JPS5410824B2 - - Google Patents
Info
- Publication number
- JPS5410824B2 JPS5410824B2 JP10541076A JP10541076A JPS5410824B2 JP S5410824 B2 JPS5410824 B2 JP S5410824B2 JP 10541076 A JP10541076 A JP 10541076A JP 10541076 A JP10541076 A JP 10541076A JP S5410824 B2 JPS5410824 B2 JP S5410824B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19752538855 DE2538855A1 (de) | 1975-09-01 | 1975-09-01 | Verfahren zur herstellung von schleierfreien halbleiteroberflaechen, insbesondere schleierfreien oberflaechen von (111)-orientiertem galliumarsenid |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5230159A JPS5230159A (en) | 1977-03-07 |
| JPS5410824B2 true JPS5410824B2 (enExample) | 1979-05-10 |
Family
ID=5955334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51105410A Granted JPS5230159A (en) | 1975-09-01 | 1976-09-01 | Method of making semiconductor surface without blur |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4064660A (enExample) |
| JP (1) | JPS5230159A (enExample) |
| DE (1) | DE2538855A1 (enExample) |
| FR (1) | FR2322456A1 (enExample) |
| GB (1) | GB1493905A (enExample) |
| NL (1) | NL7608325A (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4184908A (en) * | 1978-10-05 | 1980-01-22 | The United States Of America As Represented By The Secretary Of The Navy | Method for polishing cadmium sulfide semiconductors |
| JPS55113700A (en) * | 1979-02-19 | 1980-09-02 | Fujimi Kenmazai Kogyo Kk | Polishing method for gadolinium gallium garnet single crystal |
| US4663890A (en) * | 1982-05-18 | 1987-05-12 | Gmn Georg Muller Nurnberg Gmbh | Method for machining workpieces of brittle hard material into wafers |
| US4570071A (en) * | 1983-12-27 | 1986-02-11 | General Electric Company | Ionization detector |
| US4613314A (en) * | 1983-12-27 | 1986-09-23 | General Electric Company | Ionization detector |
| US4613313A (en) * | 1983-12-27 | 1986-09-23 | General Electric Company | Ionization detector |
| JPS60139336A (ja) * | 1983-12-27 | 1985-07-24 | Otsuka Chem Co Ltd | 飲料液の濾過方法 |
| DE3517665A1 (de) * | 1985-05-15 | 1986-11-20 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zum polieren von siliciumscheiben |
| DE3735158A1 (de) * | 1987-10-16 | 1989-05-03 | Wacker Chemitronic | Verfahren zum schleierfreien polieren von halbleiterscheiben |
| DE4311484A1 (de) * | 1992-04-09 | 1993-10-14 | Micron Technology Inc | Verfahren zur Bildung einer leitfähigen Struktur auf der Oberfläche eines Substrats |
| DE69306049T2 (de) * | 1992-06-19 | 1997-03-13 | Rikagaku Kenkyusho | Vorrichtung zum Schleifen von Spiegeloberfläche |
| JP3507628B2 (ja) * | 1996-08-06 | 2004-03-15 | 昭和電工株式会社 | 化学的機械研磨用研磨組成物 |
| JP4435391B2 (ja) * | 2000-08-04 | 2010-03-17 | 扶桑化学工業株式会社 | コロイド状シリカスラリー |
| US6756308B2 (en) * | 2001-02-13 | 2004-06-29 | Ekc Technology, Inc. | Chemical-mechanical planarization using ozone |
| US7601643B1 (en) * | 2001-08-30 | 2009-10-13 | Lsi Logic Corporation | Arrangement and method for fabricating a semiconductor wafer |
| US7485241B2 (en) * | 2003-09-11 | 2009-02-03 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition and method for using the same |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2997827A (en) * | 1958-07-30 | 1961-08-29 | Corning Glass Works | Precision grinding |
| US3429080A (en) * | 1966-05-02 | 1969-02-25 | Tizon Chem Corp | Composition for polishing crystalline silicon and germanium and process |
| US3527028A (en) * | 1967-09-26 | 1970-09-08 | Bell Telephone Labor Inc | Preparation of semiconductor surfaces |
| DE1752163A1 (de) * | 1968-04-11 | 1971-05-13 | Wacker Chemie Gmbh | Verfahren zum Polieren von Halbleiteroberflaechen |
| DE2247067C3 (de) * | 1972-09-26 | 1979-08-09 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Verwendung einer Poliersuspension zum schleierfreien Polieren von Halbleiteroberflächen |
| DE2305188A1 (de) * | 1973-02-02 | 1974-08-08 | Wacker Chemitronic | Verfahren zur herstellung von polierten halbleiteroberflaechen |
-
1975
- 1975-09-01 DE DE19752538855 patent/DE2538855A1/de not_active Withdrawn
-
1976
- 1976-07-26 GB GB31056/76A patent/GB1493905A/en not_active Expired
- 1976-07-27 NL NL7608325A patent/NL7608325A/xx not_active Application Discontinuation
- 1976-08-17 US US05/715,031 patent/US4064660A/en not_active Expired - Lifetime
- 1976-08-31 FR FR7626212A patent/FR2322456A1/fr active Granted
- 1976-09-01 JP JP51105410A patent/JPS5230159A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| NL7608325A (nl) | 1977-03-03 |
| DE2538855A1 (de) | 1977-03-10 |
| JPS5230159A (en) | 1977-03-07 |
| US4064660A (en) | 1977-12-27 |
| GB1493905A (en) | 1977-11-30 |
| FR2322456A1 (fr) | 1977-03-25 |
| FR2322456B1 (enExample) | 1978-06-30 |