GB1524685A - Charge-transfer devices - Google Patents
Charge-transfer devicesInfo
- Publication number
- GB1524685A GB1524685A GB38587/75A GB3858775A GB1524685A GB 1524685 A GB1524685 A GB 1524685A GB 38587/75 A GB38587/75 A GB 38587/75A GB 3858775 A GB3858775 A GB 3858775A GB 1524685 A GB1524685 A GB 1524685A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrodes
- layer
- deposited
- oxide
- thick
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 238000005247 gettering Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 230000001590 oxidative effect Effects 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000001444 catalytic combustion detection Methods 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000002068 genetic effect Effects 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000010301 surface-oxidation reaction Methods 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/462—Buried-channel CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/01—Manufacture or treatment
- H10D44/041—Manufacture or treatment having insulated gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/335—Channel regions of field-effect devices of charge-coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NLAANVRAGE7412567,A NL184591C (nl) | 1974-09-24 | 1974-09-24 | Ladingsoverdrachtinrichting. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1524685A true GB1524685A (en) | 1978-09-13 |
Family
ID=19822150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB38587/75A Expired GB1524685A (en) | 1974-09-24 | 1975-09-19 | Charge-transfer devices |
Country Status (10)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0214702A1 (en) * | 1985-09-11 | 1987-03-18 | Koninklijke Philips Electronics N.V. | Method of manufacturing a semiconductor device with mutually insulated strip-shaped silicon electrodes overlapping each other |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5760542A (en) * | 1980-09-29 | 1982-04-12 | Toshiba Corp | Information recording medium |
| JPS57169938A (en) * | 1981-04-10 | 1982-10-19 | Sony Corp | Optical type recording medium |
| JPS57172549A (en) * | 1981-04-17 | 1982-10-23 | C B S Sony Rekoode Kk | Optical recording medium |
| JPS5814342A (ja) * | 1981-07-16 | 1983-01-27 | Sharp Corp | 光記憶素子の製造方法 |
| JPS591136U (ja) * | 1982-06-25 | 1984-01-06 | 松下電器産業株式会社 | 光情報担体 |
| JPS5974534U (ja) * | 1982-11-10 | 1984-05-21 | パイオニア株式会社 | 光学式デイスク |
| JPS59177032U (ja) * | 1983-05-13 | 1984-11-27 | 日立コンデンサ株式会社 | レ−ザ−デイスク |
| FR2641416A1 (fr) * | 1988-12-30 | 1990-07-06 | Thomson Composants Militaires | Procede de fabrication d'un dispositif a transfert de charges |
| CA2150330A1 (en) * | 1994-05-27 | 1995-11-28 | Andre Willem Visagie | Shadow box or box frame unit |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3770988A (en) * | 1970-09-04 | 1973-11-06 | Gen Electric | Self-registered surface charge launch-receive device and method for making |
| US3859717A (en) * | 1970-12-21 | 1975-01-14 | Rockwell International Corp | Method of manufacturing control electrodes for charge coupled circuits and the like |
| US4032952A (en) * | 1972-04-03 | 1977-06-28 | Hitachi, Ltd. | Bulk charge transfer semiconductor device |
| IT981505B (it) * | 1972-05-30 | 1974-10-10 | Ibm | Dispositivo a semiconduttori a cariche accoppiate perfezionato |
| DE2314260A1 (de) * | 1972-05-30 | 1973-12-13 | Ibm | Ladungsgekoppelte halbleiteranordnung und verfahren zu ihrer herstellung |
-
1974
- 1974-09-24 NL NLAANVRAGE7412567,A patent/NL184591C/xx not_active IP Right Cessation
-
1975
- 1975-09-18 DE DE2541651A patent/DE2541651C2/de not_active Expired
- 1975-09-19 CA CA235,924A patent/CA1055159A/en not_active Expired
- 1975-09-19 IT IT27456/75A patent/IT1042721B/it active
- 1975-09-19 GB GB38587/75A patent/GB1524685A/en not_active Expired
- 1975-09-19 CH CH1217875A patent/CH593561A5/xx not_active IP Right Cessation
- 1975-09-22 AU AU85037/75A patent/AU497138B2/en not_active Expired
- 1975-09-22 SE SE7510593A patent/SE401578B/xx unknown
- 1975-09-23 JP JP50114407A patent/JPS5158079A/ja active Granted
- 1975-09-23 FR FR7529102A patent/FR2286506A1/fr active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0214702A1 (en) * | 1985-09-11 | 1987-03-18 | Koninklijke Philips Electronics N.V. | Method of manufacturing a semiconductor device with mutually insulated strip-shaped silicon electrodes overlapping each other |
Also Published As
| Publication number | Publication date |
|---|---|
| AU8503775A (en) | 1977-03-31 |
| AU497138B2 (en) | 1978-11-30 |
| FR2286506B1 (enrdf_load_stackoverflow) | 1979-05-11 |
| IT1042721B (it) | 1980-01-30 |
| CH593561A5 (enrdf_load_stackoverflow) | 1977-12-15 |
| NL184591B (nl) | 1989-04-03 |
| DE2541651C2 (de) | 1983-10-06 |
| SE401578B (sv) | 1978-05-16 |
| FR2286506A1 (fr) | 1976-04-23 |
| JPS5158079A (en) | 1976-05-21 |
| NL7412567A (nl) | 1976-03-26 |
| CA1055159A (en) | 1979-05-22 |
| DE2541651A1 (de) | 1976-04-08 |
| JPS5528227B2 (enrdf_load_stackoverflow) | 1980-07-26 |
| SE7510593L (sv) | 1976-03-25 |
| NL184591C (nl) | 1989-09-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19940919 |