FR2286506A1 - Dispositif de transfert de charges - Google Patents

Dispositif de transfert de charges

Info

Publication number
FR2286506A1
FR2286506A1 FR7529102A FR7529102A FR2286506A1 FR 2286506 A1 FR2286506 A1 FR 2286506A1 FR 7529102 A FR7529102 A FR 7529102A FR 7529102 A FR7529102 A FR 7529102A FR 2286506 A1 FR2286506 A1 FR 2286506A1
Authority
FR
France
Prior art keywords
transfer device
load transfer
load
transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7529102A
Other languages
English (en)
French (fr)
Other versions
FR2286506B1 (xx
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2286506A1 publication Critical patent/FR2286506A1/fr
Application granted granted Critical
Publication of FR2286506B1 publication Critical patent/FR2286506B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66946—Charge transfer devices
    • H01L29/66954—Charge transfer devices with an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR7529102A 1974-09-24 1975-09-23 Dispositif de transfert de charges Granted FR2286506A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7412567,A NL184591C (nl) 1974-09-24 1974-09-24 Ladingsoverdrachtinrichting.

Publications (2)

Publication Number Publication Date
FR2286506A1 true FR2286506A1 (fr) 1976-04-23
FR2286506B1 FR2286506B1 (xx) 1979-05-11

Family

ID=19822150

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7529102A Granted FR2286506A1 (fr) 1974-09-24 1975-09-23 Dispositif de transfert de charges

Country Status (10)

Country Link
JP (1) JPS5158079A (xx)
AU (1) AU497138B2 (xx)
CA (1) CA1055159A (xx)
CH (1) CH593561A5 (xx)
DE (1) DE2541651C2 (xx)
FR (1) FR2286506A1 (xx)
GB (1) GB1524685A (xx)
IT (1) IT1042721B (xx)
NL (1) NL184591C (xx)
SE (1) SE401578B (xx)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0376777A1 (fr) * 1988-12-30 1990-07-04 Thomson Composants Militaires Et Spatiaux Procédé de fabrication d'un dispositif à transfert de charges

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5727494A (en) * 1980-07-23 1982-02-13 Sharp Corp Magneto-optical storage element
JPS5760542A (en) * 1980-09-29 1982-04-12 Toshiba Corp Information recording medium
JPS5766538A (en) * 1980-10-08 1982-04-22 Toshiba Corp Information storage medium
JPS57169938A (en) * 1981-04-10 1982-10-19 Sony Corp Optical type recording medium
JPS57172549A (en) * 1981-04-17 1982-10-23 C B S Sony Rekoode Kk Optical recording medium
JPS5814342A (ja) * 1981-07-16 1983-01-27 Sharp Corp 光記憶素子の製造方法
JPS591136U (ja) * 1982-06-25 1984-01-06 松下電器産業株式会社 光情報担体
JPS5974534U (ja) * 1982-11-10 1984-05-21 パイオニア株式会社 光学式デイスク
JPS5999779U (ja) * 1982-12-24 1984-07-05 共同印刷株式会社 光メモリ−媒体をもつｉｄカ−ド
JPS59177032U (ja) * 1983-05-13 1984-11-27 日立コンデンサ株式会社 レ−ザ−デイスク
NL8502478A (nl) * 1985-09-11 1987-04-01 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
CA2150330A1 (en) * 1994-05-27 1995-11-28 Andre Willem Visagie Shadow box or box frame unit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2118944A1 (xx) * 1970-12-21 1972-08-04 North American Rockwell
DE2316612A1 (de) * 1972-04-03 1973-10-18 Hitachi Ltd Ladungsuebertragungs-halbleitervorrichtungen
FR2186733A1 (xx) * 1972-05-30 1974-01-11 Ibm

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770988A (en) * 1970-09-04 1973-11-06 Gen Electric Self-registered surface charge launch-receive device and method for making
IT981505B (it) * 1972-05-30 1974-10-10 Ibm Dispositivo a semiconduttori a cariche accoppiate perfezionato

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2118944A1 (xx) * 1970-12-21 1972-08-04 North American Rockwell
DE2316612A1 (de) * 1972-04-03 1973-10-18 Hitachi Ltd Ladungsuebertragungs-halbleitervorrichtungen
FR2186733A1 (xx) * 1972-05-30 1974-01-11 Ibm

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0376777A1 (fr) * 1988-12-30 1990-07-04 Thomson Composants Militaires Et Spatiaux Procédé de fabrication d'un dispositif à transfert de charges
FR2641416A1 (fr) * 1988-12-30 1990-07-06 Thomson Composants Militaires Procede de fabrication d'un dispositif a transfert de charges

Also Published As

Publication number Publication date
JPS5158079A (en) 1976-05-21
NL184591C (nl) 1989-09-01
NL184591B (nl) 1989-04-03
GB1524685A (en) 1978-09-13
AU8503775A (en) 1977-03-31
DE2541651C2 (de) 1983-10-06
CA1055159A (en) 1979-05-22
JPS5528227B2 (xx) 1980-07-26
DE2541651A1 (de) 1976-04-08
NL7412567A (nl) 1976-03-26
IT1042721B (it) 1980-01-30
SE401578B (sv) 1978-05-16
CH593561A5 (xx) 1977-12-15
AU497138B2 (en) 1978-11-30
SE7510593L (sv) 1976-03-25
FR2286506B1 (xx) 1979-05-11

Similar Documents

Publication Publication Date Title
FR2281293A1 (fr) Dispositif de transfert pour convoyeur
FR2310610A1 (fr) Dispositif de support de charges
BE832690A (fr) Dispositif contraceptif
FR2338877A1 (fr) Installation de transfert de charges
BE827330A (fr) Dispositif de levage
BE805775A (fr) Dispositif de transfert
FR2323211A1 (fr) Dispositif de transfert de charge
FR2286506A1 (fr) Dispositif de transfert de charges
BE803789A (fr) Dispositif a transfert de charge a regions diffusees
SE7710273L (sv) Laddningsoverforingsanordning
FR2281779A1 (fr) Dispositif separateur
FR2306812A1 (fr) Dispositif de transfert de paraisons
BE836002A (fr) Dispositif de manutention de charges
BE811761A (fr) Appareil a transfert de charges perfectionne
FR2283377A1 (fr) Dispositif de suspension
SE7505230L (sv) Laddningsforflyttningsanordning.
BE812370A (fr) Dispositif de transfert de charge
BE829152A (fr) Dispositif de transfert de charge
BE780640A (fr) Dispositif image a transfert de charge
BE789528A (fr) Dispositif de detection de charges emmagasinees
SE398950B (sv) Faksimilioverforingsanordning
FR2288373A1 (fr) Dispositif image a transfert de charges
IT1031592B (it) Dispositivo a trasferimento di cariche
BE774198A (fr) Dispositif de transfert de charges
FR2041108A1 (fr) Dispositif de manutention de charge

Legal Events

Date Code Title Description
ST Notification of lapse