JPS5230159A - Method of making semiconductor surface without blur - Google Patents

Method of making semiconductor surface without blur

Info

Publication number
JPS5230159A
JPS5230159A JP51105410A JP10541076A JPS5230159A JP S5230159 A JPS5230159 A JP S5230159A JP 51105410 A JP51105410 A JP 51105410A JP 10541076 A JP10541076 A JP 10541076A JP S5230159 A JPS5230159 A JP S5230159A
Authority
JP
Japan
Prior art keywords
blur
semiconductor surface
making semiconductor
making
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51105410A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5410824B2 (enExample
Inventor
Ramuperuto Ingorufu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of JPS5230159A publication Critical patent/JPS5230159A/ja
Publication of JPS5410824B2 publication Critical patent/JPS5410824B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Weting (AREA)
JP51105410A 1975-09-01 1976-09-01 Method of making semiconductor surface without blur Granted JPS5230159A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752538855 DE2538855A1 (de) 1975-09-01 1975-09-01 Verfahren zur herstellung von schleierfreien halbleiteroberflaechen, insbesondere schleierfreien oberflaechen von (111)-orientiertem galliumarsenid

Publications (2)

Publication Number Publication Date
JPS5230159A true JPS5230159A (en) 1977-03-07
JPS5410824B2 JPS5410824B2 (enExample) 1979-05-10

Family

ID=5955334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51105410A Granted JPS5230159A (en) 1975-09-01 1976-09-01 Method of making semiconductor surface without blur

Country Status (6)

Country Link
US (1) US4064660A (enExample)
JP (1) JPS5230159A (enExample)
DE (1) DE2538855A1 (enExample)
FR (1) FR2322456A1 (enExample)
GB (1) GB1493905A (enExample)
NL (1) NL7608325A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60139336A (ja) * 1983-12-27 1985-07-24 Otsuka Chem Co Ltd 飲料液の濾過方法
JPH07312366A (ja) * 1992-04-09 1995-11-28 Micron Technol Inc 化学的機械的平坦化

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4184908A (en) * 1978-10-05 1980-01-22 The United States Of America As Represented By The Secretary Of The Navy Method for polishing cadmium sulfide semiconductors
JPS55113700A (en) * 1979-02-19 1980-09-02 Fujimi Kenmazai Kogyo Kk Polishing method for gadolinium gallium garnet single crystal
US4663890A (en) * 1982-05-18 1987-05-12 Gmn Georg Muller Nurnberg Gmbh Method for machining workpieces of brittle hard material into wafers
US4570071A (en) * 1983-12-27 1986-02-11 General Electric Company Ionization detector
US4613314A (en) * 1983-12-27 1986-09-23 General Electric Company Ionization detector
US4613313A (en) * 1983-12-27 1986-09-23 General Electric Company Ionization detector
DE3517665A1 (de) * 1985-05-15 1986-11-20 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum polieren von siliciumscheiben
DE3735158A1 (de) * 1987-10-16 1989-05-03 Wacker Chemitronic Verfahren zum schleierfreien polieren von halbleiterscheiben
DE69306049T2 (de) * 1992-06-19 1997-03-13 Rikagaku Kenkyusho Vorrichtung zum Schleifen von Spiegeloberfläche
JP3507628B2 (ja) * 1996-08-06 2004-03-15 昭和電工株式会社 化学的機械研磨用研磨組成物
JP4435391B2 (ja) * 2000-08-04 2010-03-17 扶桑化学工業株式会社 コロイド状シリカスラリー
US6756308B2 (en) * 2001-02-13 2004-06-29 Ekc Technology, Inc. Chemical-mechanical planarization using ozone
US7601643B1 (en) * 2001-08-30 2009-10-13 Lsi Logic Corporation Arrangement and method for fabricating a semiconductor wafer
US7485241B2 (en) * 2003-09-11 2009-02-03 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4976470A (enExample) * 1972-09-26 1974-07-23
JPS49111580A (enExample) * 1973-02-02 1974-10-24

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2997827A (en) * 1958-07-30 1961-08-29 Corning Glass Works Precision grinding
US3429080A (en) * 1966-05-02 1969-02-25 Tizon Chem Corp Composition for polishing crystalline silicon and germanium and process
US3527028A (en) * 1967-09-26 1970-09-08 Bell Telephone Labor Inc Preparation of semiconductor surfaces
DE1752163A1 (de) * 1968-04-11 1971-05-13 Wacker Chemie Gmbh Verfahren zum Polieren von Halbleiteroberflaechen

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4976470A (enExample) * 1972-09-26 1974-07-23
JPS49111580A (enExample) * 1973-02-02 1974-10-24

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60139336A (ja) * 1983-12-27 1985-07-24 Otsuka Chem Co Ltd 飲料液の濾過方法
JPH07312366A (ja) * 1992-04-09 1995-11-28 Micron Technol Inc 化学的機械的平坦化

Also Published As

Publication number Publication date
NL7608325A (nl) 1977-03-03
DE2538855A1 (de) 1977-03-10
US4064660A (en) 1977-12-27
GB1493905A (en) 1977-11-30
JPS5410824B2 (enExample) 1979-05-10
FR2322456A1 (fr) 1977-03-25
FR2322456B1 (enExample) 1978-06-30

Similar Documents

Publication Publication Date Title
JPS51132972A (en) Method of etching
JPS523381A (en) Method of treating semiconductor element
JPS5236979A (en) Method of etching
JPS5224473A (en) Method of producing semiconductor element
BG27548A3 (en) Method of obtaining of carbonylsubstituated 1- sulphanylbenzimidazoles
JPS5255375A (en) Method of making semiconductor devices
JPS5230159A (en) Method of making semiconductor surface without blur
JPS5211859A (en) Method of making semiconductor having surface without film
JPS5239370A (en) Method of making semicondudctor devices
JPS529648A (en) Method of selectively ionnetching silicon
JPS5285463A (en) Improvement of semiconductor fabricating method
JPS51142974A (en) Method of making semiconductor element
JPS5280397A (en) Popymerization method of epsilonncaprolactam
JPS5275173A (en) Method of making semiconductor devices
JPS5236529A (en) Method of surface treatment
JPS5275174A (en) Method of making semiconductor devices
JPS527922A (en) Method of manufacturing nnacetyl llmethionin
JPS5253816A (en) Method of manufacturing alphaaaminoo gammaamercaptobutyloonitrile
JPS5260068A (en) Method of making semiconductor devices
JPS51129176A (en) Method of making semiconductor device
GB1518743A (en) Method of soldering
JPS5415668A (en) Method of producing semiconductor
JPS5248624A (en) Method of manufacturing dicyanobutene
JPS5250570A (en) Method of producing circuit substrate
JPS51147962A (en) Method of mounting semiconductor devices