DE2543138B2 - Decoder, bestehend aus einem monolithischen, maskenprogrammierbaren Halbleiter-Festwertspeicher - Google Patents
Decoder, bestehend aus einem monolithischen, maskenprogrammierbaren Halbleiter-FestwertspeicherInfo
- Publication number
- DE2543138B2 DE2543138B2 DE2543138A DE2543138A DE2543138B2 DE 2543138 B2 DE2543138 B2 DE 2543138B2 DE 2543138 A DE2543138 A DE 2543138A DE 2543138 A DE2543138 A DE 2543138A DE 2543138 B2 DE2543138 B2 DE 2543138B2
- Authority
- DE
- Germany
- Prior art keywords
- source
- substrate
- regions
- memory
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015654 memory Effects 0.000 title claims description 63
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims description 46
- 238000009792 diffusion process Methods 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000011159 matrix material Substances 0.000 claims description 14
- 238000002347 injection Methods 0.000 claims description 10
- 239000007924 injection Substances 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims 7
- 238000005468 ion implantation Methods 0.000 claims 4
- 238000002513 implantation Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 230000000873 masking effect Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 229910052681 coesite Inorganic materials 0.000 description 7
- 229910052906 cristobalite Inorganic materials 0.000 description 7
- 229910052682 stishovite Inorganic materials 0.000 description 7
- 229910052905 tridymite Inorganic materials 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000004049 embossing Methods 0.000 description 3
- 101150110946 gatC gene Proteins 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- WYZJBFDJUPUJOF-UHFFFAOYSA-N Diain Natural products CC(C)CC1C2C(CC(=C)C3CC(O)C(O)(CCl)C3C2OC1=O)OC(=O)C(=C)CO WYZJBFDJUPUJOF-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 101150022753 galc gene Proteins 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/27—ROM only
- H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
- H10B20/36—Gate programmed, e.g. different gate material or no gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/27—ROM only
- H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
- H10B20/38—Doping programmed, e.g. mask ROM
- H10B20/387—Source region or drain region doping programmed
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49110032A JPS605062B2 (ja) | 1974-09-26 | 1974-09-26 | 半導体論理回路装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2543138A1 DE2543138A1 (de) | 1976-04-29 |
| DE2543138B2 true DE2543138B2 (de) | 1978-05-11 |
| DE2543138C3 DE2543138C3 (enrdf_load_stackoverflow) | 1979-01-25 |
Family
ID=14525370
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2543138A Granted DE2543138B2 (de) | 1974-09-26 | 1975-09-26 | Decoder, bestehend aus einem monolithischen, maskenprogrammierbaren Halbleiter-Festwertspeicher |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS605062B2 (enrdf_load_stackoverflow) |
| DE (1) | DE2543138B2 (enrdf_load_stackoverflow) |
| FR (1) | FR2286471A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1499389A (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4061506A (en) * | 1975-05-01 | 1977-12-06 | Texas Instruments Incorporated | Correcting doping defects |
| JPS54121685A (en) * | 1978-03-14 | 1979-09-20 | Kyushu Nippon Electric | Ic and method of fabricating same |
| JPH0626246B2 (ja) * | 1983-06-17 | 1994-04-06 | 株式会社日立製作所 | 半導体メモリの製造方法 |
| JPS5910261A (ja) * | 1983-06-24 | 1984-01-19 | Toshiba Corp | 半導体論理回路装置 |
| JPS6149975U (enrdf_load_stackoverflow) * | 1984-09-05 | 1986-04-03 | ||
| FR2826169A1 (fr) | 2001-06-15 | 2002-12-20 | St Microelectronics Sa | Memoire mos a lecture seulement |
| DE102019128071B3 (de) * | 2019-10-17 | 2021-02-04 | Infineon Technologies Ag | Transistorbauelement |
-
1974
- 1974-09-26 JP JP49110032A patent/JPS605062B2/ja not_active Expired
-
1975
- 1975-09-25 GB GB39393/75A patent/GB1499389A/en not_active Expired
- 1975-09-26 FR FR7529644A patent/FR2286471A1/fr active Granted
- 1975-09-26 DE DE2543138A patent/DE2543138B2/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5137578A (enrdf_load_stackoverflow) | 1976-03-29 |
| DE2543138A1 (de) | 1976-04-29 |
| DE2543138C3 (enrdf_load_stackoverflow) | 1979-01-25 |
| JPS605062B2 (ja) | 1985-02-08 |
| FR2286471B1 (enrdf_load_stackoverflow) | 1981-10-30 |
| FR2286471A1 (fr) | 1976-04-23 |
| GB1499389A (en) | 1978-02-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8328 | Change in the person/name/address of the agent |
Free format text: HENKEL, G., DR.PHIL. FEILER, L., DR.RER.NAT. HAENZEL, W., DIPL.-ING., PAT.-ANW., 8000 MUENCHEN |
|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP |