GB1275004A - Improvements in the manufacture of semiconductor elements - Google Patents
Improvements in the manufacture of semiconductor elementsInfo
- Publication number
- GB1275004A GB1275004A GB41584/70A GB4158470A GB1275004A GB 1275004 A GB1275004 A GB 1275004A GB 41584/70 A GB41584/70 A GB 41584/70A GB 4158470 A GB4158470 A GB 4158470A GB 1275004 A GB1275004 A GB 1275004A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon
- layer
- monocrystalline
- polycrystalline
- units
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- 229910052787 antimony Inorganic materials 0.000 abstract 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 239000003870 refractory metal Substances 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000011856 silicon-based particle Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Dicing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
1275004 Making semi-conductor devices HITACHI Ltd 28 Aug 1970 [1 Sept 1969] 41584/70 Heading H1K The manufacture of individual semi-conductor units each containing one or more circuit elements can be appreciated from the two figures one of which shows the structure inverted with respect to the other. In the embodiment a monocrystalline silicon wafer 1 has a latticeform area 2 provided thereon (for example by the provision and etching of a layer of silicon particles, silicon oxide, silicon, nitride, or glass) such that in the subsequent overall deposition of silicon from a silane atmosphere monocrystalline zones 3 are formed which are separated from one another by a polycrystalline zone 4 formed over the area 2. The deposited silicon is of high resistivity and doped with arsenic or antimony. Low resistivity regions 5 are formed in the monocrystalline zones 3 by arsenic or antimony diffusion. The surface of the deposited silicon is covered with a layer 6 of silicon oxide, ceramic, or refractory metal. Parts of the layer 6 may be removed to allow heavy diffusion of boron into the polycrystalline zone 4. A handling layer 7 of polycrystalline silicon is then provided and the original, monocrystalline substrate 1 etched or lapped away. Base and emitter regions 8, 9 are formed by diffusion through a silicon oxide or silicon nitride layer 10 and beam leads 11, 12 formed from gold, chromium, molybdenum, or tungsten. The readily etched polycrystalline silicon of layer 7 and zone 4 is then etched away to separate the units, the layer 6 acting as an etch stop resulting in planar lower surfaces for the units.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6866569A JPS4914381B1 (en) | 1969-09-01 | 1969-09-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1275004A true GB1275004A (en) | 1972-05-24 |
Family
ID=13380217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB41584/70A Expired GB1275004A (en) | 1969-09-01 | 1970-08-28 | Improvements in the manufacture of semiconductor elements |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS4914381B1 (en) |
| DE (1) | DE2043332A1 (en) |
| FR (1) | FR2060339A1 (en) |
| GB (1) | GB1275004A (en) |
| NL (1) | NL7012844A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3962052A (en) * | 1975-04-14 | 1976-06-08 | International Business Machines Corporation | Process for forming apertures in silicon bodies |
| GB1602498A (en) * | 1978-05-31 | 1981-11-11 | Secr Defence | Fet devices and their fabrication |
-
1969
- 1969-09-01 JP JP6866569A patent/JPS4914381B1/ja active Pending
-
1970
- 1970-08-28 GB GB41584/70A patent/GB1275004A/en not_active Expired
- 1970-08-31 NL NL7012844A patent/NL7012844A/xx unknown
- 1970-08-31 FR FR7031631A patent/FR2060339A1/en not_active Withdrawn
- 1970-09-01 DE DE19702043332 patent/DE2043332A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4914381B1 (en) | 1974-04-06 |
| NL7012844A (en) | 1971-03-03 |
| FR2060339A1 (en) | 1971-06-18 |
| DE2043332A1 (en) | 1971-03-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |