GB1458327A - Method of treating a layer of silicon dioxide - Google Patents

Method of treating a layer of silicon dioxide

Info

Publication number
GB1458327A
GB1458327A GB2060575A GB2060575A GB1458327A GB 1458327 A GB1458327 A GB 1458327A GB 2060575 A GB2060575 A GB 2060575A GB 2060575 A GB2060575 A GB 2060575A GB 1458327 A GB1458327 A GB 1458327A
Authority
GB
United Kingdom
Prior art keywords
layer
solute
dried
solution
treating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2060575A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1458327A publication Critical patent/GB1458327A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/0134—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/20—Diffusion for doping of insulating layers

Landscapes

  • Formation Of Insulating Films (AREA)
  • Inorganic Insulating Materials (AREA)
GB2060575A 1974-06-06 1975-05-15 Method of treating a layer of silicon dioxide Expired GB1458327A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05476837 USB476837I5 (enExample) 1974-06-06 1974-06-06

Publications (1)

Publication Number Publication Date
GB1458327A true GB1458327A (en) 1976-12-15

Family

ID=23893457

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2060575A Expired GB1458327A (en) 1974-06-06 1975-05-15 Method of treating a layer of silicon dioxide

Country Status (5)

Country Link
US (1) USB476837I5 (enExample)
JP (1) JPS516475A (enExample)
DE (1) DE2524750C3 (enExample)
FR (1) FR2274141A1 (enExample)
GB (1) GB1458327A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826051A (ja) * 1981-08-06 1983-02-16 Asahi Glass Co Ltd アルカリ拡散防止酸化ケイ素膜の形成されたガラス体
DE3208087A1 (de) * 1982-03-06 1983-09-15 Deutsche Forschungs- und Versuchsanstalt für Luft- und Raumfahrt e.V., 5300 Bonn Verfahren zur passivierung von halbleitern
JPS61164266A (ja) * 1985-01-16 1986-07-24 Nec Corp 耐放射線性の強化された半導体装置
DE69311184T2 (de) * 1992-03-27 1997-09-18 Matsushita Electric Ind Co Ltd Halbleitervorrichtung samt Herstellungsverfahren

Also Published As

Publication number Publication date
DE2524750A1 (de) 1975-12-18
DE2524750C3 (de) 1979-02-22
JPS516475A (en) 1976-01-20
FR2274141A1 (fr) 1976-01-02
USB476837I5 (enExample) 1976-01-20
DE2524750B2 (de) 1978-06-15
JPS5340872B2 (enExample) 1978-10-30

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee