JPS5528227B2 - - Google Patents
Info
- Publication number
- JPS5528227B2 JPS5528227B2 JP11440775A JP11440775A JPS5528227B2 JP S5528227 B2 JPS5528227 B2 JP S5528227B2 JP 11440775 A JP11440775 A JP 11440775A JP 11440775 A JP11440775 A JP 11440775A JP S5528227 B2 JPS5528227 B2 JP S5528227B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66946—Charge transfer devices
- H01L29/66954—Charge transfer devices with an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NLAANVRAGE7412567,A NL184591C (nl) | 1974-09-24 | 1974-09-24 | Ladingsoverdrachtinrichting. |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5158079A JPS5158079A (en) | 1976-05-21 |
JPS5528227B2 true JPS5528227B2 (xx) | 1980-07-26 |
Family
ID=19822150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50114407A Granted JPS5158079A (en) | 1974-09-24 | 1975-09-23 | Denkaisosochioyobi sonoseizohoho |
Country Status (10)
Country | Link |
---|---|
JP (1) | JPS5158079A (xx) |
AU (1) | AU497138B2 (xx) |
CA (1) | CA1055159A (xx) |
CH (1) | CH593561A5 (xx) |
DE (1) | DE2541651C2 (xx) |
FR (1) | FR2286506A1 (xx) |
GB (1) | GB1524685A (xx) |
IT (1) | IT1042721B (xx) |
NL (1) | NL184591C (xx) |
SE (1) | SE401578B (xx) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5760542A (en) * | 1980-09-29 | 1982-04-12 | Toshiba Corp | Information recording medium |
JPS57169938A (en) * | 1981-04-10 | 1982-10-19 | Sony Corp | Optical type recording medium |
JPS57172549A (en) * | 1981-04-17 | 1982-10-23 | C B S Sony Rekoode Kk | Optical recording medium |
JPS5814342A (ja) * | 1981-07-16 | 1983-01-27 | Sharp Corp | 光記憶素子の製造方法 |
JPS591136U (ja) * | 1982-06-25 | 1984-01-06 | 松下電器産業株式会社 | 光情報担体 |
JPS5974534U (ja) * | 1982-11-10 | 1984-05-21 | パイオニア株式会社 | 光学式デイスク |
JPS59177032U (ja) * | 1983-05-13 | 1984-11-27 | 日立コンデンサ株式会社 | レ−ザ−デイスク |
JPS6318252B2 (xx) * | 1980-10-08 | 1988-04-18 | Tokyo Shibaura Electric Co | |
JPH0222299Y2 (xx) * | 1982-12-24 | 1990-06-15 | ||
JPH0338661B2 (xx) * | 1980-07-23 | 1991-06-11 | Sharp Kk |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8502478A (nl) * | 1985-09-11 | 1987-04-01 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
FR2641416A1 (fr) * | 1988-12-30 | 1990-07-06 | Thomson Composants Militaires | Procede de fabrication d'un dispositif a transfert de charges |
CA2150330A1 (en) * | 1994-05-27 | 1995-11-28 | Andre Willem Visagie | Shadow box or box frame unit |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4929579A (xx) * | 1972-05-30 | 1974-03-16 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3770988A (en) * | 1970-09-04 | 1973-11-06 | Gen Electric | Self-registered surface charge launch-receive device and method for making |
US3859717A (en) * | 1970-12-21 | 1975-01-14 | Rockwell International Corp | Method of manufacturing control electrodes for charge coupled circuits and the like |
NL165886C (nl) * | 1972-04-03 | 1981-05-15 | Hitachi Ltd | Halfgeleiderinrichting van het ladingsgekoppelde type voor het opslaan en in volgorgde overdragen van pakketten meerderheidsladingdragers. |
DE2314260A1 (de) * | 1972-05-30 | 1973-12-13 | Ibm | Ladungsgekoppelte halbleiteranordnung und verfahren zu ihrer herstellung |
-
1974
- 1974-09-24 NL NLAANVRAGE7412567,A patent/NL184591C/xx not_active IP Right Cessation
-
1975
- 1975-09-18 DE DE2541651A patent/DE2541651C2/de not_active Expired
- 1975-09-19 CA CA235,924A patent/CA1055159A/en not_active Expired
- 1975-09-19 GB GB38587/75A patent/GB1524685A/en not_active Expired
- 1975-09-19 CH CH1217875A patent/CH593561A5/xx not_active IP Right Cessation
- 1975-09-19 IT IT27456/75A patent/IT1042721B/it active
- 1975-09-22 AU AU85037/75A patent/AU497138B2/en not_active Expired
- 1975-09-22 SE SE7510593A patent/SE401578B/xx unknown
- 1975-09-23 JP JP50114407A patent/JPS5158079A/ja active Granted
- 1975-09-23 FR FR7529102A patent/FR2286506A1/fr active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4929579A (xx) * | 1972-05-30 | 1974-03-16 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0338661B2 (xx) * | 1980-07-23 | 1991-06-11 | Sharp Kk | |
JPS5760542A (en) * | 1980-09-29 | 1982-04-12 | Toshiba Corp | Information recording medium |
JPS6318252B2 (xx) * | 1980-10-08 | 1988-04-18 | Tokyo Shibaura Electric Co | |
JPS57169938A (en) * | 1981-04-10 | 1982-10-19 | Sony Corp | Optical type recording medium |
JPS57172549A (en) * | 1981-04-17 | 1982-10-23 | C B S Sony Rekoode Kk | Optical recording medium |
JPS5814342A (ja) * | 1981-07-16 | 1983-01-27 | Sharp Corp | 光記憶素子の製造方法 |
JPS591136U (ja) * | 1982-06-25 | 1984-01-06 | 松下電器産業株式会社 | 光情報担体 |
JPS5974534U (ja) * | 1982-11-10 | 1984-05-21 | パイオニア株式会社 | 光学式デイスク |
JPH0222299Y2 (xx) * | 1982-12-24 | 1990-06-15 | ||
JPS59177032U (ja) * | 1983-05-13 | 1984-11-27 | 日立コンデンサ株式会社 | レ−ザ−デイスク |
Also Published As
Publication number | Publication date |
---|---|
JPS5158079A (en) | 1976-05-21 |
NL184591C (nl) | 1989-09-01 |
NL184591B (nl) | 1989-04-03 |
GB1524685A (en) | 1978-09-13 |
AU8503775A (en) | 1977-03-31 |
DE2541651C2 (de) | 1983-10-06 |
CA1055159A (en) | 1979-05-22 |
FR2286506A1 (fr) | 1976-04-23 |
DE2541651A1 (de) | 1976-04-08 |
NL7412567A (nl) | 1976-03-26 |
IT1042721B (it) | 1980-01-30 |
SE401578B (sv) | 1978-05-16 |
CH593561A5 (xx) | 1977-12-15 |
AU497138B2 (en) | 1978-11-30 |
SE7510593L (sv) | 1976-03-25 |
FR2286506B1 (xx) | 1979-05-11 |