GB1520925A - Semiconductor device manufacture - Google Patents

Semiconductor device manufacture

Info

Publication number
GB1520925A
GB1520925A GB40776/75A GB4077675A GB1520925A GB 1520925 A GB1520925 A GB 1520925A GB 40776/75 A GB40776/75 A GB 40776/75A GB 4077675 A GB4077675 A GB 4077675A GB 1520925 A GB1520925 A GB 1520925A
Authority
GB
United Kingdom
Prior art keywords
area
processing step
reference marker
layer
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB40776/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Components Ltd
Original Assignee
Mullard Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mullard Ltd filed Critical Mullard Ltd
Priority to GB40776/75A priority Critical patent/GB1520925A/en
Priority to CA261,849A priority patent/CA1066431A/en
Priority to DE19762642770 priority patent/DE2642770A1/de
Priority to US05/725,775 priority patent/US4125418A/en
Priority to NL7610947A priority patent/NL7610947A/xx
Priority to JP51119051A priority patent/JPS5259583A/ja
Priority to FR7630037A priority patent/FR2327641A1/fr
Publication of GB1520925A publication Critical patent/GB1520925A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2045—Electron beam lithography processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/101—Marks applied to devices, e.g. for alignment or identification characterised by the type of information, e.g. logos or symbols
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
    • H10W46/507—Located in dummy chips or in reference chips
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/102—Mask alignment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/975—Substrate or mask aligning feature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)
  • Electron Beam Exposure (AREA)
GB40776/75A 1975-10-06 1975-10-06 Semiconductor device manufacture Expired GB1520925A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GB40776/75A GB1520925A (en) 1975-10-06 1975-10-06 Semiconductor device manufacture
CA261,849A CA1066431A (en) 1975-10-06 1976-09-23 Semiconductor device manufacture
DE19762642770 DE2642770A1 (de) 1975-10-06 1976-09-23 Herstellung von halbleiteranordnungen
US05/725,775 US4125418A (en) 1975-10-06 1976-09-23 Utilization of a substrate alignment marker in epitaxial deposition processes
NL7610947A NL7610947A (nl) 1975-10-06 1976-10-04 Werkwijze ter vervaardiging van een halfge- leiderinrichting.
JP51119051A JPS5259583A (en) 1975-10-06 1976-10-05 Method of manufacturing semiconductor element
FR7630037A FR2327641A1 (fr) 1975-10-06 1976-10-06 Fabrication de dispositifs semi-conducteurs a l'aide d'un marqueur de reference

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB40776/75A GB1520925A (en) 1975-10-06 1975-10-06 Semiconductor device manufacture

Publications (1)

Publication Number Publication Date
GB1520925A true GB1520925A (en) 1978-08-09

Family

ID=10416557

Family Applications (1)

Application Number Title Priority Date Filing Date
GB40776/75A Expired GB1520925A (en) 1975-10-06 1975-10-06 Semiconductor device manufacture

Country Status (7)

Country Link
US (1) US4125418A (enExample)
JP (1) JPS5259583A (enExample)
CA (1) CA1066431A (enExample)
DE (1) DE2642770A1 (enExample)
FR (1) FR2327641A1 (enExample)
GB (1) GB1520925A (enExample)
NL (1) NL7610947A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2472213A1 (fr) * 1979-12-18 1981-06-26 Philips Nv Fabrication de circuit microminiature a l'etat solide et circuits ainsi obtenus

