CA1055159A - Charge transfer device manufacture - Google Patents

Charge transfer device manufacture

Info

Publication number
CA1055159A
CA1055159A CA235,924A CA235924A CA1055159A CA 1055159 A CA1055159 A CA 1055159A CA 235924 A CA235924 A CA 235924A CA 1055159 A CA1055159 A CA 1055159A
Authority
CA
Canada
Prior art keywords
layer
electrodes
sub
conductor layer
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA235,924A
Other languages
English (en)
French (fr)
Other versions
CA235924S (en
Inventor
Matthias J. J. Theunissen
Roelof P. Kramer
Hermanus L. Peek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA1055159A publication Critical patent/CA1055159A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/01—Manufacture or treatment
    • H10D44/041—Manufacture or treatment having insulated gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/335—Channel regions of field-effect devices of charge-coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CA235,924A 1974-09-24 1975-09-19 Charge transfer device manufacture Expired CA1055159A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7412567,A NL184591C (nl) 1974-09-24 1974-09-24 Ladingsoverdrachtinrichting.

Publications (1)

Publication Number Publication Date
CA1055159A true CA1055159A (en) 1979-05-22

Family

ID=19822150

Family Applications (1)

Application Number Title Priority Date Filing Date
CA235,924A Expired CA1055159A (en) 1974-09-24 1975-09-19 Charge transfer device manufacture

Country Status (10)

Country Link
JP (1) JPS5158079A (enrdf_load_stackoverflow)
AU (1) AU497138B2 (enrdf_load_stackoverflow)
CA (1) CA1055159A (enrdf_load_stackoverflow)
CH (1) CH593561A5 (enrdf_load_stackoverflow)
DE (1) DE2541651C2 (enrdf_load_stackoverflow)
FR (1) FR2286506A1 (enrdf_load_stackoverflow)
GB (1) GB1524685A (enrdf_load_stackoverflow)
IT (1) IT1042721B (enrdf_load_stackoverflow)
NL (1) NL184591C (enrdf_load_stackoverflow)
SE (1) SE401578B (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760542A (en) * 1980-09-29 1982-04-12 Toshiba Corp Information recording medium
JPS57169938A (en) * 1981-04-10 1982-10-19 Sony Corp Optical type recording medium
JPS57172549A (en) * 1981-04-17 1982-10-23 C B S Sony Rekoode Kk Optical recording medium
JPS5814342A (ja) * 1981-07-16 1983-01-27 Sharp Corp 光記憶素子の製造方法
JPS591136U (ja) * 1982-06-25 1984-01-06 松下電器産業株式会社 光情報担体
JPS5974534U (ja) * 1982-11-10 1984-05-21 パイオニア株式会社 光学式デイスク
JPS59177032U (ja) * 1983-05-13 1984-11-27 日立コンデンサ株式会社 レ−ザ−デイスク
NL8502478A (nl) * 1985-09-11 1987-04-01 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
FR2641416A1 (fr) * 1988-12-30 1990-07-06 Thomson Composants Militaires Procede de fabrication d'un dispositif a transfert de charges
CA2150330A1 (en) * 1994-05-27 1995-11-28 Andre Willem Visagie Shadow box or box frame unit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770988A (en) * 1970-09-04 1973-11-06 Gen Electric Self-registered surface charge launch-receive device and method for making
US3859717A (en) * 1970-12-21 1975-01-14 Rockwell International Corp Method of manufacturing control electrodes for charge coupled circuits and the like
US4032952A (en) * 1972-04-03 1977-06-28 Hitachi, Ltd. Bulk charge transfer semiconductor device
IT981505B (it) * 1972-05-30 1974-10-10 Ibm Dispositivo a semiconduttori a cariche accoppiate perfezionato
DE2314260A1 (de) * 1972-05-30 1973-12-13 Ibm Ladungsgekoppelte halbleiteranordnung und verfahren zu ihrer herstellung

Also Published As

Publication number Publication date
AU8503775A (en) 1977-03-31
AU497138B2 (en) 1978-11-30
FR2286506B1 (enrdf_load_stackoverflow) 1979-05-11
IT1042721B (it) 1980-01-30
GB1524685A (en) 1978-09-13
CH593561A5 (enrdf_load_stackoverflow) 1977-12-15
NL184591B (nl) 1989-04-03
DE2541651C2 (de) 1983-10-06
SE401578B (sv) 1978-05-16
FR2286506A1 (fr) 1976-04-23
JPS5158079A (en) 1976-05-21
NL7412567A (nl) 1976-03-26
DE2541651A1 (de) 1976-04-08
JPS5528227B2 (enrdf_load_stackoverflow) 1980-07-26
SE7510593L (sv) 1976-03-25
NL184591C (nl) 1989-09-01

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