CA1055159A - Charge transfer device manufacture - Google Patents
Charge transfer device manufactureInfo
- Publication number
- CA1055159A CA1055159A CA235,924A CA235924A CA1055159A CA 1055159 A CA1055159 A CA 1055159A CA 235924 A CA235924 A CA 235924A CA 1055159 A CA1055159 A CA 1055159A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- electrodes
- sub
- conductor layer
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 61
- 230000003647 oxidation Effects 0.000 claims abstract description 46
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 46
- 238000011282 treatment Methods 0.000 claims abstract description 38
- 238000005530 etching Methods 0.000 claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 5
- 239000004020 conductor Substances 0.000 claims description 78
- 239000000463 material Substances 0.000 claims description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 230000000873 masking effect Effects 0.000 claims description 10
- 238000005247 gettering Methods 0.000 claims description 8
- 230000005684 electric field Effects 0.000 claims description 5
- 238000012216 screening Methods 0.000 claims description 5
- 239000002800 charge carrier Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 abstract description 35
- 239000010410 layer Substances 0.000 description 278
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 230000008901 benefit Effects 0.000 description 7
- 239000000543 intermediate Substances 0.000 description 7
- 238000002955 isolation Methods 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 101100400378 Mus musculus Marveld2 gene Proteins 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 235000014786 phosphorus Nutrition 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 244000228957 Ferula foetida Species 0.000 description 1
- 101000836150 Homo sapiens Transforming acidic coiled-coil-containing protein 3 Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 102000017795 Perilipin-1 Human genes 0.000 description 1
- 108010067162 Perilipin-1 Proteins 0.000 description 1
- 102100027048 Transforming acidic coiled-coil-containing protein 3 Human genes 0.000 description 1
- 230000009102 absorption Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000019771 cognition Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- MYWUZJCMWCOHBA-VIFPVBQESA-N methamphetamine Chemical compound CN[C@@H](C)CC1=CC=CC=C1 MYWUZJCMWCOHBA-VIFPVBQESA-N 0.000 description 1
- KRTSDMXIXPKRQR-AATRIKPKSA-N monocrotophos Chemical compound CNC(=O)\C=C(/C)OP(=O)(OC)OC KRTSDMXIXPKRQR-AATRIKPKSA-N 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- -1 phospho Chemical class 0.000 description 1
- LFGREXWGYUGZLY-UHFFFAOYSA-N phosphoryl Chemical compound [P]=O LFGREXWGYUGZLY-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66946—Charge transfer devices
- H01L29/66954—Charge transfer devices with an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NLAANVRAGE7412567,A NL184591C (nl) | 1974-09-24 | 1974-09-24 | Ladingsoverdrachtinrichting. |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1055159A true CA1055159A (en) | 1979-05-22 |
Family
ID=19822150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA235,924A Expired CA1055159A (en) | 1974-09-24 | 1975-09-19 | Charge transfer device manufacture |
Country Status (10)
Country | Link |
---|---|
JP (1) | JPS5158079A (xx) |
AU (1) | AU497138B2 (xx) |
CA (1) | CA1055159A (xx) |
CH (1) | CH593561A5 (xx) |
DE (1) | DE2541651C2 (xx) |
FR (1) | FR2286506A1 (xx) |
GB (1) | GB1524685A (xx) |
IT (1) | IT1042721B (xx) |
NL (1) | NL184591C (xx) |
SE (1) | SE401578B (xx) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5727494A (en) * | 1980-07-23 | 1982-02-13 | Sharp Corp | Magneto-optical storage element |
JPS5760542A (en) * | 1980-09-29 | 1982-04-12 | Toshiba Corp | Information recording medium |
JPS5766538A (en) * | 1980-10-08 | 1982-04-22 | Toshiba Corp | Information storage medium |
JPS57169938A (en) * | 1981-04-10 | 1982-10-19 | Sony Corp | Optical type recording medium |
JPS57172549A (en) * | 1981-04-17 | 1982-10-23 | C B S Sony Rekoode Kk | Optical recording medium |
JPS5814342A (ja) * | 1981-07-16 | 1983-01-27 | Sharp Corp | 光記憶素子の製造方法 |
JPS591136U (ja) * | 1982-06-25 | 1984-01-06 | 松下電器産業株式会社 | 光情報担体 |
JPS5974534U (ja) * | 1982-11-10 | 1984-05-21 | パイオニア株式会社 | 光学式デイスク |
JPS5999779U (ja) * | 1982-12-24 | 1984-07-05 | 共同印刷株式会社 | 光メモリ−媒体をもつidカ−ド |
JPS59177032U (ja) * | 1983-05-13 | 1984-11-27 | 日立コンデンサ株式会社 | レ−ザ−デイスク |
NL8502478A (nl) * | 1985-09-11 | 1987-04-01 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
FR2641416A1 (fr) * | 1988-12-30 | 1990-07-06 | Thomson Composants Militaires | Procede de fabrication d'un dispositif a transfert de charges |
CA2150330A1 (en) * | 1994-05-27 | 1995-11-28 | Andre Willem Visagie | Shadow box or box frame unit |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3770988A (en) * | 1970-09-04 | 1973-11-06 | Gen Electric | Self-registered surface charge launch-receive device and method for making |
US3859717A (en) * | 1970-12-21 | 1975-01-14 | Rockwell International Corp | Method of manufacturing control electrodes for charge coupled circuits and the like |
NL165886C (nl) * | 1972-04-03 | 1981-05-15 | Hitachi Ltd | Halfgeleiderinrichting van het ladingsgekoppelde type voor het opslaan en in volgorgde overdragen van pakketten meerderheidsladingdragers. |
DE2314260A1 (de) * | 1972-05-30 | 1973-12-13 | Ibm | Ladungsgekoppelte halbleiteranordnung und verfahren zu ihrer herstellung |
IT981505B (it) * | 1972-05-30 | 1974-10-10 | Ibm | Dispositivo a semiconduttori a cariche accoppiate perfezionato |
-
1974
- 1974-09-24 NL NLAANVRAGE7412567,A patent/NL184591C/xx not_active IP Right Cessation
-
1975
- 1975-09-18 DE DE2541651A patent/DE2541651C2/de not_active Expired
- 1975-09-19 GB GB38587/75A patent/GB1524685A/en not_active Expired
- 1975-09-19 CH CH1217875A patent/CH593561A5/xx not_active IP Right Cessation
- 1975-09-19 IT IT27456/75A patent/IT1042721B/it active
- 1975-09-19 CA CA235,924A patent/CA1055159A/en not_active Expired
- 1975-09-22 AU AU85037/75A patent/AU497138B2/en not_active Expired
- 1975-09-22 SE SE7510593A patent/SE401578B/xx unknown
- 1975-09-23 JP JP50114407A patent/JPS5158079A/ja active Granted
- 1975-09-23 FR FR7529102A patent/FR2286506A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
DE2541651C2 (de) | 1983-10-06 |
FR2286506B1 (xx) | 1979-05-11 |
JPS5528227B2 (xx) | 1980-07-26 |
FR2286506A1 (fr) | 1976-04-23 |
SE401578B (sv) | 1978-05-16 |
CH593561A5 (xx) | 1977-12-15 |
NL184591C (nl) | 1989-09-01 |
GB1524685A (en) | 1978-09-13 |
JPS5158079A (en) | 1976-05-21 |
AU497138B2 (en) | 1978-11-30 |
IT1042721B (it) | 1980-01-30 |
SE7510593L (sv) | 1976-03-25 |
AU8503775A (en) | 1977-03-31 |
NL7412567A (nl) | 1976-03-26 |
DE2541651A1 (de) | 1976-04-08 |
NL184591B (nl) | 1989-04-03 |
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