JPS5158079A - Denkaisosochioyobi sonoseizohoho - Google Patents

Denkaisosochioyobi sonoseizohoho

Info

Publication number
JPS5158079A
JPS5158079A JP50114407A JP11440775A JPS5158079A JP S5158079 A JPS5158079 A JP S5158079A JP 50114407 A JP50114407 A JP 50114407A JP 11440775 A JP11440775 A JP 11440775A JP S5158079 A JPS5158079 A JP S5158079A
Authority
JP
Japan
Prior art keywords
denkaisosochioyobi
sonoseizohoho
denkaisosochioyobi sonoseizohoho
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50114407A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5528227B2 (enrdf_load_stackoverflow
Inventor
Yohanesu Yosefu Teu Matoshiasu
Piitaa Kuramaa Roerofu
Reonarudasu Piiku Herumanusu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS5158079A publication Critical patent/JPS5158079A/ja
Publication of JPS5528227B2 publication Critical patent/JPS5528227B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462Buried-channel CCD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/01Manufacture or treatment
    • H10D44/041Manufacture or treatment having insulated gates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213Channel regions of field-effect devices
    • H10D62/335Channel regions of field-effect devices of charge-coupled devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0198Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP50114407A 1974-09-24 1975-09-23 Denkaisosochioyobi sonoseizohoho Granted JPS5158079A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7412567,A NL184591C (nl) 1974-09-24 1974-09-24 Ladingsoverdrachtinrichting.

Publications (2)

Publication Number Publication Date
JPS5158079A true JPS5158079A (en) 1976-05-21
JPS5528227B2 JPS5528227B2 (enrdf_load_stackoverflow) 1980-07-26

Family

ID=19822150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50114407A Granted JPS5158079A (en) 1974-09-24 1975-09-23 Denkaisosochioyobi sonoseizohoho

Country Status (10)

Country Link
JP (1) JPS5158079A (enrdf_load_stackoverflow)
AU (1) AU497138B2 (enrdf_load_stackoverflow)
CA (1) CA1055159A (enrdf_load_stackoverflow)
CH (1) CH593561A5 (enrdf_load_stackoverflow)
DE (1) DE2541651C2 (enrdf_load_stackoverflow)
FR (1) FR2286506A1 (enrdf_load_stackoverflow)
GB (1) GB1524685A (enrdf_load_stackoverflow)
IT (1) IT1042721B (enrdf_load_stackoverflow)
NL (1) NL184591C (enrdf_load_stackoverflow)
SE (1) SE401578B (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760542A (en) * 1980-09-29 1982-04-12 Toshiba Corp Information recording medium
JPS57169938A (en) * 1981-04-10 1982-10-19 Sony Corp Optical type recording medium
JPS57172549A (en) * 1981-04-17 1982-10-23 C B S Sony Rekoode Kk Optical recording medium
JPS5814342A (ja) * 1981-07-16 1983-01-27 Sharp Corp 光記憶素子の製造方法
JPS591136U (ja) * 1982-06-25 1984-01-06 松下電器産業株式会社 光情報担体
JPS5974534U (ja) * 1982-11-10 1984-05-21 パイオニア株式会社 光学式デイスク
JPS59177032U (ja) * 1983-05-13 1984-11-27 日立コンデンサ株式会社 レ−ザ−デイスク
NL8502478A (nl) * 1985-09-11 1987-04-01 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
FR2641416A1 (fr) * 1988-12-30 1990-07-06 Thomson Composants Militaires Procede de fabrication d'un dispositif a transfert de charges
CA2150330A1 (en) * 1994-05-27 1995-11-28 Andre Willem Visagie Shadow box or box frame unit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929579A (enrdf_load_stackoverflow) * 1972-05-30 1974-03-16

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770988A (en) * 1970-09-04 1973-11-06 Gen Electric Self-registered surface charge launch-receive device and method for making
US3859717A (en) * 1970-12-21 1975-01-14 Rockwell International Corp Method of manufacturing control electrodes for charge coupled circuits and the like
US4032952A (en) * 1972-04-03 1977-06-28 Hitachi, Ltd. Bulk charge transfer semiconductor device
DE2314260A1 (de) * 1972-05-30 1973-12-13 Ibm Ladungsgekoppelte halbleiteranordnung und verfahren zu ihrer herstellung

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929579A (enrdf_load_stackoverflow) * 1972-05-30 1974-03-16

Also Published As

Publication number Publication date
AU8503775A (en) 1977-03-31
AU497138B2 (en) 1978-11-30
FR2286506B1 (enrdf_load_stackoverflow) 1979-05-11
IT1042721B (it) 1980-01-30
GB1524685A (en) 1978-09-13
CH593561A5 (enrdf_load_stackoverflow) 1977-12-15
NL184591B (nl) 1989-04-03
DE2541651C2 (de) 1983-10-06
SE401578B (sv) 1978-05-16
FR2286506A1 (fr) 1976-04-23
NL7412567A (nl) 1976-03-26
CA1055159A (en) 1979-05-22
DE2541651A1 (de) 1976-04-08
JPS5528227B2 (enrdf_load_stackoverflow) 1980-07-26
SE7510593L (sv) 1976-03-25
NL184591C (nl) 1989-09-01

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