GB1493905A - Polishing semiconductor surfaces - Google Patents
Polishing semiconductor surfacesInfo
- Publication number
- GB1493905A GB1493905A GB31056/76A GB3105676A GB1493905A GB 1493905 A GB1493905 A GB 1493905A GB 31056/76 A GB31056/76 A GB 31056/76A GB 3105676 A GB3105676 A GB 3105676A GB 1493905 A GB1493905 A GB 1493905A
- Authority
- GB
- United Kingdom
- Prior art keywords
- polishing
- aqueous
- weight
- hydrogen peroxide
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005498 polishing Methods 0.000 title abstract 11
- 239000004065 semiconductor Substances 0.000 title abstract 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 abstract 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- 229910052788 barium Inorganic materials 0.000 abstract 3
- 229910052791 calcium Inorganic materials 0.000 abstract 3
- 239000011575 calcium Substances 0.000 abstract 3
- 239000003795 chemical substances by application Substances 0.000 abstract 3
- 229910052749 magnesium Inorganic materials 0.000 abstract 3
- 239000011777 magnesium Substances 0.000 abstract 3
- 239000010453 quartz Substances 0.000 abstract 3
- 239000000243 solution Substances 0.000 abstract 3
- 229910052725 zinc Inorganic materials 0.000 abstract 3
- 239000011701 zinc Substances 0.000 abstract 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 abstract 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 abstract 2
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 abstract 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 2
- 235000011114 ammonium hydroxide Nutrition 0.000 abstract 2
- 239000007864 aqueous solution Substances 0.000 abstract 2
- 239000007900 aqueous suspension Substances 0.000 abstract 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 abstract 2
- 229940104869 fluorosilicate Drugs 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 150000002739 metals Chemical class 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 229910052700 potassium Inorganic materials 0.000 abstract 2
- 150000004760 silicates Chemical class 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052708 sodium Inorganic materials 0.000 abstract 2
- 239000011734 sodium Substances 0.000 abstract 2
- 229910052712 strontium Inorganic materials 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 abstract 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 abstract 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 239000003513 alkali Substances 0.000 abstract 1
- 229910052790 beryllium Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- 229910052792 caesium Inorganic materials 0.000 abstract 1
- QHFQAJHNDKBRBO-UHFFFAOYSA-L calcium chloride hexahydrate Chemical compound O.O.O.O.O.O.[Cl-].[Cl-].[Ca+2] QHFQAJHNDKBRBO-UHFFFAOYSA-L 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 239000010941 cobalt Substances 0.000 abstract 1
- 229910017052 cobalt Inorganic materials 0.000 abstract 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 229910052730 francium Inorganic materials 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 239000000499 gel Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910001385 heavy metal Inorganic materials 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 229910052746 lanthanum Inorganic materials 0.000 abstract 1
- 239000011133 lead Substances 0.000 abstract 1
- 229910052744 lithium Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 235000006408 oxalic acid Nutrition 0.000 abstract 1
- 239000011591 potassium Substances 0.000 abstract 1
- 235000019353 potassium silicate Nutrition 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 229910052701 rubidium Inorganic materials 0.000 abstract 1
- 229910052706 scandium Inorganic materials 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 239000011669 selenium Substances 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 abstract 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 abstract 1
- 239000001117 sulphuric acid Substances 0.000 abstract 1
- 239000000725 suspension Substances 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052727 yttrium Inorganic materials 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19752538855 DE2538855A1 (de) | 1975-09-01 | 1975-09-01 | Verfahren zur herstellung von schleierfreien halbleiteroberflaechen, insbesondere schleierfreien oberflaechen von (111)-orientiertem galliumarsenid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1493905A true GB1493905A (en) | 1977-11-30 |
Family
ID=5955334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB31056/76A Expired GB1493905A (en) | 1975-09-01 | 1976-07-26 | Polishing semiconductor surfaces |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4064660A (enExample) |
| JP (1) | JPS5230159A (enExample) |
| DE (1) | DE2538855A1 (enExample) |
| FR (1) | FR2322456A1 (enExample) |
| GB (1) | GB1493905A (enExample) |
| NL (1) | NL7608325A (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4184908A (en) * | 1978-10-05 | 1980-01-22 | The United States Of America As Represented By The Secretary Of The Navy | Method for polishing cadmium sulfide semiconductors |
| JPS55113700A (en) * | 1979-02-19 | 1980-09-02 | Fujimi Kenmazai Kogyo Kk | Polishing method for gadolinium gallium garnet single crystal |
| US4663890A (en) * | 1982-05-18 | 1987-05-12 | Gmn Georg Muller Nurnberg Gmbh | Method for machining workpieces of brittle hard material into wafers |
| US4570071A (en) * | 1983-12-27 | 1986-02-11 | General Electric Company | Ionization detector |
| US4613314A (en) * | 1983-12-27 | 1986-09-23 | General Electric Company | Ionization detector |
| US4613313A (en) * | 1983-12-27 | 1986-09-23 | General Electric Company | Ionization detector |
| JPS60139336A (ja) * | 1983-12-27 | 1985-07-24 | Otsuka Chem Co Ltd | 飲料液の濾過方法 |
| DE3517665A1 (de) * | 1985-05-15 | 1986-11-20 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zum polieren von siliciumscheiben |
| DE3735158A1 (de) * | 1987-10-16 | 1989-05-03 | Wacker Chemitronic | Verfahren zum schleierfreien polieren von halbleiterscheiben |
| DE4311484A1 (de) * | 1992-04-09 | 1993-10-14 | Micron Technology Inc | Verfahren zur Bildung einer leitfähigen Struktur auf der Oberfläche eines Substrats |
| DE69306049T2 (de) * | 1992-06-19 | 1997-03-13 | Rikagaku Kenkyusho | Vorrichtung zum Schleifen von Spiegeloberfläche |
| JP3507628B2 (ja) * | 1996-08-06 | 2004-03-15 | 昭和電工株式会社 | 化学的機械研磨用研磨組成物 |
| JP4435391B2 (ja) * | 2000-08-04 | 2010-03-17 | 扶桑化学工業株式会社 | コロイド状シリカスラリー |
| US6756308B2 (en) * | 2001-02-13 | 2004-06-29 | Ekc Technology, Inc. | Chemical-mechanical planarization using ozone |
| US7601643B1 (en) * | 2001-08-30 | 2009-10-13 | Lsi Logic Corporation | Arrangement and method for fabricating a semiconductor wafer |
| US7485241B2 (en) * | 2003-09-11 | 2009-02-03 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition and method for using the same |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2997827A (en) * | 1958-07-30 | 1961-08-29 | Corning Glass Works | Precision grinding |
| US3429080A (en) * | 1966-05-02 | 1969-02-25 | Tizon Chem Corp | Composition for polishing crystalline silicon and germanium and process |
| US3527028A (en) * | 1967-09-26 | 1970-09-08 | Bell Telephone Labor Inc | Preparation of semiconductor surfaces |
| DE1752163A1 (de) * | 1968-04-11 | 1971-05-13 | Wacker Chemie Gmbh | Verfahren zum Polieren von Halbleiteroberflaechen |
| DE2247067C3 (de) * | 1972-09-26 | 1979-08-09 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Verwendung einer Poliersuspension zum schleierfreien Polieren von Halbleiteroberflächen |
| DE2305188A1 (de) * | 1973-02-02 | 1974-08-08 | Wacker Chemitronic | Verfahren zur herstellung von polierten halbleiteroberflaechen |
-
1975
- 1975-09-01 DE DE19752538855 patent/DE2538855A1/de not_active Withdrawn
-
1976
- 1976-07-26 GB GB31056/76A patent/GB1493905A/en not_active Expired
- 1976-07-27 NL NL7608325A patent/NL7608325A/xx not_active Application Discontinuation
- 1976-08-17 US US05/715,031 patent/US4064660A/en not_active Expired - Lifetime
- 1976-08-31 FR FR7626212A patent/FR2322456A1/fr active Granted
- 1976-09-01 JP JP51105410A patent/JPS5230159A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| NL7608325A (nl) | 1977-03-03 |
| DE2538855A1 (de) | 1977-03-10 |
| JPS5230159A (en) | 1977-03-07 |
| US4064660A (en) | 1977-12-27 |
| JPS5410824B2 (enExample) | 1979-05-10 |
| FR2322456A1 (fr) | 1977-03-25 |
| FR2322456B1 (enExample) | 1978-06-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |