GB1475656A - Method of etching materials containing silicon - Google Patents

Method of etching materials containing silicon

Info

Publication number
GB1475656A
GB1475656A GB2047575A GB2047575A GB1475656A GB 1475656 A GB1475656 A GB 1475656A GB 2047575 A GB2047575 A GB 2047575A GB 2047575 A GB2047575 A GB 2047575A GB 1475656 A GB1475656 A GB 1475656A
Authority
GB
United Kingdom
Prior art keywords
silicon
etched
mask
layer
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2047575A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1475656A publication Critical patent/GB1475656A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Surface Treatment Of Glass (AREA)
  • Weting (AREA)
GB2047575A 1974-05-28 1975-05-15 Method of etching materials containing silicon Expired GB1475656A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742425684 DE2425684A1 (de) 1974-05-28 1974-05-28 Verfahren zum aetzen von silicium enthaltenden materialien

Publications (1)

Publication Number Publication Date
GB1475656A true GB1475656A (en) 1977-06-01

Family

ID=5916629

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2047575A Expired GB1475656A (en) 1974-05-28 1975-05-15 Method of etching materials containing silicon

Country Status (5)

Country Link
US (1) US3971683A (https=)
JP (1) JPS50153795A (https=)
DE (1) DE2425684A1 (https=)
FR (1) FR2273081B1 (https=)
GB (1) GB1475656A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004051738A3 (en) * 2002-12-03 2004-09-02 Koninkl Philips Electronics Nv Method for the manufacture of a display

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5339349A (en) * 1976-09-24 1978-04-11 Asahi Glass Co Ltd Thermosetting resin molding material
JPS5370688A (en) * 1976-12-06 1978-06-23 Toshiba Corp Production of semoconductor device
US4283248A (en) * 1979-02-01 1981-08-11 Nitto Electric Industrial Co., Ltd. Etching solution for tin-nickel alloy and process for etching the same
US4465550A (en) * 1982-06-16 1984-08-14 General Signal Corporation Method and apparatus for slicing semiconductor ingots
US4713145A (en) * 1986-12-19 1987-12-15 Gulton Industries, Inc. Method of etching etch-resistant materials
DE4414925A1 (de) * 1994-04-28 1995-11-02 Wacker Chemitronic Verfahren zur Behandlung von Halbleitermaterial mit einer säurehaltigen Flüssigkeit
US6117351A (en) * 1998-04-06 2000-09-12 Micron Technology, Inc. Method for etching dielectric films
US6286685B1 (en) * 1999-03-15 2001-09-11 Seh America, Inc. System and method for wafer thickness sorting
US20040226506A1 (en) * 2003-05-14 2004-11-18 Lynn David Mark Coated wafer processing equipment
JP4746413B2 (ja) * 2005-11-28 2011-08-10 大王製紙株式会社 体液吸収性物品
DE102007054484B3 (de) * 2007-11-15 2009-03-12 Deutsche Cell Gmbh Strukturier-Verfahren
JP6433730B2 (ja) * 2014-09-08 2018-12-05 東芝メモリ株式会社 半導体装置の製造方法及び半導体製造装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3715249A (en) * 1971-09-03 1973-02-06 Bell Telephone Labor Inc Etching si3n4
GB1423448A (en) * 1973-07-18 1976-02-04 Plessey Co Ltd Method of selectively etching silicon nitride

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004051738A3 (en) * 2002-12-03 2004-09-02 Koninkl Philips Electronics Nv Method for the manufacture of a display

Also Published As

Publication number Publication date
FR2273081A1 (https=) 1975-12-26
US3971683A (en) 1976-07-27
FR2273081B1 (https=) 1977-07-22
DE2425684A1 (de) 1975-12-11
JPS50153795A (https=) 1975-12-11

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee