JPS5528227B2 - - Google Patents

Info

Publication number
JPS5528227B2
JPS5528227B2 JP11440775A JP11440775A JPS5528227B2 JP S5528227 B2 JPS5528227 B2 JP S5528227B2 JP 11440775 A JP11440775 A JP 11440775A JP 11440775 A JP11440775 A JP 11440775A JP S5528227 B2 JPS5528227 B2 JP S5528227B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11440775A
Other languages
Japanese (ja)
Other versions
JPS5158079A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5158079A publication Critical patent/JPS5158079A/ja
Publication of JPS5528227B2 publication Critical patent/JPS5528227B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833Buried channel CCD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232Field-effect technology
    • H01L21/8234MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823406Combination of charge coupled devices, i.e. CCD, or BBD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025Channel region of field-effect devices
    • H01L29/1062Channel region of field-effect devices of charge coupled devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66946Charge transfer devices
    • H01L29/66954Charge transfer devices with an insulated gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP50114407A 1974-09-24 1975-09-23 Denkaisosochioyobi sonoseizohoho Granted JPS5158079A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7412567,A NL184591C (nl) 1974-09-24 1974-09-24 Ladingsoverdrachtinrichting.

Publications (2)

Publication Number Publication Date
JPS5158079A JPS5158079A (en) 1976-05-21
JPS5528227B2 true JPS5528227B2 (xx) 1980-07-26

Family

ID=19822150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50114407A Granted JPS5158079A (en) 1974-09-24 1975-09-23 Denkaisosochioyobi sonoseizohoho

Country Status (10)

Country Link
JP (1) JPS5158079A (xx)
AU (1) AU497138B2 (xx)
CA (1) CA1055159A (xx)
CH (1) CH593561A5 (xx)
DE (1) DE2541651C2 (xx)
FR (1) FR2286506A1 (xx)
GB (1) GB1524685A (xx)
IT (1) IT1042721B (xx)
NL (1) NL184591C (xx)
SE (1) SE401578B (xx)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760542A (en) * 1980-09-29 1982-04-12 Toshiba Corp Information recording medium
JPS57169938A (en) * 1981-04-10 1982-10-19 Sony Corp Optical type recording medium
JPS57172549A (en) * 1981-04-17 1982-10-23 C B S Sony Rekoode Kk Optical recording medium
JPS5814342A (ja) * 1981-07-16 1983-01-27 Sharp Corp 光記憶素子の製造方法
JPS591136U (ja) * 1982-06-25 1984-01-06 松下電器産業株式会社 光情報担体
JPS5974534U (ja) * 1982-11-10 1984-05-21 パイオニア株式会社 光学式デイスク
JPS59177032U (ja) * 1983-05-13 1984-11-27 日立コンデンサ株式会社 レ−ザ−デイスク
JPS6318252B2 (xx) * 1980-10-08 1988-04-18 Tokyo Shibaura Electric Co
JPH0222299Y2 (xx) * 1982-12-24 1990-06-15
JPH0338661B2 (xx) * 1980-07-23 1991-06-11 Sharp Kk

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8502478A (nl) * 1985-09-11 1987-04-01 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
FR2641416A1 (fr) * 1988-12-30 1990-07-06 Thomson Composants Militaires Procede de fabrication d'un dispositif a transfert de charges
CA2150330A1 (en) * 1994-05-27 1995-11-28 Andre Willem Visagie Shadow box or box frame unit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929579A (xx) * 1972-05-30 1974-03-16

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770988A (en) * 1970-09-04 1973-11-06 Gen Electric Self-registered surface charge launch-receive device and method for making
US3859717A (en) * 1970-12-21 1975-01-14 Rockwell International Corp Method of manufacturing control electrodes for charge coupled circuits and the like
NL165886C (nl) * 1972-04-03 1981-05-15 Hitachi Ltd Halfgeleiderinrichting van het ladingsgekoppelde type voor het opslaan en in volgorgde overdragen van pakketten meerderheidsladingdragers.
DE2314260A1 (de) * 1972-05-30 1973-12-13 Ibm Ladungsgekoppelte halbleiteranordnung und verfahren zu ihrer herstellung

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929579A (xx) * 1972-05-30 1974-03-16

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0338661B2 (xx) * 1980-07-23 1991-06-11 Sharp Kk
JPS5760542A (en) * 1980-09-29 1982-04-12 Toshiba Corp Information recording medium
JPS6318252B2 (xx) * 1980-10-08 1988-04-18 Tokyo Shibaura Electric Co
JPS57169938A (en) * 1981-04-10 1982-10-19 Sony Corp Optical type recording medium
JPS57172549A (en) * 1981-04-17 1982-10-23 C B S Sony Rekoode Kk Optical recording medium
JPS5814342A (ja) * 1981-07-16 1983-01-27 Sharp Corp 光記憶素子の製造方法
JPS591136U (ja) * 1982-06-25 1984-01-06 松下電器産業株式会社 光情報担体
JPS5974534U (ja) * 1982-11-10 1984-05-21 パイオニア株式会社 光学式デイスク
JPH0222299Y2 (xx) * 1982-12-24 1990-06-15
JPS59177032U (ja) * 1983-05-13 1984-11-27 日立コンデンサ株式会社 レ−ザ−デイスク

Also Published As

Publication number Publication date
JPS5158079A (en) 1976-05-21
NL184591C (nl) 1989-09-01
NL184591B (nl) 1989-04-03
GB1524685A (en) 1978-09-13
AU8503775A (en) 1977-03-31
DE2541651C2 (de) 1983-10-06
CA1055159A (en) 1979-05-22
FR2286506A1 (fr) 1976-04-23
DE2541651A1 (de) 1976-04-08
NL7412567A (nl) 1976-03-26
IT1042721B (it) 1980-01-30
SE401578B (sv) 1978-05-16
CH593561A5 (xx) 1977-12-15
AU497138B2 (en) 1978-11-30
SE7510593L (sv) 1976-03-25
FR2286506B1 (xx) 1979-05-11

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