JPS6482557A - Manufacture of capacitor - Google Patents

Manufacture of capacitor

Info

Publication number
JPS6482557A
JPS6482557A JP62239152A JP23915287A JPS6482557A JP S6482557 A JPS6482557 A JP S6482557A JP 62239152 A JP62239152 A JP 62239152A JP 23915287 A JP23915287 A JP 23915287A JP S6482557 A JPS6482557 A JP S6482557A
Authority
JP
Japan
Prior art keywords
film
dielectric
capacitor
ta2o5
metal oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62239152A
Other languages
Japanese (ja)
Inventor
Kyoichi Suguro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62239152A priority Critical patent/JPS6482557A/en
Publication of JPS6482557A publication Critical patent/JPS6482557A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To substantially decrease leakage current of a metal oxide having high permittivity to be used as a dielectric and to obtain a capacitor suitable for a VLSI chip or the Iike, by doping the metal oxide film with an element having polling electronegativity higher than a particular value. CONSTITUTION:Fluorine ions having poling electronegativity of 2 or more are implanted into an Ta2O5 film 6 having high pemittivity used as a dielectric. The film is then thermally treated within atmosphere of O2 so that lattice defect is annealed and chemical coupling of the implanted atoms is accelerated. Subsequently, an Al film is formed on the Ta2O5 film 6 to provide an upper electrode 7 which constitutes a capacitor 8 together with a lower electrode 4 and the dielectric Ta2O5 film 6 having high permittivity. In this manner, it is possible to obtain a capacitor suitable for mounting on a VLSI chip or the like, having a small area, large capacity and low current leakage properties.
JP62239152A 1987-09-25 1987-09-25 Manufacture of capacitor Pending JPS6482557A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62239152A JPS6482557A (en) 1987-09-25 1987-09-25 Manufacture of capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62239152A JPS6482557A (en) 1987-09-25 1987-09-25 Manufacture of capacitor

Publications (1)

Publication Number Publication Date
JPS6482557A true JPS6482557A (en) 1989-03-28

Family

ID=17040525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62239152A Pending JPS6482557A (en) 1987-09-25 1987-09-25 Manufacture of capacitor

Country Status (1)

Country Link
JP (1) JPS6482557A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5498561A (en) * 1990-11-30 1996-03-12 Nec Corporation Method of fabricating memory cell for semiconductor integrated circuit
US6521930B2 (en) 2000-06-07 2003-02-18 Nec Corporation Semiconductor device having Ta2O5 thin film
US7335570B1 (en) 1990-07-24 2008-02-26 Semiconductor Energy Laboratory Co., Ltd. Method of forming insulating films, capacitances, and semiconductor devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7335570B1 (en) 1990-07-24 2008-02-26 Semiconductor Energy Laboratory Co., Ltd. Method of forming insulating films, capacitances, and semiconductor devices
US5498561A (en) * 1990-11-30 1996-03-12 Nec Corporation Method of fabricating memory cell for semiconductor integrated circuit
US6521930B2 (en) 2000-06-07 2003-02-18 Nec Corporation Semiconductor device having Ta2O5 thin film

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