristor a amplificateur de declenchement et a ouverture commandee par la gachette BE862498A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7700471A FR2377095A1 (fr) 1977-01-10 1977-01-10 Thyristor a amplificateur de declenchement et a ouverture commandee par la gachette

Publications (1)

Publication Number Publication Date
BE862498A true BE862498A (fr) 1978-06-30

Family

ID=9185269

Family Applications (1)

Application Number Title Priority Date Filing Date
BE1008621A BE862498A (fr) 1977-01-10 1977-12-30 Thyristor a amplificateur de declenchement et a ouverture commandee par la gachette

Country Status (5)

Country Link
US (1) US4177478A (fr)
BE (1) BE862498A (fr)
DE (1) DE2800172C2 (fr)
FR (1) FR2377095A1 (fr)
GB (1) GB1542227A (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2825794C2 (de) * 1978-06-13 1986-03-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Abschaltbarer Thyristor
JPS607394B2 (ja) * 1978-08-18 1985-02-23 株式会社明電舎 半導体制御素子
DE3005458A1 (de) * 1980-01-16 1981-07-23 BBC AG Brown, Boveri & Cie., Baden, Aargau Thyristor zum verlustarmen schalten kurzer impulse
JPS57201077A (en) * 1981-06-05 1982-12-09 Hitachi Ltd Semiconductor switching device
JPS5871657A (ja) * 1981-10-23 1983-04-28 Toshiba Corp ゲ−トタ−ンオフサイリスタ
JPS5927571A (ja) * 1982-08-05 1984-02-14 Meidensha Electric Mfg Co Ltd ゲ−トタ−ンオフサイリスタ
EP0108874B1 (fr) * 1982-11-15 1987-11-25 Kabushiki Kaisha Toshiba Thyristor contrôlable par radiation
DE3435548A1 (de) * 1984-09-27 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hoher innerer zuendverstaerkung
EP0190585A1 (fr) * 1985-02-01 1986-08-13 Siemens Aktiengesellschaft Dispositif semi-conducteur que l'on peut interrompre
JPH0691245B2 (ja) * 1985-06-26 1994-11-14 株式会社日立製作所 ゲ−トタ−ンオフサイリスタ
JPS62177968A (ja) * 1986-01-31 1987-08-04 Hitachi Ltd ゲ−トタ−ンオフサイリスタ
US4717940A (en) * 1986-03-11 1988-01-05 Kabushiki Kaisha Toshiba MIS controlled gate turn-off thyristor
EP0283788A1 (fr) * 1987-03-09 1988-09-28 Siemens Aktiengesellschaft Dispositif semi-conducteur de puissance à extinction
CN1056248C (zh) * 1992-09-12 2000-09-06 朱文有 一种静电感应晶闸管的制造方法及其器件
FR2708811B1 (fr) * 1993-08-06 1995-10-20 Sgs Thomson Microelectronics Thyristor à amplification de gachette à courant de maintien accru.
US6066864A (en) * 1996-05-20 2000-05-23 Siemens Aktiengesellschaft Thyristor with integrated dU/dt protection

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1803935A1 (de) * 1967-10-20 1969-10-02 Ckd Praha Mehrschichtiges Halbleiterbauelement mit zumindest vier pn-UEbergaengen
US3641403A (en) * 1970-05-25 1972-02-08 Mitsubishi Electric Corp Thyristor with degenerate semiconductive region
GB1303337A (fr) * 1970-10-06 1973-01-17
DE2241217C3 (de) * 1972-08-22 1978-07-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristor mit erhöhter Ein- und Durchschaltgeschwindigkeit
US3906545A (en) * 1972-01-24 1975-09-16 Licentia Gmbh Thyristor structure
US3896476A (en) * 1973-05-02 1975-07-22 Mitsubishi Electric Corp Semiconductor switching device
JPS5718347B2 (fr) * 1974-01-07 1982-04-16
FR2299727A1 (fr) * 1975-01-28 1976-08-27 Alsthom Cgee Thyristor a caracteristiques de commutation ameliorees

Also Published As

Publication number Publication date
FR2377095A1 (fr) 1978-08-04
GB1542227A (en) 1979-03-14
FR2377095B1 (fr) 1980-02-29
US4177478A (en) 1979-12-04
DE2800172C2 (de) 1983-05-26
DE2800172A1 (de) 1978-07-13

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