GB1449702A - Polishing semi-conductor surfaces - Google Patents

Polishing semi-conductor surfaces

Info

Publication number
GB1449702A
GB1449702A GB512274A GB512274A GB1449702A GB 1449702 A GB1449702 A GB 1449702A GB 512274 A GB512274 A GB 512274A GB 512274 A GB512274 A GB 512274A GB 1449702 A GB1449702 A GB 1449702A
Authority
GB
United Kingdom
Prior art keywords
amine
wheel
suspension
polishing
calcium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB512274A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of GB1449702A publication Critical patent/GB1449702A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Abstract

1449702 Polishing WACKER-CHEMITRONIC GES FUR ELEKTRONIKGRUNDSTOFFE mbH 4 Feb 1974 [2 Feb 1973] 5122/74 Heading B3D [Also in Division C4] A semi-conductor material, is polished using an agent consisting of a suspension comprising one or more of quartz, a silica, salicie acid, a silicate and a fluosilicate and additionally comprising an amine. The amine may be a primary, secondary, or tertiary amine and the term includes ammonia. Numerous suitable examples are specified. They may be present as the salts and the amounts of amine are preferably 0À3 to 2% by weight. Suitable solvents are also specified. Suitable silicates are those of zirconium, iron, lead, nickel, cobalt, magnesium, calcium, strontium, barium, zinc and aluminium and preferred fluosilicates are those of sodium, potassium, magnesium, calcium, barium, aluminium and zinc. Silica gels and sols may be present. The suspension is generally in water but other solvents may also be used. In an example silicon discs were bedded with wax on to a plate of stainless steel and plaeed on the wheel of a polishing machine. The wheel was rotated at 130 r.p.m. under a pressure of 0À2 kgf./cm<SP>2</SP>. while a polishing suspension of 50 litres of waterglass, 25 kg. calcium chloride hexahydrate and 0À89% by weight ethylenediamine in 100 litres of water was dripped on to the wheel at about 30 ml./min. for one hour.
GB512274A 1973-02-02 1974-02-04 Polishing semi-conductor surfaces Expired GB1449702A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732305188 DE2305188A1 (en) 1973-02-02 1973-02-02 PROCESS FOR THE PRODUCTION OF POLISHED SEMI-CONDUCTOR SURFACES

Publications (1)

Publication Number Publication Date
GB1449702A true GB1449702A (en) 1976-09-15

Family

ID=5870787

Family Applications (1)

Application Number Title Priority Date Filing Date
GB512274A Expired GB1449702A (en) 1973-02-02 1974-02-04 Polishing semi-conductor surfaces

Country Status (6)

Country Link
JP (1) JPS49111580A (en)
DE (1) DE2305188A1 (en)
FR (1) FR2216077B1 (en)
GB (1) GB1449702A (en)
IT (1) IT1002811B (en)
NL (1) NL7401454A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4692223A (en) * 1985-05-15 1987-09-08 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for polishing silicon wafers
WO2000000560A2 (en) * 1998-06-26 2000-01-06 Cabot Microelectronics Corporation Chemical mechanical polishing slurry and method for using same

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2538855A1 (en) * 1975-09-01 1977-03-10 Wacker Chemitronic PROCESS FOR THE PRODUCTION OF VEIL-FREE SEMICONDUCTOR SURFACES, IN PARTICULAR VEIL-FREE SURFACES OF (111) -ORIENTED GALLIUM ARSENIDE
JPS5531582A (en) * 1978-08-15 1980-03-05 Ibm Free polishing device
JPS6287242A (en) * 1985-05-29 1987-04-21 Nippon Shokubai Kagaku Kogyo Co Ltd Stable metal oxide sol composition
DE3545383A1 (en) * 1985-12-20 1987-07-02 Wacker Chemitronic Process for diffusing hydrogen into semiconductor wafers, especially silicon wafers
JPS62162462A (en) * 1986-01-10 1987-07-18 Rohm Co Ltd Finishing of wafer surface
JP2651144B2 (en) * 1987-01-26 1997-09-10 キヤノン株式会社 Manufacturing method of crystal substrate
JPH01153262A (en) * 1987-12-10 1989-06-15 Mitsubishi Metal Corp Mirror finishing method
US5226930A (en) * 1988-06-03 1993-07-13 Monsanto Japan, Ltd. Method for preventing agglomeration of colloidal silica and silicon wafer polishing composition using the same
JPH0236067A (en) * 1988-07-25 1990-02-06 Toshiba Corp Method and device for polishing
JPH02146732A (en) * 1988-07-28 1990-06-05 Fujitsu Ltd Abrasive liquid and abrasion
NL8802028A (en) * 1988-08-16 1990-03-16 Philips Nv METHOD FOR MANUFACTURING AN APPARATUS
US5084071A (en) * 1989-03-07 1992-01-28 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
EP2555229A4 (en) 2010-03-29 2017-02-01 Asahi Glass Company, Limited Polishing agent, polishing method and method for manufacturing semiconductor integrated circuit device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3385682A (en) * 1965-04-29 1968-05-28 Sprague Electric Co Method and reagent for surface polishing

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4692223A (en) * 1985-05-15 1987-09-08 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for polishing silicon wafers
WO2000000560A2 (en) * 1998-06-26 2000-01-06 Cabot Microelectronics Corporation Chemical mechanical polishing slurry and method for using same
WO2000000560A3 (en) * 1998-06-26 2001-12-13 Cabot Microelectronics Corp Chemical mechanical polishing slurry and method for using same
US6533832B2 (en) 1998-06-26 2003-03-18 Cabot Microelectronics Corporation Chemical mechanical polishing slurry and method for using same

Also Published As

Publication number Publication date
NL7401454A (en) 1974-08-06
FR2216077B1 (en) 1976-04-30
IT1002811B (en) 1976-05-20
DE2305188A1 (en) 1974-08-08
JPS49111580A (en) 1974-10-24
FR2216077A1 (en) 1974-08-30

Similar Documents

Publication Publication Date Title
GB1449702A (en) Polishing semi-conductor surfaces
GB1418088A (en) Polishing semi-conductor surfaces
ES487399A1 (en) Silica gel
GB974643A (en) A process for the production of molecular sieve granules
GB1284087A (en) Preparation of silica gels
ES476488A1 (en) Manufacture of zeolite A crystals of uniformly small particle size.
AU6349280A (en) Synthesising zinco, stanno or titano silicates
GB1364658A (en) Nickel silica comosition with high nickel surface area
GB1343790A (en) Adhesive composition
GB1493905A (en) Polishing semiconductor surfaces
ES8608216A1 (en) Process for encapsulating slurries in cement.
SE306798B (en)
ES489504A1 (en) Process for producing a boron containing zeolite with the structure of ZSM-5 and its use as a catalyst.
GB970958A (en) Improved pigments
GB1375291A (en)
GB1491211A (en) Process for inhibiting the swelling of aluminium toothpaste tubes
GB1234894A (en) Process for polishing the surface of semiconductor materials
GB1524738A (en) Gypsum plaster
ES536882A0 (en) A PROCEDURE FOR PREPARING AN ALUMINUM SODIUM SILICATE DETERGENT POWDER AND SODIUM SILICATE.
GB1382340A (en) Production of precipitated silica
GB1337752A (en) Zeolite
GB1499902A (en) Mixtures containing optical brighteners and a process for the production of such mixtures
EP0180934A3 (en) Process for the manufacture of coarse granules of layered silicates, and their use as adsorbents for proteins
ES425419A1 (en) Abrasive boron nitride particles containing phosphorus
GB997202A (en) Calcium silicate product and method of preparing same

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee