FR2273081B1 - - Google Patents

Info

Publication number
FR2273081B1
FR2273081B1 FR7513743A FR7513743A FR2273081B1 FR 2273081 B1 FR2273081 B1 FR 2273081B1 FR 7513743 A FR7513743 A FR 7513743A FR 7513743 A FR7513743 A FR 7513743A FR 2273081 B1 FR2273081 B1 FR 2273081B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7513743A
Other versions
FR2273081A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2273081A1 publication Critical patent/FR2273081A1/fr
Application granted granted Critical
Publication of FR2273081B1 publication Critical patent/FR2273081B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/043Dual dielectric
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Weting (AREA)
  • Surface Treatment Of Glass (AREA)
  • Silicon Compounds (AREA)
FR7513743A 1974-05-28 1975-04-24 Expired FR2273081B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742425684 DE2425684A1 (de) 1974-05-28 1974-05-28 Verfahren zum aetzen von silicium enthaltenden materialien

Publications (2)

Publication Number Publication Date
FR2273081A1 FR2273081A1 (fr) 1975-12-26
FR2273081B1 true FR2273081B1 (fr) 1977-07-22

Family

ID=5916629

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7513743A Expired FR2273081B1 (fr) 1974-05-28 1975-04-24

Country Status (5)

Country Link
US (1) US3971683A (fr)
JP (1) JPS50153795A (fr)
DE (1) DE2425684A1 (fr)
FR (1) FR2273081B1 (fr)
GB (1) GB1475656A (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5339349A (en) * 1976-09-24 1978-04-11 Asahi Glass Co Ltd Thermosetting resin molding material
JPS5370688A (en) * 1976-12-06 1978-06-23 Toshiba Corp Production of semoconductor device
US4283248A (en) * 1979-02-01 1981-08-11 Nitto Electric Industrial Co., Ltd. Etching solution for tin-nickel alloy and process for etching the same
US4465550A (en) * 1982-06-16 1984-08-14 General Signal Corporation Method and apparatus for slicing semiconductor ingots
US4713145A (en) * 1986-12-19 1987-12-15 Gulton Industries, Inc. Method of etching etch-resistant materials
DE4414925A1 (de) * 1994-04-28 1995-11-02 Wacker Chemitronic Verfahren zur Behandlung von Halbleitermaterial mit einer säurehaltigen Flüssigkeit
US6117351A (en) * 1998-04-06 2000-09-12 Micron Technology, Inc. Method for etching dielectric films
US6286685B1 (en) * 1999-03-15 2001-09-11 Seh America, Inc. System and method for wafer thickness sorting
AU2003274577A1 (en) * 2002-12-03 2004-06-23 Koninklijke Philips Electronics N.V. Method for the manufacture of a display
US20040226506A1 (en) * 2003-05-14 2004-11-18 Lynn David Mark Coated wafer processing equipment
JP4746413B2 (ja) * 2005-11-28 2011-08-10 大王製紙株式会社 体液吸収性物品
DE102007054484B3 (de) 2007-11-15 2009-03-12 Deutsche Cell Gmbh Strukturier-Verfahren
JP6433730B2 (ja) * 2014-09-08 2018-12-05 東芝メモリ株式会社 半導体装置の製造方法及び半導体製造装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3715249A (en) * 1971-09-03 1973-02-06 Bell Telephone Labor Inc Etching si3n4
GB1423448A (en) * 1973-07-18 1976-02-04 Plessey Co Ltd Method of selectively etching silicon nitride

Also Published As

Publication number Publication date
GB1475656A (en) 1977-06-01
US3971683A (en) 1976-07-27
FR2273081A1 (fr) 1975-12-26
DE2425684A1 (de) 1975-12-11
JPS50153795A (fr) 1975-12-11

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Legal Events

Date Code Title Description
ST Notification of lapse