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1578259A (en) * 1977-05-11 1980-11-05 Philips Electronic Associated Methods of manufacturing solid-state devices apparatus for use therein and devices manufactured thereby
JPS5534442A (en) * 1978-08-31 1980-03-11 Fujitsu Ltd Preparation of semiconductor device
JPS5827663B2 (ja) * 1979-06-04 1983-06-10 富士通株式会社 半導体装置の製造方法
US4327292A (en) * 1980-05-13 1982-04-27 Hughes Aircraft Company Alignment process using serial detection of repetitively patterned alignment marks
US4431923A (en) * 1980-05-13 1984-02-14 Hughes Aircraft Company Alignment process using serial detection of repetitively patterned alignment marks
DE3123031A1 (de) * 1981-06-10 1983-01-05 Siemens AG, 1000 Berlin und 8000 München Verfahren zur kennzeichnung von halbleiterchips und kennzeichenbarer halbleiterchip
JPS5960306A (ja) * 1982-09-30 1984-04-06 Fujitsu Ltd 位置決定用チップを備えた試料
JPS59107511A (ja) * 1982-12-13 1984-06-21 Hitachi Ltd パタ−ン形成方法
DE3336901A1 (de) * 1983-10-11 1985-04-18 Deutsche Itt Industries Gmbh, 7800 Freiburg Maskenmarkierung und substratmarkierung fuer ein verfahren zum justieren einer eine maskenmarkierung enthaltenden photomaske auf einer substratmarkierung
US4487653A (en) * 1984-03-19 1984-12-11 Advanced Micro Devices, Inc. Process for forming and locating buried layers
EP0172583A3 (en) * 1984-08-24 1987-11-04 Nec Corporation Method of x-ray lithography
JPS61222137A (ja) * 1985-03-06 1986-10-02 Sharp Corp チップ識別用凹凸パターン形成方法
US4632724A (en) * 1985-08-19 1986-12-30 International Business Machines Corporation Visibility enhancement of first order alignment marks
US4936930A (en) * 1988-01-06 1990-06-26 Siliconix Incorporated Method for improved alignment for semiconductor devices with buried layers
US5385850A (en) * 1991-02-07 1995-01-31 International Business Machines Corporation Method of forming a doped region in a semiconductor substrate utilizing a sacrificial epitaxial silicon layer
US5451261A (en) * 1992-09-11 1995-09-19 Matsushita Electric Industrial Co., Ltd. Metal film deposition apparatus and metal film deposition method
US5401691A (en) * 1994-07-01 1995-03-28 Cypress Semiconductor Corporation Method of fabrication an inverse open frame alignment mark
JPH0927529A (ja) * 1995-07-12 1997-01-28 Sony Corp 位置合わせ検出用半導体装置
JP3528350B2 (ja) * 1995-08-25 2004-05-17 ソニー株式会社 半導体装置の製造方法
US5738961A (en) * 1997-03-03 1998-04-14 Taiwan Semiconductor Manufacturing Company, Ltd. Two-step photolithography method for aligning and patterning non-transparent layers

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1066911A (en) * 1965-01-01 1967-04-26 Standard Telephones Cables Ltd Semiconductor devices
FR1064185A (fr) * 1967-05-23 1954-05-11 Philips Nv Procédé de fabrication d'un système d'électrodes
FR1593881A (enExample) * 1967-12-12 1970-06-01
JPS4924553B1 (enExample) * 1968-12-09 1974-06-24
US3679497A (en) * 1969-10-24 1972-07-25 Westinghouse Electric Corp Electron beam fabrication system and process for use thereof
GB1328803A (en) * 1969-12-17 1973-09-05 Mullard Ltd Methods of manufacturing semiconductor devices
US3710101A (en) * 1970-10-06 1973-01-09 Westinghouse Electric Corp Apparatus and method for alignment of members to electron beams
US3879613A (en) * 1971-12-13 1975-04-22 Philips Corp Methods of manufacturing semiconductor devices
US3832561A (en) * 1973-10-01 1974-08-27 Westinghouse Electric Corp Method and apparatus for electron beam alignment with a substrate by schottky barrier contacts
US3895234A (en) * 1973-06-15 1975-07-15 Westinghouse Electric Corp Method and apparatus for electron beam alignment with a member

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2472213A1 (fr) * 1979-12-18 1981-06-26 Philips Nv Fabrication de circuit microminiature a l'etat solide et circuits ainsi obtenus
DE3046856A1 (de) * 1979-12-18 1981-09-03 Naamloze Vennootschap Philips' Gloeilampenfabrieken, Eindhoven Herstellung von mikrominiaturfeststoffanordnungen
US4377627A (en) * 1979-12-18 1983-03-22 U.S. Philips Corporation Microminiature solid state device manufacture with automatic alignment of sub-patterns

Also Published As

Publication number Publication date
DE2642770A1 (de) 1977-04-14
FR2327641B1 (enExample) 1982-10-15
JPS5259583A (en) 1977-05-17
NL7610947A (nl) 1977-04-12
CA1066431A (en) 1979-11-13
US4125418A (en) 1978-11-14
FR2327641A1 (fr) 1977-05-06

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee