JPS6482557A - Manufacture of capacitor - Google Patents
Manufacture of capacitorInfo
- Publication number
- JPS6482557A JPS6482557A JP62239152A JP23915287A JPS6482557A JP S6482557 A JPS6482557 A JP S6482557A JP 62239152 A JP62239152 A JP 62239152A JP 23915287 A JP23915287 A JP 23915287A JP S6482557 A JPS6482557 A JP S6482557A
- Authority
- JP
- Japan
- Prior art keywords
- film
- dielectric
- capacitor
- ta2o5
- metal oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To substantially decrease leakage current of a metal oxide having high permittivity to be used as a dielectric and to obtain a capacitor suitable for a VLSI chip or the Iike, by doping the metal oxide film with an element having polling electronegativity higher than a particular value. CONSTITUTION:Fluorine ions having poling electronegativity of 2 or more are implanted into an Ta2O5 film 6 having high pemittivity used as a dielectric. The film is then thermally treated within atmosphere of O2 so that lattice defect is annealed and chemical coupling of the implanted atoms is accelerated. Subsequently, an Al film is formed on the Ta2O5 film 6 to provide an upper electrode 7 which constitutes a capacitor 8 together with a lower electrode 4 and the dielectric Ta2O5 film 6 having high permittivity. In this manner, it is possible to obtain a capacitor suitable for mounting on a VLSI chip or the like, having a small area, large capacity and low current leakage properties.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62239152A JPS6482557A (en) | 1987-09-25 | 1987-09-25 | Manufacture of capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62239152A JPS6482557A (en) | 1987-09-25 | 1987-09-25 | Manufacture of capacitor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6482557A true JPS6482557A (en) | 1989-03-28 |
Family
ID=17040525
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62239152A Pending JPS6482557A (en) | 1987-09-25 | 1987-09-25 | Manufacture of capacitor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6482557A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5498561A (en) * | 1990-11-30 | 1996-03-12 | Nec Corporation | Method of fabricating memory cell for semiconductor integrated circuit |
US6521930B2 (en) | 2000-06-07 | 2003-02-18 | Nec Corporation | Semiconductor device having Ta2O5 thin film |
US7335570B1 (en) | 1990-07-24 | 2008-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming insulating films, capacitances, and semiconductor devices |
-
1987
- 1987-09-25 JP JP62239152A patent/JPS6482557A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7335570B1 (en) | 1990-07-24 | 2008-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming insulating films, capacitances, and semiconductor devices |
US5498561A (en) * | 1990-11-30 | 1996-03-12 | Nec Corporation | Method of fabricating memory cell for semiconductor integrated circuit |
US6521930B2 (en) | 2000-06-07 | 2003-02-18 | Nec Corporation | Semiconductor device having Ta2O5 thin film |
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