GB1499389A - Monolithic semiconductor mask programmable rom and a method for manufacturing the same - Google Patents

Monolithic semiconductor mask programmable rom and a method for manufacturing the same

Info

Publication number
GB1499389A
GB1499389A GB39393/75A GB3939375A GB1499389A GB 1499389 A GB1499389 A GB 1499389A GB 39393/75 A GB39393/75 A GB 39393/75A GB 3939375 A GB3939375 A GB 3939375A GB 1499389 A GB1499389 A GB 1499389A
Authority
GB
United Kingdom
Prior art keywords
regions
igfets
substrate
semi
spaced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB39393/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB1499389A publication Critical patent/GB1499389A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
    • H10B20/36—Gate programmed, e.g. different gate material or no gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
    • H10B20/38—Doping programmed, e.g. mask ROM
    • H10B20/387—Source region or drain region doping programmed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
GB39393/75A 1974-09-26 1975-09-25 Monolithic semiconductor mask programmable rom and a method for manufacturing the same Expired GB1499389A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49110032A JPS605062B2 (ja) 1974-09-26 1974-09-26 半導体論理回路装置

Publications (1)

Publication Number Publication Date
GB1499389A true GB1499389A (en) 1978-02-01

Family

ID=14525370

Family Applications (1)

Application Number Title Priority Date Filing Date
GB39393/75A Expired GB1499389A (en) 1974-09-26 1975-09-25 Monolithic semiconductor mask programmable rom and a method for manufacturing the same

Country Status (4)

Country Link
JP (1) JPS605062B2 (enrdf_load_stackoverflow)
DE (1) DE2543138B2 (enrdf_load_stackoverflow)
FR (1) FR2286471A1 (enrdf_load_stackoverflow)
GB (1) GB1499389A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112687683A (zh) * 2019-10-17 2021-04-20 英飞凌科技股份有限公司 晶体管器件

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4061506A (en) * 1975-05-01 1977-12-06 Texas Instruments Incorporated Correcting doping defects
JPS54121685A (en) * 1978-03-14 1979-09-20 Kyushu Nippon Electric Ic and method of fabricating same
JPH0626246B2 (ja) * 1983-06-17 1994-04-06 株式会社日立製作所 半導体メモリの製造方法
JPS5910261A (ja) * 1983-06-24 1984-01-19 Toshiba Corp 半導体論理回路装置
JPS6149975U (enrdf_load_stackoverflow) * 1984-09-05 1986-04-03
FR2826169A1 (fr) 2001-06-15 2002-12-20 St Microelectronics Sa Memoire mos a lecture seulement

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112687683A (zh) * 2019-10-17 2021-04-20 英飞凌科技股份有限公司 晶体管器件

Also Published As

Publication number Publication date
JPS5137578A (enrdf_load_stackoverflow) 1976-03-29
DE2543138A1 (de) 1976-04-29
DE2543138B2 (de) 1978-05-11
DE2543138C3 (enrdf_load_stackoverflow) 1979-01-25
JPS605062B2 (ja) 1985-02-08
FR2286471B1 (enrdf_load_stackoverflow) 1981-10-30
FR2286471A1 (fr) 1976-04-23

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PE20 Patent expired after termination of 20 years

Effective date: 19950924