SE401578B - Laddningsoverforingsanordning och sett for dess framstellning - Google Patents

Laddningsoverforingsanordning och sett for dess framstellning

Info

Publication number
SE401578B
SE401578B SE7510593A SE7510593A SE401578B SE 401578 B SE401578 B SE 401578B SE 7510593 A SE7510593 A SE 7510593A SE 7510593 A SE7510593 A SE 7510593A SE 401578 B SE401578 B SE 401578B
Authority
SE
Sweden
Prior art keywords
kit
manufacture
transfer device
charge transfer
charge
Prior art date
Application number
SE7510593A
Other languages
English (en)
Swedish (sv)
Other versions
SE7510593L (sv
Inventor
M J J Theunissen
R P Kramer
H L Peek
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE7510593L publication Critical patent/SE7510593L/xx
Publication of SE401578B publication Critical patent/SE401578B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66946—Charge transfer devices
    • H01L29/66954—Charge transfer devices with an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
SE7510593A 1974-09-24 1975-09-22 Laddningsoverforingsanordning och sett for dess framstellning SE401578B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7412567,A NL184591C (nl) 1974-09-24 1974-09-24 Ladingsoverdrachtinrichting.

Publications (2)

Publication Number Publication Date
SE7510593L SE7510593L (sv) 1976-03-25
SE401578B true SE401578B (sv) 1978-05-16

Family

ID=19822150

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7510593A SE401578B (sv) 1974-09-24 1975-09-22 Laddningsoverforingsanordning och sett for dess framstellning

Country Status (10)

Country Link
JP (1) JPS5158079A (xx)
AU (1) AU497138B2 (xx)
CA (1) CA1055159A (xx)
CH (1) CH593561A5 (xx)
DE (1) DE2541651C2 (xx)
FR (1) FR2286506A1 (xx)
GB (1) GB1524685A (xx)
IT (1) IT1042721B (xx)
NL (1) NL184591C (xx)
SE (1) SE401578B (xx)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5727494A (en) * 1980-07-23 1982-02-13 Sharp Corp Magneto-optical storage element
JPS5760542A (en) * 1980-09-29 1982-04-12 Toshiba Corp Information recording medium
JPS5766538A (en) * 1980-10-08 1982-04-22 Toshiba Corp Information storage medium
JPS57169938A (en) * 1981-04-10 1982-10-19 Sony Corp Optical type recording medium
JPS57172549A (en) * 1981-04-17 1982-10-23 C B S Sony Rekoode Kk Optical recording medium
JPS5814342A (ja) * 1981-07-16 1983-01-27 Sharp Corp 光記憶素子の製造方法
JPS591136U (ja) * 1982-06-25 1984-01-06 松下電器産業株式会社 光情報担体
JPS5974534U (ja) * 1982-11-10 1984-05-21 パイオニア株式会社 光学式デイスク
JPS5999779U (ja) * 1982-12-24 1984-07-05 共同印刷株式会社 光メモリ−媒体をもつｉｄカ−ド
JPS59177032U (ja) * 1983-05-13 1984-11-27 日立コンデンサ株式会社 レ−ザ−デイスク
NL8502478A (nl) * 1985-09-11 1987-04-01 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
FR2641416A1 (fr) * 1988-12-30 1990-07-06 Thomson Composants Militaires Procede de fabrication d'un dispositif a transfert de charges
CA2150330A1 (en) * 1994-05-27 1995-11-28 Andre Willem Visagie Shadow box or box frame unit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770988A (en) * 1970-09-04 1973-11-06 Gen Electric Self-registered surface charge launch-receive device and method for making
US3859717A (en) * 1970-12-21 1975-01-14 Rockwell International Corp Method of manufacturing control electrodes for charge coupled circuits and the like
NL165886C (nl) * 1972-04-03 1981-05-15 Hitachi Ltd Halfgeleiderinrichting van het ladingsgekoppelde type voor het opslaan en in volgorgde overdragen van pakketten meerderheidsladingdragers.
IT981505B (it) * 1972-05-30 1974-10-10 Ibm Dispositivo a semiconduttori a cariche accoppiate perfezionato
DE2314260A1 (de) * 1972-05-30 1973-12-13 Ibm Ladungsgekoppelte halbleiteranordnung und verfahren zu ihrer herstellung

Also Published As

Publication number Publication date
NL7412567A (nl) 1976-03-26
FR2286506A1 (fr) 1976-04-23
NL184591B (nl) 1989-04-03
SE7510593L (sv) 1976-03-25
AU497138B2 (en) 1978-11-30
NL184591C (nl) 1989-09-01
CA1055159A (en) 1979-05-22
JPS5158079A (en) 1976-05-21
CH593561A5 (xx) 1977-12-15
DE2541651C2 (de) 1983-10-06
DE2541651A1 (de) 1976-04-08
GB1524685A (en) 1978-09-13
FR2286506B1 (xx) 1979-05-11
IT1042721B (it) 1980-01-30
AU8503775A (en) 1977-03-31
JPS5528227B2 (xx) 1980-07-26

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