GB1480129A - Method of obtaining high temperature resistant assemblies comprising isolated silicon islands bonded to a substrate - Google Patents
Method of obtaining high temperature resistant assemblies comprising isolated silicon islands bonded to a substrateInfo
- Publication number
- GB1480129A GB1480129A GB7689/75A GB768975A GB1480129A GB 1480129 A GB1480129 A GB 1480129A GB 7689/75 A GB7689/75 A GB 7689/75A GB 768975 A GB768975 A GB 768975A GB 1480129 A GB1480129 A GB 1480129A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- silicon
- high temperature
- wafer
- islands
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 7
- 229910052710 silicon Inorganic materials 0.000 title abstract 7
- 239000010703 silicon Substances 0.000 title abstract 7
- 239000000758 substrate Substances 0.000 title abstract 5
- 230000000712 assembly Effects 0.000 title 1
- 238000000429 assembly Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 238000003486 chemical etching Methods 0.000 abstract 1
- 238000000866 electrolytic etching Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000005360 phosphosilicate glass Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Recrystallisation Techniques (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7406492A FR2262406B1 (en, 2012) | 1974-02-26 | 1974-02-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1480129A true GB1480129A (en) | 1977-07-20 |
Family
ID=9135457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB7689/75A Expired GB1480129A (en) | 1974-02-26 | 1975-02-24 | Method of obtaining high temperature resistant assemblies comprising isolated silicon islands bonded to a substrate |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS50126181A (en, 2012) |
| BE (1) | BE825855A (en, 2012) |
| DE (1) | DE2508091A1 (en, 2012) |
| FR (1) | FR2262406B1 (en, 2012) |
| GB (1) | GB1480129A (en, 2012) |
| IT (1) | IT1030218B (en, 2012) |
| NL (1) | NL7502154A (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112938894A (zh) * | 2021-03-11 | 2021-06-11 | 中北大学 | 一种多层次立体化的mems器件抗冲击防护结构的制备方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5086011A (en) * | 1987-01-27 | 1992-02-04 | Advanced Micro Devices, Inc. | Process for producing thin single crystal silicon islands on insulator |
-
1974
- 1974-02-26 FR FR7406492A patent/FR2262406B1/fr not_active Expired
-
1975
- 1975-02-22 JP JP50022357A patent/JPS50126181A/ja active Pending
- 1975-02-24 BE BE1006473A patent/BE825855A/xx not_active IP Right Cessation
- 1975-02-24 GB GB7689/75A patent/GB1480129A/en not_active Expired
- 1975-02-24 NL NL7502154A patent/NL7502154A/xx not_active Application Discontinuation
- 1975-02-25 IT IT67482/75A patent/IT1030218B/it active
- 1975-02-25 DE DE19752508091 patent/DE2508091A1/de active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112938894A (zh) * | 2021-03-11 | 2021-06-11 | 中北大学 | 一种多层次立体化的mems器件抗冲击防护结构的制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1030218B (it) | 1979-03-30 |
| FR2262406B1 (en, 2012) | 1982-02-19 |
| DE2508091A1 (de) | 1975-08-28 |
| NL7502154A (nl) | 1975-08-28 |
| BE825855A (fr) | 1975-08-25 |
| FR2262406A1 (en, 2012) | 1975-09-19 |
| JPS50126181A (en, 2012) | 1975-10-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |